• Title/Summary/Keyword: $N_2O/O_2$

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Studies on Structure and Optical Characteristics of TiO-N Thin Film Manufactured by DC Reactive Magnetron Sputtering Method (DC 마그네트론 반응성 스퍼터링법에 의해서 제작된 TiO-N 박막의 구조 및 광학적특성에 관한 연구)

  • Park Jang Sick;Park Sang Won;Kim Tae Woo;Kim Sung Kuk;Ahn Won Sool
    • Journal of the Korean institute of surface engineering
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    • v.37 no.6
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    • pp.307-312
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    • 2004
  • Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

Spectroscopic, Thermal and Biological Studies on Newly Synthesized Cu(II), Ni(II) and Co(II) Complexes with 3-N-2-hydroxyethylamine Benzanthrone and 3-N-2-aminoethylamine Benzanthrone (3-N-2-hydroxyethylamine benzanthrone 및 3-N-2-aminoethylamine benzanthrone에 대한 Cu(II), Ni(II) 및 Co(II) 착물의 분광학, 열 및 생물학적 연구)

  • Refat, Moamen S.;Megahed, Adel S.;El-Deen, Ibrahim M.;Grabchev, Ivo;El-Ghol, Samir
    • Journal of the Korean Chemical Society
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    • v.55 no.1
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    • pp.28-37
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    • 2011
  • Spectroscopic (infrared, electronic and $1^H$-NMR), elemental analyses CHN, molar conductivity, thermogravimetric analyses (TGA/DTG) and biological studies, of both benzanthrone derivatives 3-N-2-hydroxy ethylamine benzanthrone (HEAB) and 3-N-2-amino ethylamine benzanthrone (AEAB) with Cu(II), Co(II) and Ni(II) chlorides were discussed herein. Based on the above studies, HEAB ligand was suggested to be coordinated to each metal ions via hydroxo and amino groups to form [Cu(HEAB)$(Cl)_2$].$2H_2O$, [Co(HEAB)$(Cl)_2(H_2O)_2$].$8H_2O$ and [Ni(HEAB)$(Cl)_2(H_2O)_2$].$7H_2O$ coordinated complex. On the other hand, AEAB has an octahedral coordinated feature with formulas [Cu(AEAB)$(Cl)_2(H_2O)_2$].$2H_2O$, [Co(AEAB)$(Cl)_2(H_2O)_2$].$4H_2O$ and [Ni(AEAB)$(Cl)_2(H_2O)_2$]. $6H_2O$. The molar conductance values at $25{\circ}C$ for all complexes in DMF are slightly higher than free ligands; this supported the presence of chloride ions inside the coordination sphere. Both benzanthrone ligands and their complexes have been screened against different kinds of bacteria.

대기압 플라즈마 표면 처리를 이용한 금속과 폴리이미드 필름의 접촉력 향상에 관한 연구

  • O, Jong-Sik;Park, Jae-Beom;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.264-264
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    • 2011
  • Poly [(N, N'-oxydiphenylene) pyromellitimide], polyimide (PI) film은 기계적 강도가 매우 우수하고 열적, 화학적 안정성이 뛰어난 재료로서 전자제품의 소형화, 경령화, 고성능화를 위한 차세대 flexible electronic device에 적용하기 위하여 많은 연구가 진행되고 있다. 그러나 PI의 특성상, 매우 낮은 표면에너지로 인해 금속과의 접촉력이 좋지 않은 단점을 가지고 있다. 본 연구에서는, 금속박막과 PI film 과의 접촉력을 증가시키기 위해 remote-type modified dielectric barrier discharge (DBD) module을 이용하여 대기압 플라즈마 표면처리를 하였다. 실험에 사용된 gas composition은 각각 $N_2$/ He/ $SF_6$, $N_2$/ He/ $O_2$, $N_2$/ He/ $SF_6$/ $O_2$, $N_2$/ He/ $SF_6$/ $O_2$ 이다. $N_2$/ He/ $SF_6$/ $O_2$ gas composition을 이용하여 PI 표면을 플라즈마 처리한 경우, C=O 결합이 PI film 위에 생성됨으로써, 접촉각이 매우 낮게 형성됨을 관찰할 수 있었다. 이와는 반대로 $N_2$/ He/ $SF_6$ gas composition 을 사용하였을 경우에는 C-Fx 화학적 결합이 생성되기 때문에 가장 높은 접촉각이 형성됨을 관찰할 수 있었다. 특히, $N_2$ (40 slm)/ He (1 slm)/ $SF_6$ (1.2 slm) gas composition에 $O_2$ gas를 0.2 slm부터 1.0 slm까지 변화시켜가며 PI film 표면을 처리한 결과, $O_2$ gas를 0.9 slm 첨가하였을 때, 가장 낮은 $9.3^{\circ}$의 접촉각을 얻을 수 있었다. 이는 0.9 slm의 $O_2$ gas를 첨가하였을 때, 가장 많은 양의 $O_2$ radical이 생성되기 때문에 많은 양의 C=O 결합이 생성되기 때문이다. 최적화된 $N_2$ (40 slm)/ He (1 slm)/ $SF_6$ (1.2 slm)/ $O_2$ (0.9 slm) gas composition 조건에서 Ag film과 PI film과의 접촉력을 관찰할 결과, 111 gf/mm를 얻을 수 있었다.

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Atmospheric CO2 enrichment reduces wheat nitrate utilization and enhances soil N2O emissions

  • Hu, Shuijin
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2017.06a
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    • pp.4-4
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    • 2017
  • Atmospheric carbon dioxide enrichment ($eCO_2$) often increases soil nitrous oxide ($N_2O$) emissions, but the underlying mechanisms are not fully understood. Emerging evidence suggests that $eCO_2$ alters plant N preference in favor of ammonium ($NH_4{^+}-N$) over nitrate ($NO_3{^-}-N$). Yet, whether and how this attributes to the enhancement of $N_2O$ emissions has not been investigated. We examined the effects of $eCO_2$ on soil $N_2O$ emissions in the presence of two N forms ($NH_4{^+}-N$ or $NO_3{^-}-N$), using wheat (Triticum aestivum L.) as a model plant. Our results showed that N forms dominated $eCO_2$ effects on plant and microbial N utilization, and thus soil $N_2O$ emissions. Elevated $CO_2$ significantly increased the rate and the sum of $N_2O$ emissions by three to four folds when $NO_3{^-}-N$, but not $NH_4{^+}-N$, was supplied. Enhanced $N_2O$ emission was related to the reduced plant $NO_3{^-}-N$ uptake in wheat. We propose a new conceptual model in which $eCO_2$-inhibition of plant $NO_3{^-}-N$ uptake and/or $CO_2$-enhancement of soil labile C enhances the N and/or C availability for denitrifiers and increases the intensity and/or the duration of $N_2O$ emissions. Together, these findings suggest that to enhance plant N use efficiency and reduce $N_2O$ emission, crop breeding and management need to consider altered plant preference of N sources under future $CO_2$ scenarios.

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Characteristics of Oxynitride Dielectics Prepared in $N_2O$ Ambient by Furnace (Furnace로 $N_2O$ 분위기에서 성장시킨 Oxynitride 절연막 특성)

  • 이은구;박인길;박진성
    • Journal of the Korean Ceramic Society
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    • v.32 no.1
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    • pp.31-36
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    • 1995
  • (100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

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Study of the Effect of $N_2$ Gas in Etched ZnO Thin Films in $Cl_2$/Ar Plasma ($N_2$ 가스를 첨가한 $Cl_2$/Ar 플라즈마에 의해 식각된 ZnO 박막의 식각 특성)

  • Heo, Gyeong-Mu;Park, Jeong-Su;Ju, Yeong-Hui;Woo, Jong-Chang;Kim, Chang-Il
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.10a
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    • pp.223-224
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    • 2009
  • 본 연구에서는 $Cl_2$/Ar 기반의 플라즈마 식각에 $N_2$가스를 첨가하여 ZnO 박막을 식각 하였을 때 관찰된 ZnO 박막의 식각 특성에 관하여 연구 하였다. ZnO 박막 식각 실험은 RF 800 W, bias power 400 W, 공정 압력 15 mTorr를 기준으로 하였으며 가스 혼합 비율로는 최적의 식각률을 보여주는 $Cl_2$/Ar=8:2 비율에서 실행하였다. 연구의 목적인 첨가 가스 $N_2$$Cl_2$ (80%)/Ar (20)%에 5 sccm 씩 첨가하여 20 sccm 까지 증가 시켜 실험 하였다. $N_2$ 가스가 15 sccm 첨가되었을 때 식각률 95.9 nm/min로 기존 $Cl_2$/Ar 기반의 플라즈마 식각보다 높은 식각률을 보여 주었으며 $N_2$ 가스 흐름 조절 외에도 공정 압력, RF power, bias power를 변경하며 실험하였다. 식각된 ZnO 박막의 표면은 최대 식각률을 보이는 공정 조건을 찾기 위해 surface profiler ($\alpha$-step)을 이용하여 식각률을 측정하였으며 ZnO 박막 표면의 화학적인 변화를 조사하기 위해 x-ray photoelectron spectroscopy (XPS)를 사용하였다. XPS 분석 결과 Zn $2p_{3/2}$ peak 가낮은 binding energy 쪽으로 이동한 것을 관찰 할 수 있었다. 또한 O 1s 의 스펙트럼을 분석한 결과 N-O bond와 O-H bond가 존재함이 밝혀졌다.

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Electrochemical Properties and Crystal Structure of $Li_{1+x}Mn_2O_4$($0\leqx\leq0.075$) Synthesized at Solid State Method (고상법에 의한 $Li_{1+x}Mn_2O_4$ ($0\leqx\leq0.075$) 의 결정구조와 전기화학적 특성)

  • 박종광;고건문;임성훈;황종선;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.5
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    • pp.383-390
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    • 2001
  • We have investigated the L $i_{1+x}$M $n_2$ $O_4$system as a cathode material for lithium rechargeable batteries. To improve the cycle performance of spinel LiM $n_2$ $O_4$ as the cathode of 4V class lithium secondary batteries, spinel phase L $i_{1+x}$M $n_2$ $O_4$(x=0, 0.025, 0.05, 0.075) was prepared at 75$0^{\circ}C$ for 48h. The preparation of L $i_{1+x}$M $n_2$ $O_4$ from L $i_2$ $O_3$ and Mn $O_2$ under air is studied. The compounds were synthesized by using solid-state reaction. Structural refinements were carried out with a Rietveld-refinement program. Electrochemical properties were examined using the Li/L $i_{1+x}$M $n_2$ $O_4$ cells. The capacity of L $i_{1+x}$M $n_2$ $O_4$ decreases with increases lithium content, while the cycle life improves. The initial discharge capacity are 118mAh/g and 116mAh/g for LiM $n_2$ $O_4$ decreases with increases lithium content, while the cycle life improves. The initial discharge capacity are 118mAh/g and 116mAh/g for LiM $n_2$ $O_4$ and L $i_{1.025}$M $n_2$ $O_4$, respectively.pectively.

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Effects of $Nb_2O_5$, and Oxygen Potential on Sintering Behavior of $UO_2$ Fuel Pellets

  • Song, Kun-Woo;Kim, Keon-Sik;Kang, Ki-Won;Jung, Youn-Ho
    • Nuclear Engineering and Technology
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    • v.31 no.3
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    • pp.335-343
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    • 1999
  • The effects of N $b_2$ $O_{5}$ and oxygen potential on the densification and grain growth of U $O_2$ fuel have been investigated.0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$fuel pellets were sintered at 1$700^{\circ}C$ for 4 hours in sintering atmospheres which have various ratios of $H_2O$ to $H_2$ gas. Compared with those of undoped U $O_2$ pellets, the sintered density and grain size of the 0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$ pellet increase under the $H_2O$/ $H_2$ gas ratio of 5.0$\times$10$^{-3}$ to 1.0$\times$10$^{-2}$ and under the $H_2O$/ $H_2$gas ratio of 5.0$\times$10$^{-3}$ to $1.5\times$10$^{-2}$ , respectively. The sintering of U $O_2$fuel pellets containing 0.1 wt% to 0.5 wt% N $b_2$ $O_{5}$ was carried out at 168$0^{\circ}C$ for 4 hours. The enhancing effect of N $b_2$ $O_{5}$ on the sintered density and grain size becomes larger as the N $b_2$ $O_{5}$ content increases. The solubility limit of N $b_2$ $O_{5}$ in U $O_{2}$ seems to be between 0.3 wt% and 0.5 wt%, and beyond the solubility limit the second phase whose composition corresponds near to N $b_2$U $O_{6}$ is precipitated on grain boundary. The enhancement of densification and grain growth in U $O_2$ is attributed to the increased concentration of a uranium vacancy which is formed by the interstitial N $b^{4+}$ ion in the U $O_2$ lattice.

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A study on the electromagnetic properties of Mn-Zn Ferrite doped with $Ho_2O_3$ ($Ho_2O_3$가 첨가된 Mn-Zn ferrite의 전자기적인 특성연구)

  • 김성수;김태원;정승우;백승철;최우성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.265-268
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    • 1999
  • In this study, we investigated the electromagnetic Properties of M $n_{Y}$Z $n_{1-x}$ F $e_{x}$ $O_4$(X=0.67~0.69, Y=0.13~0.19) doped with and without H $o_2$ $O_3$(each of 0.05~ 0.2wt%, step 0.05wt%). The greatest initial permeability of composition is M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$. As X and Y components, increased. generally resistivity slightly change by the various X and Y components. The initial permeability of M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$ doped with H $o_2$ $O_3$ showed the about 2.5 times higher than that of M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$ doped without H $o_2$ $O_3$EX>EX>EX>X>>EX>EX>EX>X>

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Treatment Characteristics of Trichloroethylene(TCE) by Oxidation and Reduction with Nanoscale Zero-valent Iron (나노영가철의 산화·환원에 의한 트리클로로에틸렌 처리특성)

  • Park, Young-Bae;Jung, Yong-Jun;Choi, Jeong-Hak;Moon, Boung-Hyun
    • Journal of Environmental Science International
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    • v.23 no.5
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    • pp.903-910
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    • 2014
  • This study examined the treatment characteristics of hard-to-degrade pollutants such as TCE which are found in organic solvent and cleaning wastewater by nZVI that have excellent oxidation and reduction characteristics. In addition, this study tried to find out the degradation characteristics of TCE by Fenton-like process, in which $H_2O_2$ is dosed additionally. In this study, different ratios of nZVI and $H_2O_2$, such as 1.0 mM : 0.5 mM, 1.0 mM : 1.0 mM, and 1.0 mM : 2.0 mM were used. When 1.0 mM of nZVI was dosed with 1.0 mM of $H_2O_2$, the removal efficiency of TOC was the highest and the first order rate constant was also the highest. When 1mM of nZVI was dosed with 0.5 mM of $H_2O_2$, the first order rate constant and removal efficiency were the lowest. The size of first order rate constant and removal efficiency was in the order of nZVI 1.0 mM : $H_2O_2$ 1.0 mM > nZVI 1.0 mM : $H_2O_2$ 2.0 mM > nZVI 1.0 mM : $H_2O_2$ 0.5 mM > $H_2O_2$ 1.0 mM > nZVI 1.0 mM. It is estimated that when 1.0 mM of nZVI is dosed with 1.0 mM of $H_2O_2$, $Fe^{2+}$ ion generated by nZVI and $H_2O_2$ react in the stoichiometric molar ratio of 1:1, thus the first order rate constant and removal efficiency are the highest. And when 1.0 mM of nZVI is dosed with 2.0 mM of $H_2O_2$, excessive $H_2O_2$ work as a scavenger of OH radicals and excessive $H_2O_2$ reduce $Fe^{3+}$ into $Fe^{2+}$. As for the removal efficiency of TOC in TCE by simultaneous dose and sequential dose of nZVI and $H_2O_2$, sequential dose showed higher first order reaction rate and removal efficiency than simultaneous dose. It is estimated that when nZVI is dosed 30 minutes in advance, pre-treatment occurs and nanoscale $Fe^0$ is oxidized to $Fe^{2+}$ and TCE is pre-reduced and becomes easier to degrade. When $H_2O_2$ is dosed at this time, OH radicals are generated and degrade TCE actively.