• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.48-51
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• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

• Applied Chemistry for Engineering
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• v.27 no.1
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• pp.92-100
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• 2016

Low-temperature conversion of nitrogen oxides using plasma-assisted hydrocarbon selective catalytic reduction of (HC-SCR) was investigated. Plasma was created in the catalyst-packed bed so that it could directly interact with the catalyst. The effect of the reaction temperature, the shape of catalyst, the concentration of n-heptane as a reducing agent, the oxygen content, the water vapor content and the energy density on $NO_x$ removal was examined. $NO_x$ conversion efficiencies achieved with the plasma-catalytic hybrid process at a temperature of $250^{\circ}C$ and an specific energy input (SIE) of $42J\;L^{-1}$ were 83% and 69% for one-dimensional Ag catalyst ($Ag\;(nanowire)/{\gamma}-Al_2O_3$) and spherical Ag catalyst ($Ag\;(sphere)/{\gamma}-Al_2O_3$), respectively, whereas that obtained with the catalyst-alone was considerably lower (about 30%) even with $Ag\;(nanowire)/{\gamma}-Al_2O_3$ under the same condition. The enhanced catalytic activity towards $NO_x$ conversion in the presence of plasma can be explained by the formation of more reactive $NO_2$ species and partially oxidized hydrocarbon intermediates from the oxidation of NO and n-heptane under plasma discharge. Increasing the SIE tended to improve $NO_x$ conversion efficiency, and so did the increase in the n-heptane concentration; however, a further increase in the n-heptane concentration beyond $C_1/NO_x$ ratio of 5 did not improve the $NO_x$ conversion efficiency any more. The increase in the humidity affected negatively the $NO_x$ conversion efficiency, resulting in lowering the $NO_x$ conversion efficiency at the higher water vapor content, because water molecules competed with $NO_x$ species for the same active site. The $NO_x$ conversion efficiency increased with increasing the oxygen content from 3 to 15%, in particular at low SIE values, because the formation of $NO_2$ and partially oxidized hydrocarbon intermediates was facilitated.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• Applied Chemistry for Engineering
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• v.34 no.5
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• pp.507-514
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• 2023

The selective catalytic reduction (SCR) of nitrogen oxides (NO_x) was investigated in a catalyst (Ag/γ-Al₂O₃) packed dielectric barrier discharge plasma reactor. The intermittent generation of plasma in the catalyst bed partially oxidized the hydrocarbon reductant for NO_x removal to several aldehydes. Compared to using the catalyst alone, higher NO_x conversion was observed with the intermittent generation of plasma due to the formation of highly reductive aldehydes. Under the same operating conditions (temperature: 250 ℃; C/N: 8), the NO_x reduction efficiencies were 47.5%, 92%, and 96% for n-heptane, propionaldehyde, and butyraldehyde, respectively, demonstrating the high NO_x reduction capability of aldehydes. To determine the optimal condition for intermittent plasma generation, the high voltage on/off cycle was adjusted from 0.5 to 3 min. The NO_x reduction performance was compared between continuous and intermittent plasma generation on the same energy density basis. The highest NO_x reduction efficiency was achieved at 2-min high voltage on/off intervals. The reason that the intermittent plasma discharge exhibited higher NO_x reduction efficiency even at the same energy density, compared to the continuous plasma generation case, is that the intermediate products, such as aldehydes generated from hydrocarbon, were more efficiently utilized for the reduction of nitrogen oxides.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.44 no.5
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• pp.484-489
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• 2011

This study examined whether N-acetylcysteine (NAC), a glutathione precursor, could attenuate toxic effects of three fish anti-parasitic agents, trichlorfon, hydrogen peroxide ($H_2O_2$) and formalin, all of which are known to exert side effects through free radical production. Common carp Cyprinus carpio were fed with NAC (approx. 50 mg/kg/day) for 3 consecutive days prior to anti-parasite bathing for a 24 hr period. Mortality rates were examined during this 24 hr bathing period, and selected hematological and biochemical parameters were also assessed at the termination of anti-parasite exposure. The mortality rates and plasma glucose elevations caused by all three anti-parasitics were significantly reduced by NAC pretreatment. Trichlorfon, but not $H_2O_2$ or formalin, elevated plasma levels of aspartatetransaminase (AST) and alanine-transaminase (ALT), and these elevations were attenuated by NAC. There was no change in hematocrit values in any treatment. The results provide evidence for the attenuating effects of NAC against toxicity caused by anti-parasite agents that act through free radical-producing properties. The results found in this study also suggest that NAC may be administered to fish to minimize toxicity in fish parasiticide use.

• Journal of Surface Science and Engineering
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• v.47 no.5
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• pp.252-256
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• 2014

The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at $700-1000^{\circ}C$. It displayed relatively good oxidation resistance owing to the formation of $TiO_2$, $Al_2O_3$, $Cr_2O_3$, and $SiO_2$ up to $900^{\circ}C$. However, at $1000^{\circ}C$, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.131-135
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• 2005

The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.185-188
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• 2002

This paper describes the information for quantitative simulation of weakly ionized plasma. We should grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in $SF_6+O_2$ mixture gas calculated for range E/N values l~900[Td] at the temperature is 300[$^{\circ}K$] and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. It has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with pure $SF_6$, pure $O_2$ and mixture gas.