• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.318-322
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• 2007

The high electrical conductivity Cu-0.15% Sn alloys containing various P contents, and the high conductivity and high strength Cu-0.1% Sn-0.1%Ag alloys with various Mg/P additions were fabricated and their mechanical properties and electrical conductivity were investigated. The electrical conductivity was generally decreased as the P content was increased where as the hardness and strength was shown to increase. When Mg was added to P-containing Cu alloys, the detrimental effect of P on the conductivity was significantly reduced, and TEM observations indicated that the formation of $Mg_3P_2$ phase is responsible for this result.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.150-150
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• 2012

본 연구는 1차원 나노 구조의 합성과 기초적 분석에 관한 연구로써 특히 무기 산화물 나노재료를 그 대상으로 하였다. 내용으로는 첫째, 1차원 코어 나노와이어의 합성을 하였고 Thermal evaporation, substrate의 가열, 그리고 MOCVD 를 사용한 결과들을 나열한다. 둘째, 코어-쉘 나노와이어를 제작하기 위하여 특히 쉘층의 제작방법을 연구하였는데 PECVD, ALD, 그리고 sputtering에 의한 결과들을 나열하고 간단히 설명한다. Thermal evaporation에 의한 1차원 나노와이어 합성의 경우는 MgO의 예를 들었는데 MgO 나노와이어는 Au가 증착된 기판을 열처리하여 Au dot를 형성하고 이의 morphology를 조절하여 최적의 나노와이어 합성조건을 선정하였다. 이로써 기판 morphology가 나노선의 성장및 형상에 영향을 준다는 사실을 알게 되었다. 이 사실은 In2O3기판을 사용하고 이의 표면거칠기를 열처리로 조절하므로써 역시 나노와이어의 성장을 촉진하는 방법을 찾아내었다. 또한 thermal evaporation공법은 source분말의 선택에 따라 다양한 소재를 제작가능하다는 결과를 제시하였다. 예를 들면 SiOx 층이 precoating된 chamber내에서 MgO 나노선을 합성하는 것과 동일한 조건으로 실험을 진행하면 Mg2SiO4 나노와이어가 형성된 것을 확인하였다. 또한 Sn과 MgB2 분말을 함께 적용할 경우 Sn tip을 가진 MgO 나노와이어를 얻을 수 있었다. 이는 Sn이 동시에 촉매의 역할을 하였기 때문일 것으로 추정된다. 한편 Sn과 Bi 혼합분말을 적용한 경우 Bi2Sn2O7 신소재 tip을 포함한 SnO2 나노와이어를 얻을 수 있었다. 이 경우 Bi원자가 적절한 촉매의 역할을 수행한 것으로 사료된다. Substrate의 가열공법에서는 Si wafer상에 각종 금속 즉 Au, Ag, Cu, Co, Mo, W, Pt, Pd등 초박막을 DC sputter 로 형성한후 annealing하는 기술을 사용하였다. 특기할 만한 것은 Co를 사용한 경우 나노와이어의 spring구조를 얻을 수 있었다는 점이다. MOCVD에 의하여는 Ga2O3및 Bi2O3 나노와이어를 비교적 저온에서 합성하였고 In2O3의 경우는 독특한 나노구조를 형성하였고 이의 결정학적 특성에 대하여 조사하였다.

• Korean Journal of Materials Research
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• v.32 no.3
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• pp.132-138
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• 2022

Zintl phase Mg₃Sb₂ is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg₃Sb₂ has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg₃Sb₂ was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg₃Sb₂ was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg_3.8Sb_2-xSn_x (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg_3.8Sb_1.994Sn_0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of Korea Foundry Society
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• v.28 no.5
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• pp.221-225
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• 2008

The structural and hardness variations of Mg-5Sn-(1,2,3) Ca (wt%) alloys have been investigated during various aging heat treatments followed by solution heat treatment at $500^{\circ}C$ for 24 hrs. Maximum hardness of Hv61 has been obtained for Mg-5Sn-3Ca alloys, when the aging treatment was performed at $200^{\circ}C$ for 24 hrs. The microstructures were critically changed when the content of Ca was more than 1wt%, since CaMgSn and $Mg_{2}Ca$ phases were mainly precipitated during aging treatments. The hardness variations with structural evolutions are discussed with respect to the aging temperatures and times.

• Korean Journal of Materials Research
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• v.20 no.2
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• pp.65-71
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• 2010

In this study, the effect of Sn and Mg on microstructure and mechanical properties of Cu-Fe-P alloy were investigated by using scanning electron microscope, transmission electron microscope, tensile strength, electrical conductivity, thermal softening, size and distribution of the precipitation phases in order to satisfy characteristic for lead frame material. It was observed that Cu-0.14wt%Fe-0.03wt%P-0.05wt%Si-0.1wt%Zn with Sn and Mg indicates increasing tensile strength compare with PMC90 since Sn restrained the growth of the Fe-P precipitation phase on the matrix. However, the electrical conductivity was decreased by adding addition of Sn and Mg because Sn was dispersed on the matrix and restrained the growth of the Fe-P precipitation. The size of 100 nm $Mg_3P_2$ precipitation phase was observed having lattice parameter $a:12.01{\AA}$ such that [111] zone axis. According to the results of the study, the tensile strength and the electrical conductivity satisfied the requirements of lead frame; so, there is the possibility of application as a substitution material for lead frame of Cu alloy.

• Journal of Power System Engineering
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• v.18 no.6
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• pp.146-152
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• 2014

Mg-Sn nanoparticles were prepared by an arc-discharge method in a mixture atmosphere of argon and hydrogen gases. Phases, morphologies, and microstructures of the nanoparticles were investigated by means of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found that the intermetallic compound of $Mg_2Sn$ was generated and coexisted with metallic phases of Mg and Sn within nanoparticles. Basedon the model cell, the electrochemical properties were also explored by discharge-charge cycling, cyclic voltammetry, and electrochemical impedance spectroscopy. The initial capacity of the first cycle reached 430 mAh/g. Two visible plateaus at 0.2-0.3 and 0.5-0.75V were observed in the potential profiles, which can attributed to alloying/de-alloying reactions between Li and Mg2Sn, respectively.

• Journal of Korea Foundry Society
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• v.37 no.4
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• pp.101-107
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• 2017

This study investigated the effect of Pd on the microstructure, tensile and creep properties of Mg-4Al-2Sn (AT42) alloy at a high temperature for transportation-related industrial applications. AT42-xPd (x = 0, 1 and 2 wt. %) alloys were prepared using a permanent mould casting method. The microstructures of the as-cast alloys were characterized by the presence of the intermetallic phases $Mg_{17}Al_{12}$, $Mg_2Sn$ and $Al_4Pd$. The addition of Pd was found to improve the tensile properties of AT42 at room and at elevated temperatures, and to increase the creep resistance at elevated temperatures. A small amount of Pd could markedly improve the tensile properties of AT42 by means of grain-refinement and the dispersion of secondary phase strengthening. Moreover, the thermally stable phase $Al_4Pd$ effectively improves the creep resistance of AT42 due to the strengthened grain boundaries and the suppressed formation of $Mg_{17}Al_{12}$.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.169-170
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• 2008

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_8$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of SnO addition, the bulk density and dielectric constant were increased but quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+xwt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with 2.5wt% addition of SnO sintered at $830^{\circ}C$ for 1hr were 29.86, 35,800 GHz, -0.58 ppm/$^{\circ}C$, respectively.

• Resources Recycling
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• v.30 no.2
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• pp.24-30
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• 2021

Dismantling tests were performed to separate components from waste printed circuit boards (PCBs) using HCl solution with Sn4+. Then, the effects of agitation speed, reaction temperature, initial Sn4+ concentration, and HCl concentration on the dismantling of components were investigated. No significant effect on the dismantling speed was observed upon changing the agitation speed from 100 to 300 rpm. However, the dismantling rate increased with increasing reaction temperature, Sn4+ concentration, and HCl concentration. In the all-component dismantling tests, when the dismantling ratio increased to 100%, no solder was observed on the boards, and the Sn4+ concentration was ~1,500 mg/L. The dismantling ratio of the components from the PCB increased to 100% within 2 h when 1 mol/L HCl solution with 10,000 mg/L Sn4+ was used at an agitation speed and temperature of 200 rpm and 90 ℃, respectively.