• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.179-185
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• 1998

Mg2SiO4 열형광체에 란탄계 금속 Tb, Tm, La, Ho, Dy 및 Nd를 활성체로 첨가하여 열형광체를 제작했으며, Peak shape법으로 활성화에너지를 계산한 결과 0.53-1.77eV였으며, 발광과정의 차수는 전부 2차였다. 저 에너지 X-선에 대해 매우 높은 감도를 나타내었으므로 방사선 센서 소자로 개발하기 위한 기초 자료가 될 것이다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Journal of Korea Foundry Society
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• v.13 no.6
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• pp.524-531
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• 1993

Dispersion behaviors of SiC particles and microstructures in Al-2%Si/SiCp composite prepared by Rheo-compocasting were studied with change of fabrication conditions(slurry temperature, agitation time) and additions of Mg($0{\sim}3wt.%$). Also, the microhardness change of matrix, interface and total in composites were examined with additions of Mg($0{\sim}3wt.%$). The dispersion of particles in the composites became relatively homogeneous with increase of Mg additions, agitation time and decrease of slurry temperature. Rate of occupied area by particle in matrix was increased as increase of Mg additions due to improvement of wettability between SiC particle and matrix. A favorable composites were obtained by melting under Ar atmospheric SiCp injection and bottom pouring system. According to the analysis of X-ray diffraction, $Mg_2Si$, $Al_4C_3$, $SiO_2$ and MgO, etc, intermetallic compounds were formed by chemical interreaction at interface of matrix and particles. The microhardness of interface is higher than that of matrix due to more strengthening of above intermetallic compounds. It was considered that the total hardness of the composites is improved by dispersing of SiCp and addition of Mg.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.307-312
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• 2009

Motukoreaite and quintinite-3T, Mg-Al layered double hydroxides, were found in the Sinyangri Formation of Jeju Island. They fill the pores of basaltic volcaniclastic sediments in globular and botryoidal aggregates of fine platy particles. Globular aggregates of quintinite-3T were crusted with the parallel overgrowth of motukoreaite plates. X-ray diffraction data and chemical composition are consistent with those reported in literature, while the Mg/Al ratio of motukoreaite is higher. Structural formula of motukoreaite and quintinite-3T derived from electron microprobe analysis are $Na_{1.6}Ca_{0.1}Mg_{40.7}Al_{20.7}Si_{0.9}(CO_3)_{13.6}(SO_4)_{7.4}(OH)_{108}56H_2O$, and $Mg_{3.7}Al_{1.9}Si_{0.2}(OH)_{12}(CO_3)_{0.8}(SO_4)_{0.2}3H_2O$, respectively. Motukoreaite and quintinite-3T were formed by reaction between seawater and basaltic glass, and contributed to the cementation and lithification of the volcaniclastic sediments.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.102.1-102.1
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• 2000

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Journal of the Korean Society of Visualization
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• v.17 no.3
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• pp.59-65
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• 2019

Phosphor particles ((Sr,Mg)₂ SiO₄:Eu²⁺ were suspended in deionized water in quartz cuvette and used for measuring liquid temperature field by using two-color-ratio method. In the temperature range of 23~77℃, it showed the relative error from 2.4% to 4% and the temperature sensitivity of 0.65 %/℃ at 30℃ and 0.95 %/℃ at 77 ℃. This performance is comparable to measurement techniques using thermographic liquid crystal or laser induced fluorescence or other thermographic phosphor particle. Among investigated potential error sources, the particle number density affected the intensity ratio and the temperature, but the effect of laser fluence was not evident.

• Journal of the Mineralogical Society of Korea
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• v.1 no.2
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• pp.94-103
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• 1988

Diamond anvil cell (DAC) interfaced with a YAG laser heating system has been used to study the phase transformations on perovskite structured titanates ($BaTiO_3$, and $PbTiO_3$) and to synthesize the silicate perovskite phase from the orthopyroxenes of $MgSiO_3$ and $(Mg_{0.87},\;Fe_{0.13})SiO_3$. $BaTiO_3$ and $PbTiO_3$ transform from tetragonal phase to cubic at the pressures of approximately 2.6 GPa and 4.0 GPa at room temperature, respectively. Cubic phases of the both show wide range of stability in the extended in-situ high pressures and high temperature regions. Starting orthoenstatite of $MgSiO_3$ has yielded the perovskite phase as the major structure with ilmenite, gamma-spinel, betta-spinel and stishovite phases at ~38 GPa and ${\sim}1,000^{\circ}C$. $(Mg_{0.87},\;Fe_{0.13})SiO_3$ has shown the perovskite as the major phase with betta-spinel, stishovite and enstatite phases at ~35 GPa and ${\sim}1,000^{\circ}C$. The ilmenite phase does not occur at this condition.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.