• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1923-1930
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• 2004

This paper presents digital microflow controllers(DMFC), where a fluidic digital-to-analog converter(DAC) is used to achieve high-linearity, fine-level flow control for applications to precision biomedical dosing systems. The fluidic DAC, composed of binary-weighted flow resistance, controls the flow-rate based on the ratio of the flow resistance to achieve high-precision flow-rate control. The binary-weighted flow resistance has been specified by a serial or a parallel connection of an identical flow resistor to improve the linearity of the flow-rate control, thereby making the flow-resistance ratio insensitive to the size uncertainty in flow resistors due to micromachining errors. We have designed and fabricated three different types of 4-digit DMFC: Prototype S and P are composed of the serial and the parallel combinations of an identical flow resistor, while Prototype V is based on the width-varied flow resistors. In the experimental study, we perform a static test for DMFC at the forward and backward flow conditions as well as a dynamic tests at pulsating flow conditions. The fabricated DMFC shows the nonlinearity of 5.0% and the flow-rate levels of 16(2$^{N}$) for the digital control of 4(N) valves. Among the 4-digit DMFC fabricated with micromachining errors, Prototypes S and P show 27.2% and 27.6% of the flow-rate deviation measured from Prototype V, respectively; thus verifying that Prototypes S and P are less sensitive to the micromachining error than Prototype V.V.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.3
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• pp.21-27
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• 2013

This study is investigated on flow analysis according to grill configuration of radiator. The stream of flow which pass through radiator grill in car body and the contour of pressure distribution are estimated by the basis. As the magnitude of resistance force which flow affects the car body is investigated so that the power reduction can be reduced. As the pressure inside radiator grill is assessed, more efficiency can be investigated in order that the flow rate inside car body can be increased. Model 2 has the most air resistance and model 1 has the least among model 1, 2 and 3. Model 1 has the most air flow rate at inside. There are model 3 and 2 simulated according to flow rate. As the curved surface at radiator grill configuration increases in number, air flow rate becomes distributed uniformly. By considering the effect on air resistance and air flow rate at radiator grill, model 3 becomes the most effective configuration.

• The Journal of Engineering Geology
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• v.11 no.3
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• pp.327-337
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• 2001

To verify the characteristics of groundwater inflow accompanied by the tunnel excavation, the flow rate was measured before and after primary grouting. The relationship between the flow rate and fracture system was also analyzed. The initial flow rate was estimated as 120,990 m$^3$/day through six zones, which were characterized by a large amount of inflow before the primary grouting. After the primary grouting, although considerable amount of inflow was still recognized at the six zones, the flow rate was greatly reduced as 42,844 m$^3$/day. However, great recovery of water levels was not observed. Groundwater flow into the tunnel by excavation of the tunnel is mainly controlled by the fracture system that include faults and joints developed in the host rocks. Four sets of discontinuities affecting on the network of grondwater inflow in the study area were identified as follows: N60-85$^{\circ}C$ W.25$^{\circ}$SW/80$^{\circ}$SW(TSet 1), N40-50$^{\circ}$E.85$^{\circ}$SE/85$^{\circ}$NE(TSet 2), N10-20$^{\circ}$E.85$^{\circ}$SE(TSet 3), and N70-80$^{\circ}$E.80SE(TSet 4).

• Journal of the Korean Society of Industry Convergence
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• v.26 no.1
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• pp.183-191
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• 2023

This study was conducted experimentally to investigate the surface temperature of the heat sink, the air temperature in the flow channel and the sample temperature by changing the channel number of channel type heat sink and the air flow rate when heating and cooling the bio sample. The target temperature of the sample was 15℃ or less as the minimum value and 82℃ or more as the maximum value. In this study, the channel number of the heat sink(N = 1, 2, 4, 5, 10) and the air flow rate(Q=25, 42, 54m³/min) were varied. The bio sample was replaced with water, and the volume of water is 4mL. The size of the heat sink is 80x73x150mm and the material is aluminum. When cooling the sample, the surface temperature, the air temperature and the sample temperature were highly dependent on the number of channels and the flow rate. However, when the sample is heated, the surface temperature, air temperature and sample temperature do not depend on the number of channels and the flow rate. It was found that the conditions for satisfying the minimum temperature of 15℃ or less when cooling the sample were the number of channels N≥5 and the flow rate Q≥42m³/min. When heating the sample, the conditions to satisfy the maximum temperature of 82℃ or more are the number of channels N≤5 and the air flow rate Q≤42m³/min.

• Journal of The Korean Society of Agricultural Engineers
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• v.50 no.2
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• pp.65-71
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• 2008

A monsoon season monitoring data from June to September, 2005 of a small forested watershed located at the upstream of the North Han River system in Korea was conducted to analyze the flow variations, the NPS pollutant concentrations, and the pollution load characteristics with respect to sampling frequencies. During the 4-month period, 1,423 mm or 79.2% of annual rainfall(1,797 mm) were occurred and more than 77%, 54% and 68% of annual T-N, $NO_3$-N and T-P loads discharged. Flow rate was continuously measured with automatic velocity and water level meters and 58 water quality samples were taken and analyzed. It was analyzed that the flow volume by random measurement varied very widely and ranged from 79% to 218% of that of continuous measurement. It was recommended that flow measurement of small forested watersheds should be continuously measured with automated flow meters to precisely measure flow rates. Flow-weighted mean concentrations of T-N, $NO_3$-N and T-P during the period were 2.114 mg/L, 0.836 mg/L, and 0.136 mg/L, respectively. T-N, $NO_3$-N and T-P loads were sensitive to the number of samples. And it was analyzed that in order to measure the pollution load within the error of 10% to the true load, the rate of sampling frequency should be higher than 89.7% of the sample numbers that were required to compute the true pollution load. If it is compared to selected foreign research results, about 10 water samples for each rainfall event were needed to compute the pollution load within 10% error. It is unlikely in Korea and recommended that thorough NPS pollution monitoring studies are required to develop the standard monitoring procedures for reliable NPS pollution quantification.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.13-16
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• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Journal of Environmental Science International
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• v.30 no.5
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• pp.399-406
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• 2021

The dissolution of ionized gas in dielectric barrier plasma, similar to the principle of ozone generation, is a major performance-affecting factor. In this study, the plasma gas dissolving performance of a gas mixing-circulation plasma process was evaluated using an experimental design methodology. The plasma reaction is a function of four parameters [electric current (X₁), gas flow rate (X₂), liquid flow rate (X₃) and reaction time (X₄)] modeled by the Box-Behnken design. RNO (N, N-Dimethyl-4-nitrosoaniline), an indictor of OH radical formation, was evaluated using a quadratic response surface model. The model prediction equation derived for RNO degradation was shown as a second-order polynomial. By pooling the terms with poor explanatory power as error terms and performing ANOVA, results showed high significance, with an adjusted R² value of 0.9386; this indicate that the model adequately satisfies the polynomial fit. For the RNO degradation, the measured value and the predicted values by the model equation agreed relatively well. The optimum current, gas flow rate, liquid flow rate and reaction time were obtained for the highest desirability for RNO degradation at 0.21 A, 2.65 L/min, 0.75 L/min and 6.5 min, respectively.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.257-262
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• 1999

The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/ sapphire substrate using $SiO_2$ mask. We investgated the effect of growth parameters such as flow rate of $NH_3$(500­~1300sccm) and the growth temperature(TEX>$950~1060^{\circ}C$) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH, and growth temperature in­creased. But the grown GaN shapes on the substrate windows was independent of the flow rate of $NH_3$. On the pattern shapes such as circle, stripe, and radiational pattern(rotate the stripe pattern by $30^{\circ}, 45^{\circ}$), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition.