• Title/Summary/Keyword: $NH_3$ gas

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지능형 무선통신용 가스 센서 모듈 구현 (The Realization on GAS Sensor Module for Inteligent Wireless Communication)

  • 김효찬;원영수;조형래
    • 한국ITS학회 논문지
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    • 제11권6호
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    • pp.123-132
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    • 2012
  • 가스센서는 그 용도에 따라서, 자동차용(배출가스, 연료혼합 가스, 산소, 분진), 농수산 식품산업용(신선도, 저장, $CO_2$, 습도, $NH_3$, 질소산화물 가스, 유기가스, 농약 및 살충제로부터 방출되는 유독가스), 산업 의료용(석유화학제품 가스, 수소, 산소, 유독가스), 군사용(화학무기 가스), 환경 측정용(CO를 비롯한 황과 질소 등으로 구성된 대기오염가스), 가정용(LNG, LPG, 부탄, 실내공기, 습도) 등으로 매우 다양하게 사용하고 있다. 산업 현장의 유해물질 종류는 약 700종으로 알려져 있으며 이들 중 대다수의 물질은 일반적인 환경 조건에서 가스 형태로 존재한다. 본 연구에서는 이러한 유독 가스들 중에서 차량 내부 등의 밀폐된 공간에서 발생하기 쉬운 중요한 탄소(CO), 이산화탄소($CO_2$), 암모니아 ($NH_3$)의 세 가지 가스를 검출하는 휴대용 가스센서 모듈을 구현하고자 한다. 유독 가스 중에서도 가장 인명 사고의 중요한 요소인 NH3, $CO_2$, CO의 3종류 가스를 검출하는 다중 가스검출 센서에 대해 연구한다.

루테늄이 첨가된 텅스텐 산화물을 이용한 마이크로 가스 센서의 암모니아 가스 감지 특성 (Gas Sensing Characteristics of Ru doped-WO3 Micro Gas Sensors)

  • 이회중;윤진호;김범준;장현덕;김정식
    • 대한금속재료학회지
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    • 제49권5호
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    • pp.395-399
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    • 2011
  • In this study, micro gas sensors for ammonia gas were prepared by adopting MEMS technology and using a sol-gel process. Three types of sensors were prepared via different synthesis routes starting with W sol and Ru sol mixture. This mixture was deposited on a MEMS platform and the platform was subsegueny heated to a temperature of $350^{\circ}C$. The topography and crystal structure of the sensing film were studied using FE-SEM and XRD. The response of the gas sensor to $NH_3$ gas was examined at various operating temperatures and gas concentrations. The sensor response increased almost linearly with gas concentration and the best sensing response was obtained at $333^{\circ}C$ for 5.0 ppm $NH_3$ for the specimen prepared by coating $WO_3$ powders with the Ru sol mixture.

NH3-Air-C3H8 분위기에서 Nitrocarburisng시 형성된 Compound Layer의 조직제어 (Structural Control of the Compound Layers formed during Nitrocarburising in NH3-Air-C3H8 Atmospheres)

  • 김영희;최광웅
    • 열처리공학회지
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    • 제8권4호
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    • pp.289-301
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    • 1995
  • The effect of Air/$C_3H_8$ gas addition on the compound layer growth of steels nitrocarburised in $NH_3+Air+C_3H_8$ mixed gas atmospheres was investigated. It is considered that amount of residual $NH_3$ was varied according to alternation of Air/$C_3H_8$ mixing ratio and volume content. The compound layer formed from nitrocarburising was composed of ${\varepsilon}-Fe_{2-3}$(C, N) and ${\gamma}^{\prime}-Fe_4$(C, N). According as Air/$C_3H_8$ mixing ratio increased, the superficial content of ${\gamma}^{\prime}-Fe_4$(C, N) within the compound layer was increased, at the same time the growth rate of compound layer and porous layer was increased. In the case of alloy steel at the fixed gas composition, the growth rate of compound layer and porous layer was worse than carbon steel and compound layer phase composition structure primarily consisted of E phase. As the carbon content of materials was increasing in the given gas atmospheres, the growth rate of compound layer and porous layer was increased and the superficial content of ${\varepsilon}-Fe_{2-3}$(C, N) within the compound layer was increased.

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질소와 암모니아 존재하에서 1 keV 에너지의 알곤과 수소 이온 조사에 의한 PTFE(polytetrafluoroethylene)의 표면형상 변화연구 (Surface Modification of Polytetrafluoroethylene by 1 keV Argon and Hydrogen Irradiated in Nitrogen and Ammonia Gas Environment)

  • 유대환;김기환;강동엽;김중수;고석근;김현주
    • 한국재료학회지
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    • 제16권6호
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    • pp.367-372
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    • 2006
  • Polytetrafluoroethylene (PTFE) surface was modified for improving hydrophilicity by ion irradiation in environmental gas of $N_2$ and $NH_3$, respectively. The water contact angle onto the PTFE surface increased from $104{\circ}$ to over $140{\circ}$ by Ar ion irradiation in $N_2$ gas. In the case of $NH_3$ as environmental gas, there were a slight increase of contact angle from ion dose of $1{\times}10^{15}\;to\;5{\times}10^{15}\;ions/cm^2$, and its dramatic decrease to the value of 35o at the conditions of ion dose higher than $1{\times}10^{16}\;ions/cm^2$. It was found from SEM results that the surface morphology of PTFE was changed into one with filament structure after Ar ion irradiation in $N_2$ gas environments. On the contrary, Ar ion irradiation in $NH_3$ gas condition induced the PTFE surface with network structure. Hydrogen ion irradiation resulted in a little change of PTFE surface morphology, comparing with the case of Ar ion irradiation. The water contact angle of hydrogen ion irradiated PTFE surface in reactive gas decreased with increment of ion dose. Hydrogen ion irradiation could improve hydrophilicity with little change of surface morphology. It might be considered from FT-IR results that the improvement in wettability of PTFE surface by ion irradiation in $N_2$ and $NH_3$ gases could be due to the hydrophilic groups of NHx bonds.

$BCl3-NH3-Ar$계의 플라즈마화학증착공정을 이용한 질화붕소막의 합성 (Synthesis of Boron-Nitride Film by Plasma Assisted Chemical Vapor Deposition Using $BCl3-NH3-Ar$ Mixed Gas)

  • 박범수;백영준;은광용
    • 한국세라믹학회지
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    • 제34권3호
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    • pp.249-256
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    • 1997
  • 100-500KHz범위의 주파수전원을 인가하여 발생한 플라즈마를 이용하여 질화붕소(boron nitride)막의 합성시 육방정상(hexagonal phase)과 입방정상(cubic phase)의 생성거동을 관찰하였다. BCl3와 NH3를 붕소와 질소의 공급기체로 선택하였고 Ar과 수소를 carrier기체로 사용하였다. 합성변수로는 플라즈마전원의 전압, 기판의 bias, 합성압력, 기체의 조성, 기판의 온도이었는데, 합성된 박막은 FT-IR결과로부터 육방정과 입방정의 혼합상으로 나타났고, 각 상의 분률은 변수의 크기에 의존하였다. TEM분석결과 육방정으로만 구성된 박막은 비정질상으로 이루어졌으며, 입방정과 육방정의 혼합상의 경우는 비정질기지상에 수십 nanometer크기의 입방정입자가 분산된 구조를 하고 있었다.

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플라즈마 강화 원자층 증착법에 의한 TaNx 박막의 전기 전도도 조절 (Electrical Conductivity Modulation in TaNx Films Grown by Plasma Enhanced Atomic Layer Deposition)

  • 류성연;최병준
    • 한국재료학회지
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    • 제28권4호
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    • pp.241-246
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    • 2018
  • $TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

상업용 퇴비화를 위한 연속 통기식 파이로트 규모 반응조의 퇴비화 특성 (Composting Characteristics of a Continuous Aerated Pilot-scale Reactor Vessel for Commercial Composting)

  • 홍지형;최병민
    • 한국축산시설환경학회지
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    • 제4권2호
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    • pp.149-160
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    • 1998
  • Hog manure slurry amended with sawdust was composted in pilot-scale reactor vessels using continuous aeration nuder different C/N ratios and pH conditions during composting high rate (decomposition) process. For each material two replicated piles were built and monitored over a period of three weeks. The compost piles had an initial volume of 0.18 ㎥. In this study we evaluated the temperature in compost O2 and CO2 evolution, aeration rate, NH3 concentration etc. and investigated the stability of compost during composting high rate process. According to measured results, while the maximum NH3 concentration during composting high rate process. According to measured results, while the maximum NH3 concentration during composting high rate was in the range of 213 to 412 ppm on 5th day which was near the optimum C/N(22∼24) and pH(7.5∼7.9). And then, the NH3 concentration reduced to between 22∼26 ppm by 13th day. The maximum NH3 concentration for the lower C/N(18∼19) and pH value of 6 reached 574∼1,063 ppm by the 16th through 11th days and the NH3 concentration during continuous aerated composting high rate process, it was more important to manage NH3 gas so that compost odor is reduced.

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$NH_3$ Gas Sensor Based on ZnO Nanowires as Sensing Material

  • 노임준;신백균
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.378-379
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    • 2012
  • ITO 만큼 높은 전도성과 광학적 투과성을 갖는 Al-doped ZnO (AZO) 박막을 DC-Pulse magnetron sputtering을 이용하여 40 nm 두께로 증착 후 리소그라피 공정을 통해 $30{\mu}m$ 간격으로 패터닝 하였다. 간격 30 ${\mu}m$로 배열된 AZO를 촉매층으로 하는 수열합성법을 리사이클 공정을 반복하여 수행하여 ZnO 나노선을 성장시켰다. 이와 같이 AZO 전극 사이에 길이 $30{\mu}m$의 ZnO 나노선이 래터럴 구조로 연결된 소자의 $NH_3$ 가스감지 특성을 조사하였다. 합성된 나노선의 전기적, 광학적, 구조적인 특성을 분석하여 높은 가스 감지도를 예상할 수 있는 특성을 확인하였다. 제작된 가스센서를 진공 챔버에 설치 후 양 전극간에 동작전압(Operating voltage)을 1 V로 인가하여 고정한 후에 $NH_3$를 주입(Injection)과 퍼지(Purge)를 반복하며 그 주입량(10 ppm, 20 ppm, 40 ppm, 60 ppm)에 변화를 주었고, 그에 따른 전류변화를 관찰하여 $NH_3$ 가스감지특성을 평가하였다.

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배연탈질설비의 성능향상을 휘한 가스혼합에 관한 연구 (A Study on the Flue Gas Mixing for the Performance Improvement of De-NOx plant)

  • 류병남
    • Journal of Advanced Marine Engineering and Technology
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    • 제23권4호
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    • pp.462-472
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    • 1999
  • De-NOx facility using Selective Catalytic Reduction method is the most widely applied one that removes NOx from flue gas emitted from combustion facility such as boiler for power generation engine incinerator etc. Reductant $NH_3\;or\;NH_4OH$ is sprayed into flue gas to convert NOx into $H_2O$ and $N_2.$ Good mixing between flue gas and $NH_3$ is the most important factor to increase reduction in catalytic layer and to reduce unreacted NH3 slip. Therefore the development of mixer device for mixing effect is one of the important part for SCR facility. Objectives of this study are to investigate the relation between flow and concentration field by observation at the wake of delta-wing type mixer. At the first stage qualitative measurement of flow field is conducted by flow visualization using laser light sheet in lab. scale wind tunnel. Also we have conducted the quantitative analysis by comparing flow field measurement using LDV with numerical simulation. On the basis of qualitative and quantitative analysis we investigate the dis-tribution of flow and concentration in flow model facility. The results of an experimental and compu-tational examination of the vortex structures shed from delta wing type vortex generator having $40^{\circ}$ angle of attack are presented, The effects of vortex structure on the gas mixing is discussed, too.

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Atomic Layer Epitaxy 법에 의한 TiN 박막의 성장과 그 특성 (Growth and Characteristics of TiN Thin Films by Atomic Layer Epitaxy)

  • 이종화;김동진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.581-584
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    • 1998
  • TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

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