• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.187-194
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• 1990

Effects of MnO2 addition ranged from 0.0wt% to 5.0wt% on the microstructure and dielectric and piezoelectric properties of the Pb(Zr0.52 Ti0.48)O3 Ceramics have been investigated. The solubility limit of MnO2 in Pb(Zr0.52 Ti0.48)O3 is about 0.5wt%, and MnO2 as a valence state of Mn3+ is substituted for (Zr, Ti) lattice site in PZT solid-solution. The addition of MnO2 up to 0.5wt% in Pb(Zr0.52 Ti0.48)O3 brings increase of density, but decreased of grain size and tetragonality. Dielectric constant slightly decreases, but both coupling factor(Kp) and mechanical quality factor(Qm) increase with the addition of MnO2. However, excess amount of MnO2 addition more than 0.75wt% results in rapid decrease of resistance. Dielectric constant and tan $\delta$ increase due to the second phase and inhomogeneous Mn distribution.

• Journal of Korea Foundry Society
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• v.33 no.2
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• pp.55-62
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• 2013

Effect of Fe and Mn contents on the castability of Al-4wt%Mg-0.9wt%Si system alloy has been studied. According to the analysis of cooling curve for Al-4wt%Mg-0.9wt%Si-0.3wt%Fe-0.3/0.5wt%Mn alloy, ${\alpha}-Al_{15}(Fe,Mn)_3Si_2$ and ${\beta}-Al_5FeSi$ phases crystallized above eutectic temperature of $Mg_2Si$. Therefore, these phases affected both the fluidity and shrinkage behaviors of the alloy during solidification. As Fe and Mn contents of Al-4wt%Mg-0.9wt%Si system alloy increased from 0.1 wt% to 0.4 wt% and from 0.3 wt% to 0.5 wt% respectively, the fluidity of the alloy decreased by 26% and 33%. When Fe content of the alloy increased from 0.1 wt% to 0.4 wt%, 23% decrease of macro shrinkage and 19% increase of micro shrinkage appeared. Similarly, Mn content of the alloy increased from 0.3 wt% to 0.5 wt%, 11% decrease of macro shrinkage and 14% increase of micro shrinkage appeared. Judging from the castability of the alloy, Al-4wt%Mg-0.9wt%Si alloy with low content of Fe and Mn, 0.1 wt% Fe and 0.3 wt% Mn, is recommendable.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.246-251
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• 2001

The $[(Pb_{1-x}$La_{2x/3})TiO_3$, X=0.2] powder was synthesized by the hydrothermal method, and their sintering and dielectric properties according to Mn additive were examined. The relative density of sintered PLT specimen at $1150^{\circ}C$ for 5 hrs with Mn 0.02 mol% additive was 96.7%. The dielectric properties of sintered PLT specimen were changed by content of Mn and increacement of sintering temperature. Dissipation factor was improved by increasing of measuring temperature. Curie temperature of sintered PLT specimens was decreased with increasing of Mn additive.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.145-150
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• 1999

Gd1-xSrxMnO3(0$\leq$X$\leq$0.6) as the cathode for solid oxide fuel cell was synthesized by citrate process and studied for its crystal structure, electrical conductivity, thermal expansion coefficient (TEC), and investigated reactivity with 8 mol% yttria stabilized zirconia(8YSZ) or Ce0.8Gd0.2O1.9 (CGO). The crystal structure of Gd1-xSrxMnO3 changed from orthorhombic (0$\leq$X$\leq$0.3) through cubic (0.4$\leq$X$\leq$0.5) to tetragonal structure (X=0.6). When Sr contents was increased, the electrical conductivity of Gd1-xSrxMnO3 was inthose of La1-xSrxMnO3, 8YSZ and CGO if Sr content was above 30mol%. TEC of Gd1-xSrxMnO3 was increased with Sr content. After heat treatment at 1300$^{\circ}C$ for 48 hours, reaction product of Gd1-xSrxMnO3 and 8YSZ was SrZrO3. However CGO had no reaction product with Gd1-xSrxMnO3.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.981-986
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• 2000

Er(NO$_3$)$_3$.5$H_2O$, Mn($CH_3$$CO_2$)$_2$.4$H_2O$를 출발원료로 사용하여 졸-겔법으로 제조한 ErMnO$_3$박막의 열처리 온도 및 기판 배향성에 따른 박막 배향성과 누설 전류 특성에 관하여 연구하였다. ErMnO$_3$박막은 75$0^{\circ}C$ 이하의 온도에서 1시간 열처리 시비정질상태였으나, 78$0^{\circ}C$ 이상의 온도에서 hexagonal pahse인 ErMnO$_3$로 결정화되었다. 열처리 온도가 증가할수록 기판 배향성과 무관하게 모든 방향으로 결정이 성장함을 알 수 있었다. 결정화 정도와 결정 성장 축에 따라 누설 전류 값이 변화함을 알 수 있었고, 80$0^{\circ}C$에서 열처리한 시편에서는 누설 전류 변화가 비선형적인 경향으로 증가하였으며, $10^{-5}$ A/$ extrm{cm}^2$ 이하로 유지되었다.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2974-2978
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• 2014

$Mn_3O_4$/multi-walled carbon nanotube (MWCNT) composites are prepared by chemically synthesizing $Mn_3O_4$ nanoparticles on a MWCNT film at room temperature. Structural and morphological characterization has been carried out using X-ray diffraction (XRD) and scanning and transmission electron microscopies (SEM and TEM). These reveal that polycrystalline $Mn_3O_4$ nanoparticles, with sizes of about 10-20 nm, aggregate to form larger nanoparticles (50-200 nm), and the $Mn_3O_4$ nanoparticles are attached inhomogeneously on MWCNTs. The electrochemical behavior of the composites is analyzed by cyclic voltammetry experiment. The $Mn_3O_4$/MWCNT composite exhibits a specific capacitance of $257Fg^{-1}$ at a scan rate of $5mVs^{-1}$, which is about 3.5 times higher than that of the pure $Mn_3O_4$. Cycle-life tests show that the specific capacitance of the $Mn_3O_4$/MWCNT composite is stable up to 1000 cycles with about 85% capacitance retention, which is better than the pure $Mn_3O_4$ electrode. The improved supercapacitive performance of the $Mn_3O_4$/MWCNT composite electrode can be attributed to the synergistic effects of the $Mn_3O_4$ nanoparticles and the MWCNTs, which arises not only from the combination of pseudocapacitance from $Mn_3O_4$ nanoparticles and electric double layer capacitance from the MWCNTs but also from the increased surface area, pore volume and conducting property of the MWCNT network.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.166-172
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• 1999

The magnetic properties between Mn-Ir antiferromagnetic layer and Ni-Fe ferromagnetic layer have been investigated in Mn-Ir/Ni-Fe/Zr on Si wafer formed by magnetron sputtering. Mn-Ir was sputtered from Ir chips and Mn target using D.C. power, Ni-Fe and Zr were deposited from Ni-Fe and Zr targets using D.C. power under Ar atmosphere. We studied the dependence of the magnetic properties on Ir content of Mn-Ir layer for Mn-Ir/Ni-Fe bilayer, and obtained the highest $H_ex$ of 219 Oe and the low $H_c$ of 30 Oe. And then focused on the effect of base pressure for Mn-Ir containing multilayers. Our experimental data showed that if the base pressure is higher than $3.0{\times}10^{-6}\;Torr$, the exchange anisotropy of Mn-Ir/Ni-Fe/Zr disappeared probably due to the grain refining of Mn-Ir film. In addition we have studied the dependence of Zr buffer on magnetic properties of Mn-Ir/Ni-Fe/Zr multilayers, and observed that Zr buffer about (111) texture and lower $H_c$ of Mn-Ir/Ni-Fe/Zr multilayer.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1174-1179
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• 2001

Mn-Co-Ni oxide system has been used as the NTC thermistors for normal temperature applications. Mn-Co-Ni oxide-based thermistors with various compositions were sintered at 1250$^{\circ}C$ for 3 hours and then maintained at 1000$^{\circ}C$ for 3 hours. The electrical properties of the thermistors fabricated were measured. In particular the MCN622 composition (Mn$_3$O$_4$60 wt%, Co$_3$O$_4$20 wt%, NiO 20wt%) exhibited the lowest resistivity and relatively high B constant. The MCN721 composition (Mn$_3$O$_4$70wt%, Co$_3$O$_4$20wt%, NiO 10 wt%) showed the higher resistivity than any other compositions. The aging properties of each composition showed comparatively stable characteristics within ${\pm}$2%.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.394-399
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• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.