• 열처리공학회지
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• 제13권5호
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• pp.337-345
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• 2000

As a case hardening process for stainless steels, nitriding is more preferred and widely used than carburizing which deterioates corrosion resistance severely. In order to add the nitrogen into the stainless steels, passive film on the surface must be removed effectively before nitriding. Conventional gas nitriding process is performed in the temperature range of 500 to $600^{\circ}C$ with $NH_3$ gas, which often leads to sensitization of stainless steels. In this study, we tried to activate passive film of austenitic stainless steels by heating at low pressure. ($900^{\circ}C$, $5{\times}10^{-2}$ Torr.) Nitriding was performed at the solution treatment temperature of $1100^{\circ}C$ with nitrogen molecules instead of $NH_3$ gas. An attainable nitrogen content in a case depends on the nitrogen gas pressure at constant nitriding temperature. A case depth is proportional to the square root of solution time, which suggests that inward diffusion of nitrogen follows the Fick's 2nd law. Surface nitrogen atoms are dissolved as interstitial solutes, or precipitated in the form of MN, $M_2N$ nitrides, which increase the case hardeness. Dissolved nitrogen in the case enhances the cavitation resistance of austenitic stainless steels dramatically.

• 전자공학회논문지SC
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• 제43권4호
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• pp.21-29
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• 2006

본 논문에서는 혼합가스의 종류를 구분하고 농도를 추정하기 위하여 퍼지 ARTMAP 신경회로망과 퍼지 ART 신경회로망을 각각 사용하였다. 온도변환 구동방식의 반도체식 가스센서를 이용하여 $NH_3,\;H_2S$, 그리고 그들의 혼합가스에 대해서 데이터를 획득하였고, 데이터들을 제안한 패턴인식방법의 입력으로 사용하기 위해서 전 처리 과정을 통해 데이터들의 차원을 줄여주었다. 실험을 통해서 본 논문에서 사용한 방법이 이전의 다른 방법들과 비교하여 학습시간을 줄이면서 좀더 안정된 농도 추정 성능을 보여줌을 확인하였다.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• 대한환경공학회지
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• 제30권12호
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• pp.1287-1293
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• 2008

기존의 연구에서 널리 사용된 흡수제 2-amino-2-methyl-1-propanol (AMP)의 성능 개선을 위해 carbon dioxide (CO$_2$) 및 nitrogen dioxide (NO$_2$)의 흡수율이 우수한 ammonia (NH$_3$)를 첨가하여 평면교반조에서 CO$_2$, NO$_2$ 및 CO$_2$/NO$_2$의 흡수속도실험을 수행함으로써 반응속도상수를 AMP 단일흡수제와 비교하였다. 30 wt.% AMP에 1, 3, 5 wt.%의 NH$_3$ 첨가에 따라 흡수속도는 대표적으로 303 K, 1 kPa NO$_2$ 분압에서 12.6$\sim$32.6% 증가되므로 NH$_3$의 첨가로 반응속도를 향상시켜 공정 효율의 증가를 기대할 수 있을 것으로 예상된다. 또한 30 wt.% AMP에 3 wt.% NH$_3$ 첨가 수용액의 NO$_2$ 분압 1 kPa과 CO$_2$ 분압 15 kPa에서 CO$_2$/NO$_2$ 동시 흡수속도는 5.50$\sim$6.40$\times$10$^{-6}$ kmol m$^{-2}$ s$^{-1}$로 NH$_3$의 CO$_2$ 및 NO$_2$에 대한 높은 부하능 및 추가 반응에 기인하여 AMP 단일수용액에 비해 48.2$\sim$41.6% 증가하였다. 또한, 화력발전소에서 배출되는 연소배가스 조성과 같이 CO$_2$ 15 kPa 및 NO$_2$의 비교적 낮은 분압(1 kPa) 조건에서 NO$_2$는 AMP에 NH$_3$ 첨가에 따라 약 2배의 빠른 반응으로 CO$_2$의 흡수에 큰 영향 없이 NO$_2$를 동시에 흡수할 수 있을 것으로 기대된다.

• 한국축산시설환경학회지
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• 제4권2호
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• pp.161-166
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• 1998

Controlling malodor originating from livestock feces has become a major issue, due to its influence on the health of man and livestock, together with its influences on atmospheric pollution. In this study, Five types of biofilters filled with saw-dust, night soil, fermented compost, leaf mold and a mixture(a compound of night soil, fermented compost and leaf mold at the same rates, respectively) were manufactured and tested. To study the effect of the biofilter on reducing malodor in a composting facility and swine building, a pilot scale composting facility enclosed with polyethylene film was constructed. Swine feces was composted in the facility and malodorous gas generated from the decomposition of organic matter in the feces was gathered by vacuum pump. Each biofilter achieved 87∼96% NH3 removal efficiency. This performance was maintained throughout 10 days of operation. The highest NH3 removal efficiency was achieved by leaf mold on the first day of operation period. It reduced the concentration of NH3 by about 96%. Night soil and fermented compost showed nearly equal performance of 93 to 94% for 10 days from the beginning of operation. The mixture achieved the lowest NH3 removal efficiency. It reduced NH3 concentration by about 89∼94% for 10 days from the beginning of operation. However NH3 removal efficiency of each biofilter declined with the passage of operational time. After 30 days from the beginning of operation, NH3 removal efficiency of each biofilter of each biofilter was below 60%, respectively. The concentration of H2S and CH3-SH originating from compost were equal to or less than 5mg/l and 3mg/l, respectively. After passing throughout the biofilter, the concentration of H2S and CH3-SH were not detected.

• 환경위생공학
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• 제16권2호
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• pp.17-23
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• 2001

The objective of this study was to investigate the component ratio of gas generated at closed GD landfill site in MY city and the decomposition status of landfill gas, and was to examine and analyze the properties of the landfill gas. In addition, to provide basic data required to stabilize landfill earlier in the future, the study was to measure gas by landfill gas gauge and to analyze the properties of landfill gas based on documents. As a result of analyzing the properties, acquired follow results. 1. The main elements of landfill gas, $CH_4$ and $CO_2$ were respectively 25.02% and 22.325 on the average. 2. $NH_3$ and $H_2S$ were respectively 1.07 4.97 and 0.75 1.15 on the average. 3. Generated gas was different depending on water, pH properties of MSW(Munticipal Solid Wastes) and their decomposition rate. Furthermore, when measured the temperature of room to inspect landfill gas, the temperature was $22{\;}-{\;}30^{\circ}C$ in the average.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.13-18
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• 2001

본 연구에서 RF 플라즈마를 이용한 촉매 화학기상증착법에 의하여 탄소나노튜브를 성장시켰다. 탄소나노튜브는 Ni이 증착된 강화 유리 기판위에 $600^{\circ}C$ 이하의 공정 온도에서 성장되었으며, 성장시 성장 온도와 에칭 시간 그리고 Ni 층의 두메에 따라 탄소나노튜브 성장 특성이 다양하게 나타났다. Ni이 증착된 강화 유리기판위에 탄소나노튜브를 성장시키기 위하여 에칭 가스로는 $H_2$와 $NH_3$가스를 사용하였고, 탄소 원료로 $C_2H_2$가스를 사용하였다. 수직 배향된 탄소나노튜브의 직경과 길이는 약 150 nm와 3 $\mu\textrm{m}$ 정도의 크기로 성장되었다. 촉매 화학기상증착법을 이용하여 성장된 탄소나노튜브는 FED의 에미터로 사용이 기대된다.

• 한국결정성장학회지
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• 제8권3호
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• pp.387-387
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• 1998

본 연구에서는 기상화학 증착법으로 성장되는 GaN 후막에 대한 열역학적 전사모사를 수행하고 이를 실험결과와 비교, 검토하였다. 열역학적계산은 화학양론적 연산방식을 이용하여 수치 해석하였으며, 모사의 변수로써 온도범위는 400∼1500K, 기상비율은 $(GaCl_3)/[GaCl_3+NH_3],(N_2)/(GaCl_3+NH_3)$를 취하였다. GaN의 성장온도 범위는 이론적인 계산이 실험결과보다 훨씬 낮은 450∼750K으로 예측되었다. 성장온도에서 모사결과와 실험결과와의 차이는 GaN의 기상 에픽텍시 성장이 박막성장의 높은 활성화 에너지 때문에 반응속도론적으로 국한된 영역 내에서 발생한다는 것을 나타낸다.

• 한국결정성장학회지
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• 제8권3호
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• pp.388-395
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• 1998

본 연구에서는 기상화학 증착법으로 성장되는 GaN 후막에 대한 열역학적 전사모사를 수행하고 이를 실험결과와 비교, 검토하였다. 열역학적계산은 화학양론적 연산방식을 이용하여 수치 해석하였으며, 모사의 변수로써 온도범위는 400~1500K, 기상비율은 $(GaCl_3)/[GaCl_3+NH_3],(N_2)/(GaCl_3+NH_3)$를 취하였다. GaN의 성장온도 범위는 이론적인 계산이 실험결과보다 훨씬 낮은 450~750K으로 예측되었다. 성장온도에서 모사결과와 실험결과와의 차이는 GaN의 기상 에픽텍시 성장이 박막성장의 높은 활성화 에너지 때문에 반응속도론적으로 국한된 영역 내에서 발생한다는 것을 나타낸다.