• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.589-597
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• 2010

In the present study, the effect of variation in alloying elements on the carbide formation behavior during casting and homogenization treatment of M2 high speed steels was investigated. M2 high speed steels of various compositions were produced by vacuum induction melting. Contents of C, Cr, W, Mo, and V were varied from the basic composition of 0.8C, 0.3Si, 0.2Mn, 4.0Cr, 6.0W, 5.0Mo, and 2.0V in weight percent. Homogenization treatment at $1150^{\circ}C$ for 1.5 hr followed by furnace cooling was performed on the ingots. Area fraction and chemical compositions of eutectic carbide in as-cast and homogenized ingots were analyzed. Area fraction of eutectic carbide appeared to be higher in the ingots with higher contents of alloying elements the area fraction of eutectic carbide also appeared to be higher on the surface regions than in the center regions of ingots. As a result of the homogenization treatment, $M_2C$ carbide, which was the primary eutectic carbide in the as-cast ingots, decomposed into thermodynamically stable carbides, MC and $M_6C$. The latter carbide was found to be the main one after homogenization. Fine carbides uniformly distributed in the matrix was found to be MC type carbide and coarsened by homogenization.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.275-280
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• 2005

The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of $175-350^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors. A self-limiting growth of $0.6\AA/cycle$ was achieved at the substrate temperature of $240-280^{\circ}C$. The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at $300^{\circ}C$ was almost stoichiometric. Electrical measurements performed on $MoW/HfO_2$(20 nm)/Si MOS structures exhibited high dielectric constant$(\~17)$ and a remarkably low leakage current density of at an applied field of $1.5-6.2\times10^{-7}A/cm^2$ MV/cm, probably due to the stoichiometry of the films.