• Korean Journal of Materials Research
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• v.15 no.6
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• Journal of the Korea Computer Industry Society
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• v.3 no.2
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• pp.149-158
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• 2002

This paper deals with design and verification of an arithmetic logic unit(ALU) to be used for development of optical computers. The ALU is based on optical switching device, $LiNbO_3$, which is easy to interface with electronic technology and most common in the market. It consists of an arithmetic/logic circuit performing logic operations, memory devices storing operands and the results of operations, and supplementary circuits to select instruction codes, and operates in bit-serial manner. In addition, a simulator is developed for verification of the design, and a set of basic instructions are executed in sequence and step-by-step changes in the accumulator and the memory are examined through simulations, to show that various operations are performed correctly.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1235-1239
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• 1997

Sodium niobate single crystals were grown by high temperature solution growth with Na2O/B2O3 flux. The phase transitions and domain structures of sodium niobate were observed using transmission polarizing microscope from room temperature to $650^{\circ}C$. There was imperfect extinction region within as-grown crystals and this area could be removed by heat treatment. The area existed within crystal till 3$65^{\circ}C$, in which temperature the space group of sodium niobate is changed from Pbma to Pmnm. The phase transition from Pbma to Pmnm happened abruptly with changing domain structure. At 48$0^{\circ}C$, 52$0^{\circ}C$ and 572$^{\circ}C$, the colors and walls of domains were changed. All domains disappeared and the space group of sodium niobate was changed from P4/mbm to Pm3m at 64$0^{\circ}C$. When sodium niobate changed from high temperature phase to low temperature phase, the memory effect of domain structure was not observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.251-251
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• 2007

A new type of a lead-free positive temperature coefficient of resistivity(PTCR) material. based on $(Bi_{1/2}Na_{1/2})TiO_3\;-\;BaTiO_3$ solid solution ceramics has been developed. The effect of $Nb_O_5$ and $Y_2O_3$ content on the electrical properties and the microstructure of (1-x) $(Bi_{1/2}Na_{1/2})TiO_3\;-\;x\;BaTiO_3$ (BNBT) ceramics made using a conventional mixed oxide process has been studied. The Curie Temperature was obviously increased with the increasing of $(B_{0.5}Na_{0.5})TiO_3$ content. The Y-doped BNBT ceramics(x=0.02) display low resistivity values of $10^2-10^3$ ohm*cm at room temperature and the Curie Temperature of $Tc=155^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.152-156
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• 2017

In this paper, $Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ ceramics were fabricated by the conventional solid state method to obtain excellent dielectric properties for ultrasonic generators. The effects of 2nd calcination temperature on their microstructure and piezoelectric properties were systematically investigated. The tetragonality increased in the ceramics when 2nd calcination temperature increased to the optimized temperature at $750^{\circ}C$. At that temperature, excellent physical properties ($d_{33}=352\;pC/N$, ${\varepsilon}_r=1,687$, $k_p=0.570$, $Q_m=1,640$) were obtained for ultrasonic generator application.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.236-237
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• 2001

최근 빠른 정보산업의 발달로 대용량의 정보를 초고속으로 전달해야 할 필요성으로 인해 광전송 시스템의 개발이 활발히 진행되고 있다. 특히 광통신 시스템이나 주변의 계측장비들과의 결합이 쉽다는 잇점 때문에 모드록킹된 광섬유 레이저는 이 분야의 광원으로서 매우 중요하게 쓰이고 있으며, 연구가 많이 진행되고 있다. 본 실험에 사용된 광섬유 레이저는 파장 1.55 $mu extrm{m}$대역에서 이득을 얻을 수 있는 어븀(Er$^{3+}$ )이 첨가된 광섬유를 사용하여 4.5 MHz의 빠른 반복률로 모드록킹 되도록 제작된 (Newgrid, (FFL-1550-PML-0) 것이며 펄스 폭은 320 fs, 중심파장은 1.566 $\mu\textrm{m}$, 펄스의 첨두 출력은 6.3 kW이다. (중략)

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.3
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• pp.544-547
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_{2}O_{9}$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The optimum conditions of RF power and Ar/$O_2$ ratio were 60[W] and 70/30, respectively. Deposition rate of SBN thin films was about 4.17[nm/min]. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}400[^{\circ}C]$, the surface rougness showed about 4.33[nm]. The capacitance of SBN thin films were increased with the increase of deposition temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.671-676
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1195-1199
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• 2003

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT[0.91Pb(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$0.03/(Zr$\sub$0.495/Ti$\sub$0.505/)$\sub$0.97/O$_3$-0.04Pb(Ni$\sub$1/2/W$\sub$1/2/)O$_3$+0.05BiFeO$_3$+0.3wt％MnO$_2$+0.6wt％CuO〕 ceramics were investigated according to Zr/Ti ratio. As Zr/Ti ratio is increased, electromechanical coupling factor(k$\sub$p/) and dielectric constant increased and then decreased after the ratio of Zr/Ti=50/50. Also, mechanical qualify factor(Q$\sub$m/) decreased and then increased after the ratio of Zr/Ti=50/50.