• Journal of Animal Science and Technology
• /
• v.47 no.6
• /
• pp.963-974
• /
• 2005

This study was conducted to examine the growth performance, carcass characteristics, physico-chemical properties and fatty acid composition of muscle tissues of Hanwoo steers when they were fed diets containing four levels of E. ulmoides leaves. Steers were allotted to one of four dietary treatments, which were designed to progressively substitute Eucommia ulmoides for 0, 3, 5 and 10% of the rice straw in the basal diet. Seventy two Hanwoo steers (321±13kg) were used. Average daily gain (0.81-0.86kg) and feed conversion (10.05-10.59) were not changed by feeding E. ulmoides leaves. Emission of fecal ammonia gas was decreased by increasing substitution levels of E. ulmoides leaves. Emission of ammonia gas in feces of steers were significantly (p<0.05) decreased in the 5% and 10% treatments at 40℃ compared with in control (30.6ppm) and 3% treatment (29.8ppm), respectively 20.3 and 21.6ppm. Back fat thickness was higher (p<0.05) in steers fed control diet (15.0mm) than 5 and 10% E. ulmoides diets (10.2 and 10.5mm respectively). The grade ‘A’ appearances of meat yield of steers were increased up to 20% by the 3% substitution of E. ulmoides leaves, and the grades ‘1+’ and ‘1’ appearances of meat quality were significantly improved (p<0.05) by the 5 and 10% Eucommia ulmoides feeding. There was no statistical difference in meat color of loin and top round among all treatments. It appeared that the 5% and 10% E. ulmoides leaves feeding affected (p<0.05) a increase in oleic acid concentration in loin and top round muscles. The concentration of serum cholesterol was lower (p<0.05) in steers fed 10% E. ulmoides (53.3mg/100g) than that of the other treatments (55.7-57.0mg/100g). The diarrhea incidence was about 20.26% in control, while it was lower (p<0.05) in the 5 and 10% E. ulmoides leaves treatments (10.4-12.5%) than control. There was no statistical difference in the occurrences of respiratory disease among all treatments. It is concluded that E. ulmoides leaves should be a prospective feed additive because it contains various functional substances. It is likely that air-dried E. ulmoides leaves can reduce the back fat thickness of Hanwoo steers and the occurrences of diarrhea. Therefore, the 5 and 10% substitution of E. ulmoides for roughage are highly recommended to be used in practice.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.49.1-49.1
• /
• 2009

산업화 이후, 석탄 석유를 중심으로 한 화석연료가 이산화탄소를대량으로 배출하며 지구 온난화를 야기함에 따라, 석유를 대체할 새로운 에너지원에 대한 관심이 높아지고 있다. 많은 대체에너지 가운데, 청정하고 무한 재생 가능한대체에너지를 이야기할 때, 가장 큰 기대를 받고 있는 것은 태양에너지이며, 이에 보조를 맞춰 태양광 발전에 대한 연구개발이 국내외적으로 활발히 진행되고 있는 실정이다. 태양 전지는 빛 에너지를 직접 전기 에너지로 바꿔주는 소자로, 셀의효율을 높이기 위해서는 최대한 많은 빛을 흡수시킬 수 있는 것이 중요하다. 빛의 반사를 줄이는 방법에는 Texturing 과 Antireflecting coating 이있다. Antireflecting coating은 반도체와 공기의 중간 굴절율을 갖는 박막을 증착하여 측면 반사를 감소시킴으로서 빛의 손실을 감소시키는 역활을 한다. 반사 방지막으로 쓰이는 SiNx는 SiOx의 대체 물질로 굴절률이 약 1.5로서 Si에 쉽게 형성시킬 수 있고, texturing된 Si 표면에 적합하며 반사율을 10 %에서 2 %로 줄일 수 있다. 나아가 고성능의 반사방지막은 박막의 균일도확보 및 passivation 공정이 필수적이라 판단된다. 따라서 본 연구에서는 PECVD 방법으로 SiH4와 NH3 gas 의 비율을 변화시켜 증착한 SiNx 박막의 결정학적 특성을 X-ray Diffraction 분석과 TEM (TransmissionElectron Microsopy) 을 통해 관찰하였으며, XPS (X-rayphotoelectron spectroscopy) 를 통해 화학적결합을 확인하였고, 이를 FT-IR (Fourier Transform-Infrared spectroscopy)를 통해 관찰한 결과와 연관시켜분석하였다. 굴절율의 경우 Ellipsometry를 이용하여측정하였으며 위의 측정을 통하여 SiNx박막의 반사 방지막으로써의 가능성을 확인하였다.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.208-213
• /
• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Proceedings of the KAIS Fall Conference
• /
• 2012.05a
• /
• pp.30-32
• /
• 2012

본 연구에서는 Cu, Mn을 함침 시킨 상용 제올라이트13X 촉매에 CO 산화 전환 반응에 영향을 연구하였다. 촉매 제조는 담지량별로 Cu, Mn을 서로 다른 비율로 물리 혼합하여 상용 제올라이트에 담지하였다. 함침방법은 과잉용액 함침법을 사용하였고, 건조 후 공기분위기에서 소성하여 산화물 형태로 담지하였다. 기본적인 촉매 특성은 X-선 회절분석, 질소흡탈착 등온곡선을 이용하여 기공크기, 기공부피, 비표면적을 구하였으며, FT-IR, 주사현미경, $NH_3$-TPD/TPR, EDX로 특성을 분석하였다. 촉매 산화반응 실험은 고정층 반응기에서 수행하였으며, 외경1/4 inch(내경 4 mm)석영관에 촉매를 중진하고 Gas Chromatograph로 배출가스를 측정하여 Cu-Mn 제올라이트 촉매의 일산화탄소 산화반응을 연구하였다. 일산화탄소 농도, 온도 및 공간속도, Cu-Mn 함량 비율에 따른 산화반응 실험을 수행하여 최적 산화조건과 촉매를 도출하였다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.62.2-62.2
• /
• 2011

산업화 이후, 석탄 석유를 중심으로 한 화석연료가 이산화탄소를 대량으로 배출하며 지구 온난화를 야기함에 따라, 기존의 화석연료를 대체할 청정하고 무한 재생 가능한 대체에너지로 가장 큰 기대를 받고 있는 것은 태양에너지이며, 이에 보조를 맞춰 태양광발전에 대한 연구개발이 국내외적으로 활발히 진행되고 있는 실정이다. 태양 전지는 빛 에너지를 직접 전기 에너지로 바꿔주는 소자로, 셀의 효율을 높이기 위해서는 최대한 많은 빛을 흡수시킬 수 있는 것이 중요하다. 빛의 반사를 줄이는 방법에는 texturing과 antireflecting coating이 있다. Antireflecting coating은 반도체와 공기의 중간 굴절율을 갖는 박막을 증착하여 측면 반사를 감소시킴으로서 빛의 손실을 감소시키는 역할을 한다. 과거에 반사방지막으로 가장 많이 사용되었던 물질은 SiO로써 굴절률은 1.8~1.9로서 최소의 반사율은 1% 미만이지만, 가시광선영역에서의 흡수에 의한 손실이 생기므로, SiNx가 대체 물질로 제안되었다. SiNx의 경우 굴절률이 약 1.5로서 Si에 쉽게 형성시킬 수 있고, texturing된 Si 표면에 적합하며 반사율을 10%에서 2%로 줄일 수 있는 장점을 가지고 있다. 따라서 본 연구에서는 high power, high frequency PECVD 방법으로 $SiH_4$와 $NH_3$ gas의 비율, $N_2$ carrier gas 등 공정 변수를 변화시켜 증착한 SiNx 박막의 결정학적 특성을 X-ray diffraction 분석과 XPS (X-ray photoelectron spectroscopy)를 통해 화학적 결합을 확인하였고, 이를 FT-IR (Fourier Transform-Infrared spectroscopy)를 통해 관찰한 결과와 연관시켜 분석하였다. 굴절율의 경우 ellipsometer를 이용하여 측정하였으며 위의 측정을 통하여 SiNx박막의 반사 방지막으로써의 가능성을 확인 하였다.

• Asian-Australasian Journal of Animal Sciences
• /
• v.15 no.6
• /
• pp.851-858
• /
• 2002

This study was conducted to determine effects of whole (intact), coarsely-ground (4 mm), finely-ground (1 mm), steam-flaked and steam-flaked-ground (1 mm) corns on in vitro and in situ DM digestibilities and also in vitro fermentation characteristics. After 48 h incubation, in vitro dry matter digestibilities of whole, steam-flaked, coarsely-ground, steam-flaked-ground, and finely-ground corns were 6.79, 61.68, 76.48, 85.72 and 90.31%, respectively. Steam-flaked-ground corn showed the highest digestibility until 24 h incubation (p<0.01). After 48 h incubation, pH of whole corn decreased with a small range. However the values of pH of other media significantly decreased (p<0.01). The gas productions of finely-ground and steam-flaked-ground corns were higher than those of the other corns (p<0.01). After 24 h incubation, $NH_3$-N concentration of finely-ground and steam-flaked-ground corns increased rapidly. Total VFA was the highest in finely-ground corn, followed by steam-flaked-ground, steam-flaked, coarsely-ground and whole corns. Incorporating steam-flaked corn resulted in the highest propionate concentration (p<0.01) and the lowest acetate : propionate value (p<0.05). Finely-ground corn showed the highest in situ DM digestibility throughout the incubation period (p<0.01), followed by coarsely-ground, steam-flaked and whole corns, respectively. Overall, DM of whole corn was merely digested in vitro as well as in situ.

• Asian-Australasian Journal of Animal Sciences
• /
• v.24 no.4
• /
• pp.471-478
• /
• 2011

The objectives were to compare the ability of various rumen microbial fractions to reduce nitrate and to assess the effect of nitrate on in vitro fermentation characteristics. Physical and chemical methods were used to differentiate the rumen microbial population into the following fractions: whole rumen fluid (WRF), protozoa (Pr), bacteria (Ba), and fungi (Fu). The three nitrogen substrate treatments were as follows: no supplemental nitrogen source, nitrate or urea, with the latter two being isonitrogenous additions. The results showed that during 24 h incubation, WRF, Pr and Ba fractions had an ability to reduce nitrate, and the rate of nitrate disappearance for the Pr fraction was similar to the WRF fraction, while the Ba fraction needed an adaptation period of 12 h before rapid nitrate disappearance. The WRF fraction had the greatest methane ($CH_4$) production and the Pr fraction had the greatest prevailing $H_2$ concentration (p<0.05). Compared to the urea treatment, nitrate diminished net gas and $CH_4$ production during incubation (p<0.05), and ammonia-N ($NH_3$-N) concentration (p<0.01). Nitrate also increased acetate, decreased propionate and decreased butyrate molar proportions (p<0.05). The Pr fraction had the highest acetate to propionate ratio (p<0.05). The Pr fraction as well as the Ba fraction appears to have an important role in nitrate reduction. Nitrate did not consistently alter total VFA concentration, but it did shift the VFA profile to higher acetate, lower propionate and lower butyrate molar proportions, consistent with less $CH_4$ production by all microbial fractions.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.25.2-25.2
• /
• 2010

CNT(Carbon Nanotube)는 특이한 구조 및 뛰어난 물성을 갖고 있어, 여러가지 분야에 응용 가능한 신소재로서 연구되어 왔다. 또한 모양 및 구조에 따라 기계, 전기, 화학적인 특성이 달라 다양한 분야에서 활용이 가능하다. 외국에서는 FED tip, TR, 디스플레이 소자, 수소저장체, 고강도 복합체 및 대 표면적 전극 등 CNT의 다양한 특성을 이용한 응용이 연구되고 있는 반면, 국내에서는 이론연구와 합성연구에 편중되어 있다. 본 연구에서는 열 화학 기상법 (Thermal CVD)을 이용하여 MWNT(Multi-wall nano tube)를 성장시켜 촉매두께, 온도, gas변수에 따른 CNT의 양상을 분석하였다. Ni catalyst는 DC magnetron sputter를 이용하여 5~50nm 두께로 증착하였으며, 성장온도는 $800^{\circ}C$에서 $950^{\circ}C$까지 변화시켰다. 기판의 pre-treatment 로 ammonia($NH_3$) gas를 주입한 후, carbon precursor인 methane($CH_4$) gas와 $H_2$ dilute gas를 1:4의 비율로 주입하여 CNT를 성장시켰다. FE-SEM과 TEM, 그리고 XRD를 이용해 성장된 CNT의 형상 및 구조를 분석한 결과, 낮은 온도에서는 100nm이상의 두께를 갖는 수직형상의 MWNT가 성장되었으며, $900^{\circ}C$이상의 높은 온도에서는 20nm이하의 amorphous carbon nano rod가 성장되었다. 각각의 MWNT, carbon nano rod는 온도가 높을수록 직경이 증가하는 추세를 나타냈으며, Ni catalyst가 얇아질수록 수직형상을 갖는 결과가 나타났다. 또한 ammonia gas의 pre-treatment여부에 따라 CNT의 수직 형상이 좌우되는 결과를 확인하였다. 향후 성장된 MWNT의 최적 조건을 도출하여 디스플레이 소자인 FED(Field Emission Display)분야 등에 응용 가능할 것으로 전망된다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.139-145
• /
• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.2 s.11
• /
• pp.39-43
• /
• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.