• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.33.1-35
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• 2000

Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase $Na_{0.5}/K_{0.5}NbO_3$(NKN) thin film have been grown on $LaA1O_3$substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\varphi$ scan data evidence highly c-axis oriented along the [001] direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.33-35
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• 2000

Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na$_{0.5}$K$_{0.5}$NbO$_3$ (NKN) thin film have been grown on LaA1O$_3$ substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\phi$ scan data evidence highly c-axis oriented along the [001] direction.ion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.269-273
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• 2001

W fabricated thin film using Na$_{0.5}$K$_{0.5}$NbO$_3$ volatile material by pulsed laser deposition (PLD) and studied characterization from EM, XRD, P-E. The density and scale of droplet, which is the defect of PLD, was investigated by SEM but large droplet was not found. The degree of assemble oriented C-axis measured with X-ray diffraction suggests that this film oriented C-axis achieved by $\theta$-2$\theta$ scan and rocking curves shows good self-assemble phenomenon, finally $\phi$-scan does that all of the four directions of the lattice in film equals to those of substrate. P-E hysteresis loop shows residual remnant polarization or saturation polarization value, but it is applicable to memories.ies.

• Journal of Surface Science and Engineering
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• v.41 no.6
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• pp.269-273
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• 2008

The etch of $(Na_{0.5}K_{0.5})NbO_3$ (NKN) thin film was performed in $BCl_3/Cl_2/Ar$ inductively coupled plasma. It was found that the 1sccm addition $BCl_3$ (5%) into $Cl_2/Ar$ plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at $BCl_3$ (1 sccm)/$Cl_2$ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra of XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.489-493
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• 2004

[ $Ba_2NaNb_5O_{15}$ ]은 orthorhombic tungsten bronze 결정구조를 갖는 강유전체로서, 단결정의 경우 $LiNbO_3$에 비해 우수한 비선형 전광계수 값을 나타내는 것으로 알려져 있으며, 또한 주목할만한 초전, 압전, 강유전특성을 나타내고 있다. 본 연구에서는 다른 강유전체박막에 비하여 상대적으로 연구가 덜 이루어진 BNN 박막을 세라믹 타겟을 사용하여 이온빔 보조 증착법을 사용하여 제조하였으며, $Ar/O_2$ 분위기에서 증착된 BNN 박막에 대한 결정화 및 배향 특성을 고찰하였고, 이에 따른 전기적 특성의 변화를 살펴보았다. 연구에 사용된 기판은 $Pt(100)/TiO_2/SiO_2/Si(100)$이었으며, 이온빔 보조 증착법에서 보조 이온빔의 에너지를 $0{\sim}400eV$로 변화 시키며 BNN 박막을 증착한 후, 열처리하였다. BNN 박막의 전기적 특성은 MFM 박막 커패시터의 형태로 제조하여 강유전 특성에 대해 살펴보았다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1394-1395
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• 2006

$(Na_{0.5}LaK_{0.5})NbO_3$ (NKN) thin films were fabricated by the alkoxide-based MOD method. NKN stock solutions were made spin-coated onto the Pt/Ti/$SiO_2$/Si substrate. The structural properties of the NKN thin films examined by x-ray diffraction. The perovskite phase was obtained as a function of the annealing temperature from $550^{\circ}C$ to $700^{\circ}C$ for 1h. The crystallinity and grain size of the NKN thin films increased with increasing annealing temperature. The dielectric constants and loss of the NKN thin films annealed at $650^{\circ}C$ ($t_{eq}$=2.35 nm) showed 323 and 0.025.