• 센서학회지
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• 제23권1호
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• 한국통신학회논문지
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• 제17권1호
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• pp.58-67
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• 1992

MgGa2Se4 및 MgGa2Se4 : Co2+단결정을 bridgman 방법으로 성장하여 광흡수와 광발광을 가시광 영역과 근적외선 영역에서 조사하였다. 광흡수 스펙트럼은 MgGa2Se4단결정의 Td Symmetry를 갖는 host lattice에 점유하여 바닥상태와 여기상태의 Co2+ ion 에너지 ㅣlevel간 전자전이에 의해서 760nm, 1640nm, 그리고 2500nm에서 3개의 흡수피크를 관측하였다. 광발광 스펙트럼에서 이 단결정은 가시광 발광ㄸ들을 관찰하였다.가시영역의 발광 band들은 에너지 준위도에서 제안된 바와 같이 자전자대의 우의 꼭대기 acceptor 준위에서 전도대 아래의 밑에 분포된 trap으로부터 끊임없이 전자전에 의한다고 볼수 있다. 한편, 이들은 적외선 발광 band가 deep level에서 acceptor level부터 전자전이에 기인한다고 고려할 수 있다. 광전이의 mechanism은 MgGa2Se4 결정의 에너지 diagram의 항으로 잘 설명되고 있다.

• 대한전자공학회논문지
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• 제25권4호
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• pp.402-406
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• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

• 한국진공학회지
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• 제2권1호
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• pp.65-72
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• 1993

MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

• 한국결정성장학회지
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• 제23권6호
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• pp.283-290
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• 2013

수평 전기로에서 $MgGa_2Se_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $MgGa_2Se_4$ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. $MgGa_2Se_4$단결정 박막의 성장 조건은 증발원의 온도 $610^{\circ}C$, 기판의 온도 $400^{\circ}C$였고 성장 속도는 $0.5{\mu}m/hr$였다. 이때 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 212 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. $MgGa_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293 K에서 10 K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap Eg(T)는 varshni공식에 따라 계산한 결과 $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$이었으며 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting energy ${\Delta}cr$값이 190.6 meV이며 spin-orbit energy ${\Delta}so$값은 118.8 meV임을 확인하였다. 10 K일 때 광전류 봉우리들은 n = 1, 27일때 $A_{1^-}$, $B_{1^-}$와 $C_{27}-exciton$ 봉우리임을 알았다.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국결정성장학회지
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• 제21권3호
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• pp.99-104
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• 2011

단결정 성장을 위한 $MgGa_2Se_4$ 다결정은 수평 전기로에서 합성하였으며, 결정구조는 rhombohedral이고 격자상수 $a_0$는 3.953 ${\AA}$, $c_0$는 38.890 ${\AA}$였다. $MgGa_2Se_4$ 단결정박막은 HWE(Hot Wall Epitaxy) 방법으로 반절연성 GaAs(100)기판에 성장시켰다. 단결정박막의 성장 조건은 증발원의 온도 $610^{\circ}C$, 기판의 온도 $400^{\circ}C$에서 진행되었으며 성장 속도는 0.5 ${\mu}m/h$였다. 단결정박막의 결정성은 이중 결정 x-선 회절곡선의 반폭치와 X-선 회절무늬의 ${\omega}-2{\theta}$로부터 구하여 최적 성장 조건을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $6.21{\times}10^{18}/cm^3$, 248 $cm^2/v{\cdot}s$였다. $MgGa_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수 스펙트럼을 10 K에서 293 K까지 측정하였다. 광흡수 스펙트럼으로부터 구한 에너지 갭 $E_g(T)$는 varshni 공식 $E_g(T)=E_g(0)=({\alpha}T^2/T+{\beta})$을 잘 만족함을 알 수 있었다. 여기서 $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$, ${\beta}=251\;K$였다.

• Applied Microscopy
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• 제25권3호
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• pp.82-89
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• 1995

지금까지의 실험결과에서 다음과 같은 요약할 수 있다. 1) 사원계 $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) 에피층은 다소 불규칙한 성장을 나타내어 역삼각형의 결함과 길고 직선인 적층결함으로 형성된 수지상 형태가 발견되었다. 2)역삼각형 결함은 {111}면에 형성된 적층결함으로 둘러싸여 있고 내부에는 결함이 없으나 계면과 수직인 방향인 <001>방향으로 콘트라스트 차이를 이루는 밴드가 형성되었다. 3) 기판과 정합을 이루고 있고 결함이 없는 ZnSe 버퍼 층이 관찰되었으며 결함 및 므와레 줄무늬는 버퍼층과 4원계 에피층과의 계면에서 형성된다. 4) 4원계 에피층에 형성된 적층결함은 Mg 원소의 효과로 길이가 60nm 이상 폭이 40nm 이상의 넓은 간격을 이루고 있다. 5) 긴 적층결함으로 둘러쌓인 수지상 구조에는 국부적으로 주기를 이루며 강한 콘트라스트 차이를 나타내는 줄무늬가 관찰되는데, 이는 Mg 및 S의 국부적인 화학적 조성차이에 기인한 탄성 변형 효과로 생각된다.

• Journal of Advanced Marine Engineering and Technology
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• 제27권1호
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Journal of Ginseng Research
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• 제43권1호
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• pp.38-48
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• 2019

Background: Interspecific ginseng hybrid, Panax ginseng ${\times}$ Panax quenquifolius (Pgq) has vigorous growth and produces larger roots than its parents. However, F1 progenies are complete male sterile. Plant tissue culture technology can circumvent the issue and propagate the hybrid. Methods: Murashige and Skoog (MS) medium with different concentrations (0, 2, 4, and 6 mg/L) of 2,4-dichlorophenoxyacetic acid (2,4-D) was used for callus induction and somatic embryogenesis (SE). The embryos, after culturing on $GA_3$ supplemented medium, were transferred to hormone free 1/2 Schenk and Hildebrandt (SH) medium. The developed taproots with dormant buds were treated with $GA_3$ to break the bud dormancy, and transferred to soil. Hybrid Pgq plants were verified by random amplified polymorphic DNA (RAPD) and inter simple sequence repeat (ISSR) analyses and by LC-IT-TOF-MS. Results: We conducted a comparative study of somatic embryogenesis (SE) in Pgq and its parents, and attempted to establish the soil transfer of in vitro propagated Pgq tap roots. The Pgq explants showed higher rate of embryogenesis (~56% at 2 mg/L 2,4-D concentration) as well as higher number of embryos per explants (~7 at the same 2,4-D concentration) compared to its either parents. The germinated embryos, after culturing on $GA_3$ supplemented medium, were transferred to hormone free 1/2 SH medium to support the continued growth and kept until nutrient depletion induced senescence (NuDIS) of leaf defoliation occurred (4 months). By that time, thickened tap roots with well-developed lateral roots and dormant buds were obtained. All Pgq tap roots pretreated with 20 mg/L $GA_3$ for at least a week produced new shoots after soil transfer. We selected the discriminatory RAPD and ISSR markers to find the interspecific ginseng hybrid among its parents. The $F_1$ hybrid (Pgq) contained species specific 2 ginsenosides (ginsenoside Rf in P. ginseng and pseudoginsenosides $F_{11}$ in P. quinquefolius), and higher amount of other ginsenosides than its parents. Conclusion: Micropropagation of interspecific hybrid ginseng can give an opportunity for continuous production of plants.