• 정보보호학회논문지
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• 제23권2호
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• pp.147-155
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• 2013

프록시 재암호화 기법은 데이터를 재암호화 하는 과정에서 평문이 노출되지 않는 장점이 있다. 이 기법은 최근 클라우드 컴퓨팅, 모바일 오피스 등 서버를 이용하는 환경에서 저장된 데이터를 안전하게 공유하기 위한 기법으로 각광 받고 있다. 하지만 기존 기법은 재암호화 키를 반복적으로 사용할 수 있어 재암호화 오남용 문제가 발생한다. 이를 해결하기 위해 조건부 프록시 재암호화 기법이 제안되었지만 조건값의 수만큼 재암호화키를 생성해야하는 부담이 있다. 본 논문에서는 재암호화 키 생성 측면에서 효율적인 조건부 프록시 재암호화 기법을 제안하였다. 제안하는 기법은 조건값의 사용을 암호화와 복호화 과정으로 제한하여 조건값이 많아지더라도 재암호화 키를 추가로 생성하지 않아도 되는 장점이 있다. Weng 등의 기법이 재암호화 키 생성에 따른 시간 복잡도가 O(n)인 것에 비해, 제안하는 기법은 O(1)의 시간 복잡도를 가진다. 또한, 제안하는 기법은 선택적 암호문 공격에 안전하도록 설계되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• 한국광학회지
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• 제19권1호
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• pp.54-59
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• 2008

적외선 영역에서 극초단 펄스 폭을 갖는 $Cr^{4+}$:YAG 레이저를 광자 결정 광섬유에 입사하여 초 연속 스펙트럼을 갖는 광원을 얻어냈다. 이 광원을 이용하여 광통신 파장 영역에서 많은 흡수 전이선을 갖는 아세틸렌($^{12}C_2H_2$) 및 시안화 수소($H^{13}C^{14}N$) 분자의 흡수 스펙트럼을 측정하였다. 초 연속 스펙트럼을 얻기 위해 펌핑 광원으로 모드 잠금된 $Cr^{4+}$:YAG 레이저를 사용하였다. 모드 잠금된 $Cr^{4+}$:YAG 레이저는 중심파장이 1510 nm 대역에서 반복률이 100 MHz이고, 펄스폭은 75 fs이다. 모드 잠금된 $Cr^{4+}$:YAG 레이저 출력을 20 m의 광자 결정 광섬유에 집속시켜 진폭변동이 ${\pm}5dB$이하에서 400 nm 이상의 평탄한 초 연속 스펙트럼을 얻었으며, 전체적으로 한 octave 이상의 초 광대역 광원을 얻었다. 이 광원을 이용하여 50개 이상의 흡수 전이선을 갖는 아세틸렌 분자($^{12}C_2H_2$)와 시안화 수소 분자($H^{13}C^{14}N$)의 흡수 스펙트럼을 측정하고, Voigt 곡선 맞춤을 이용하여 Lorentian 성분의 흡수 선폭을 각각 측정하였다. 이와 같은 초 광대역 광원의 스펙트럼을 이용하면 O, S, C, L 밴드와 같은 대역에 존재하는 분자의 흡수 스펙트럼 측정에 있어 유용하게 사용될 수 있다.

• Tribology and Lubricants
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• 제35권5호
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• 센서학회지
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• 제14권1호
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• pp.22-27
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• 2005

A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

• 한방비만학회지
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• 제23권2호
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• pp.69-77
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• 2023

Objectives: Atriplex gmelinii C. A. Meyer is a halophyte belonging to the Chenopodiaceae family, and its young leaves and stems are used as fodder for livestock. The aim of the present study was to investigate the effects of A. gmelinii extract and its solvent fractions on lipid accumulation during adipogenesis of 3T3-L1 preadipocytes. Methods: The samples of A. gmelinii were separately extracted using methylene chloride and methanol. Subsequently, they were combined to formulate the initial extract, which was then partitioned based on polarity to prepare solvent fractions. Oil Red O staining was employed to measure lipid accumulation during the differentiation of 3T3-L1 preadipocytes. To verify cytotoxicity in 3T3-L1 cells, MTT assays were conducted. The expression levels of transcription factors in 3T3-L1 preadipocytes were measured through Western blotting analysis. Results: At 50 ㎍/mL, treatment of A. gmelinii extract and its solvent fractions during the differentiation of 3T3-L1 preadipocytes significantly diminished lipid accumulation with no noteworthy cytotoxicity on cell viability. Additionally, when investigating the biochemical pathways that underlie the prevention of lipid accumulation using solvent fractions, it was found that the n-BuOH and n-hexane fractions significantly decreased the expression of key transcription factors involved in the generation of fat, such as peroxisome proliferator-activated receptor γ (PPARγ), CCAAT/enhancer binding protein α (C/EBPα), and sterol regulatory element-binding protein-1c (SREBP1c). Conclusions: These findings indicate that A. gmelinii can effectively reduce the accumulation of fat in 3T3-L1 adipocytes, making it a potentially valuable material for mitigating and preventing obesity.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 춘계학술발표회논문집(4)
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• pp.101-106
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• 1996

For the application of the neutron flux mapping, an accurate calculation of the sensitivity is required because the sensitivity is proportional to the neutron flux density. Sensitivity is defined as the current per unit length per unit neutron flux and it mainly depends on the depression factor(f), the escape probability from the emitter($\varepsilon$1) and the charge build-up factor of the insulator layer(c). A Monte Carlo simulation was accomplished to calculate the sensitivity of rhodium emitter material and alumina(Al$_2$O$_3$) insulator with a cylindrical geometry, based on the (n,${\beta}$) interaction and on other interaction including the secondary electron generation for the more accurate estimation of the sensitivity. From the simulation results, factors fur the sensitivity were accurately calculated and compared with other theoretical and experimental values. In addition, the sensitivity linearly increases and saturates as the emitter radius increases. The accomplished method is useful in the analysis for the change of SPND sensitivity as a function of burn-up and in the optimum design of SPND.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.569-574
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• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

• 한국수소및신에너지학회논문집
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• 제28권6호
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• pp.601-609
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• 2017

Hydrogen is a clean, endlessly produced energy and it is easy to store and transfer. So, hydrogen is regarded as next generation energy. Among various ways for hydrogen production, the way to produce hydrogen by water electrolysis can effectively respond to fossil fuel's depletion or climate change. As interest in hydrogen has increased, related research has been actively conducted in many countries. In this study, we analyzed the performance characteristics and safety of water electrolysis system. In this study, we analyzed the performance characteristics and safety of water electrolysis system. The items for safety performance evaluation of the water electrolysis system were derived through analysis of international regulations, codes, and standards on hydrogen. Also, a prototype of the overall safety performance evaluation station was designed and developed. The demonstration test was performed with a prototype $10Nm^3/h$ class water electrolysis system that operated stably under various pressure conditions while measuring the stack and system efficiency. At 0.7MPa, the efficiency of the alkaline water electrolysis stack and the system that used in this study was 76.3% and 49.8% respectively. Through the GC analysis in produced $H_2$, the $N_2$ (5,157ppm) and $O_2$ (1,646 ppm) among Ar, $O_2$, $N_2$, CO and $CO_2$ confirmed as main impurities. It can be possible that the result of this study can apply to establish the safety standards for the hydrogen production system by water electrolysis.