• Journal of the Korean institute of surface engineering
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• v.20 no.3
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• pp.106-117
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• 1987

The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.9
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• pp.1151-1162
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• 1999

The effects of radial heat and $H_2O$ diffusion on the evolution of silica particles in coflow diffusion flames have been studied experimentally. The evolution of silica aggregate particles in coflow diffusion flames has been measured experimentally using light scattering and thermophoretic sampling techniques. The measurements of scattering cross section from $90^{\circ}$ light scattering have been utilized to calculate the aggregate number density and volume fraction using with combination of measuring the particle size and morphology through the localized sampling and a TEM image analysis. Aggregate or particle number densities and volume fractions were calculated using Rayleigh-Debye-Gans and Mie theory for fractal aggregates and spherical particles, respectively. Flame temperatures and volumetric differential scattering cross sections have been measured for different flame conditions such as inert gas species, $H_2$ flow rates, and burner injection configurations to examine the relation between the formation of particles and radial $H_2O$ diffusion. The comparisons of oxidation and flame hydrolysis have also been made for various $H_2$ flow rates using $N_2$ or $O_2$ as a carrier gas. Results indicate that the role of oxidation becomes dominant as both carrier gas($O_2$) and $H_2$ flow rates increases since the radial heat diffusion precedes $H_2O$ diffusion in coflow flames used in this study. The effect of carrier gas flow rates on the evolution of silica particles have also been studied. When using $N_2$ as a carrier gas, the particle volume fraction has a maximum at a certain carrier gas flow rate and as the flow rate is further increased, the hydrolysis reaction Is delayed and the spherical particles finally evolves into fractal aggregates due to decreased flame temperature and residence time.

• International Journal of Vascular Biomedical Engineering
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• v.1 no.2
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• pp.13-19
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• 2003

Endothelial release of nitric oxide (NO) contributes to the regulation of vascular tone by inducing vascular relaxation. To estimate the blood flow-dependent nitric oxide level and half-life (T1/2) of nitric oxide in vivo state, we investigated the change of aortic NO currents during the change of aortic blood flow rate using NO-selective electrode system and electromagnetic flowmeter in the aorta of anesthetized rats. Resting mean aortic blood flow rate was $49.6{\pm}5.6ml/min$ in the anesthetized rats. NO currents in the aorta were increased by the elevation of blood pressure and/or blood flow rate. When the aortic blood flow was occluded by the clamping, aortic NO currents were decreased. The difference of NO concentration between resting state and occluded state was $1.34{\pm}0.26{\mu}M$ (n=7). This NO concentration was estimated as blood flow-dependent nitric oxide concentration in the rats. Also, while the aortic blood flow was occluded, NO currents were decreased with exponential pattern with $12.84{\pm}2.15$ seconds of time constant and $7.70{\pm}1.07$ seconds of half-life. To summarize, this study suggested that blood flow-dependent NO concentration and half-life of nitric oxide were about $1.3{\mu}M$ and 7.7 seconds, respectively, in the aorta of anesthetized rats. The nitric oxide-selective electrode system is useful for the direct and continuous measurement of NO in vivo state.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2002.04a
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• pp.66-69
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• 2002

In this work, cost effective venting is considered by comparing flow rates of 5$m\ell$/min, 10$m\ell$/min, and 20$m\ell$/min. Studies were performed on a soil artificially contaminated with diesel oil (the initial TPH(Total Petroleum Hydrocarbon) concentration of 7098mg/kg), and nutrient condition was C:N:P rate of 100:10:1. The soil has a sandy texture with pH of 6.8, 2.16 ~2.38% organic matter, a total porosity of 47~52% and field capacity 16.2~ 17.2%. The column experiments was made of glass column of 60cm length and 10cm I.D. at controlled temperature of 2$0^{\circ}C$($\pm$2.5$^{\circ}C$). The efficiency of continuous flow rate of 5, 10 and 20$m\ell$/min resulted in separately 61.3%, 58.1%, and 55% reduction of initial TPH concentration(7098mg/kg). Hydrocarbon utilizing microbial count and dehydrogenase activity in air flow of 5$m\ell$/min were higher than those of the others. The first order degradation rate of n-alkanes ranging from C10 to C28 was higher than that of pristane and phytane as isoprenoids. The $C_{17}$/pristane and $C_{18}$phytane ratios for monitoring the degree of biodegradation were useful only during the early stages of oil degradation. Degradation contributed from about 89% to 93% of TPH removal. Volatilization loss of diesel oil in contaminated soil was about 7% to 11%, which was significantly small compared to degradation.n.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.1-5
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• 2009

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.05a
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• pp.719-724
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• 2003

The present experimental study deals with noise reduction and improvements in cooling performance in a plasma display panel(PDP) television (TV). To reduce the noise, the effects of installation parameters are studied. The experimental parameters under investigation are the distance between the fan and the rear case of a PDP TV, position of the strut on the fan, and the fan RPM. The variance of RPM is the most significant facto., and a 250 RPM decrease from 910 RPM causes about 4㏈(A) reduction in the system noise. To increase performance, flow characteristics are investigated by using a visualization technique and measuring the volume flow rate. The visualized results show that a radial direction flow due to large system resistance is significant, and an axial velocity oscillation is observed from the measurement of the volume flow rate. To prevent both a radial direction flow and an axial velocity oscillation, sponges are inserted in the space between f3n and the rear case. Inserted sponges improve the volume flow rate of cooling fans up to 32% since they convert a radial direction flow to an axial direction flow. Also an axial velocity oscillation with large amplitude and low RPM disappears. Increasing volume flow rate causes the PDP TV to improve its cooling performance. Additionally the same volume flow rate can be obtained with a decreased fan speed due to the inserted sponge. Noise reductions of 4.2 ㏈(A) at the rear and 1.1 ㏈(A) at the front of the TV are obtained by the decreased RPM. An increase of 10% of the volume flow rate is also achieved by inserting sponges.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.