• Progress in Superconductivity and Cryogenics
• /
• v.21 no.3
• /
• pp.18-21
• /
• 2019

We studied the effect of Fe ion irradiation on the upper critical field ($H_{c2}$) of 410 nm single-crystalline $MgB_2$ thin films. The irradiation energy was fixed at 140 keV when we increased the irradiation doses from $1{\times}10^{14}ion/cm^2$ to $4{\times}10^{14}ion/cm^2$. We found that $H_{c2}$ significantly increase with increasing irradiation dose, despite the low irradiation energy. The enhancement of $H_{c2}$ could be explained by the reduction of electron mean free path caused by defects induced from irradiation, leading to a decrease of coherence length (${\xi}$). We also discussed the effect of irradiation on temperature-dependent resistivity in details.

• Journal of the Korean Wood Science and Technology
• /
• v.15 no.4
• /
• pp.12-17
• /
• 1987

To extract arabinogalactan from larch (Larix Leptolepis), chips immersed with water(20-$90^{\circ}C$) for 1hr, were defiberized by refiner. The liquors were recovered and purified to pure arabinogalactan by ion exchange resin(IRC-50 a. IR-45) or MgO. Additionally the optimal condition in purification with MgO was also investigated. 1. The amounts of solids(crude sugars) and pure arabinogalctan in solids are 8.6-11.3% and 7.3-8.5%(raw material = 100), respectively. 2. Phenolic materials in crude sugars are removed up to 96-89% by ion exchange resin and 94-88% by MgO, while recovery yields of pure arabinogalactan are 81-75% on purification with ion exchange resin and 91-87% on purification with MgO. 3. The optimal conditions of purification with MgO are the addition of 35mg MgO/0.5g of crude sugars, 45 minutes at $70^{\circ}C$, or 25 mg MgO, 30 minutes at $85^{\circ}C$.

• Applied Chemistry for Engineering
• /
• v.24 no.4
• /
• pp.423-427
• /
• 2013

This research was carried out to identify the characteristics of the wastewater from coke oven gas (COG) purification process of the coke plant, and derive optimal operating conditions for the treatment of wastewater. The coke plant wastewater contains highly concentrated $S^{-2}$ and $SCN^-$ that are harmful to microorganisms, and their concentrations were 6.8~11.2 mg/L and 190~320 mg/L, respectively. When the $S^{-2}$ ion concentration was lower than 10 mg/L, $SV_{30}$ of active sludge was 280~ 340 mL and the sludge sedimentation velocity was very fast. But, when the $S^{-2}$ ion concentration was higher than 15 mg/L, $SV_{30}$ of the active sludge was 560~680 mL and the sludge sedimentation velocity was very slow. Also when the $SCN^-$ ion concentration was lower than 300 mg/L, $SV_{30}$ of the active sludge was 245~320 mL and the sludge sedimentation velocity was very fast. But, when the $SCN^-$ ion concentration was higher than 400 mg/L, $SV_{30}$ of the active sludge was 470~ 567 mL and the sludge sedimentation velocity was slow. To treat the wastewater generated by COG purification process of the coke plant effectively and to maintain microorganism activities in good conditions, the ion concentration of $S^{-2}$ and $SCN^-$ should be lower than 15 mg/L and 400 mg/L, respectively.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.259-265
• /
• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• Journal of the Korean Ceramic Society
• /
• v.53 no.3
• /
• pp.282-287
• /
• 2016

This study involves enhancing the performance of the $Na(Li,Ti)O_2$ system as an Na-ion battery anode with the addition of Mg, which partially replaces Li ions. We perform both computational and experimental approaches to achieve a higher reversible capacity and a faster transport of Na ions for the devised system. Computational results indicate that the $Na(Li,Mg,Ti)O_2$ system can provide a lower-barrier path for Na-ion diffusion than can a system without the addition of Mg. Experimentally, we synthesize various $Na_z(Li_y,Mg_x,Ti)O_2$ systems and evaluate their electrochemical characteristics. In agreement with the theoretical study, Mg addition to such systems improves general cell performance. For example, the prepared $Na_{0.646}(Li_{0.207}Mg_{0.013}Ti_{0.78})O_2$ system displays an increase in reversible capacity of 8.5% and in rate performance of 13.5%, compared to those characteristics of a system without the addition of Mg. Computational results indicate that these improvements can be attributed to the slight widening of the Na-$O_6$ layer in the presence of Mg in the $(Li,Ti)O_6$ layer.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.6
• /
• pp.1699-1703
• /
• 2010

The Schiff base N,N'-bis(pyridin-2-ylmethylene)benzene-1,2-diamine [BPBD] has been synthesized and explored as ionophore for preparing PVC-based membrane sensors selective to the silver ($Ag^+$) ion. Potentiometric investigations indicate high affinity of this receptor for silver ion. The best performance was shown by the membrane of composition (w/w) of ionophore: 1 mg, PVC: 33 mg, o-NPOE: 66 mg and additive were added 50 mol % relative to the ionophore in 1 mL THF. The sensor works well over a wide concentration range $1{\times}10^{-3}$ to $1.0{\times}10^{-7}$ M by pH 6 at room temperature (slope 58.6 mV/dec.) with a response time of 10 seconds and showed good selectivity to silver ion over a number of cations. It could be used successfully for the determination of silver ion content in environmental and waste water samples.

• Journal of the Korean Ceramic Society
• /
• v.36 no.10
• /
• pp.1056-1061
• /
• 1999

Phase formation and oxygen ion conduction of La(Ba)Ga(Mg)O3-$\delta$ system was studied, BaLaGa3O7 and BaLaGaO4 formed as a secondary phase above the solubility limit of Ba2+ in La3+ sites. The oxygen ionic conductivity of La(Ba)Ga(Mg)O3-$\delta$ was 0.1 S/cm 80$0^{\circ}C$ The activation energy of the oxygen ion conduction was dependent on temperature. This value was higher at low temperature than at high temperature.

• Applied Chemistry for Engineering
• /
• v.2 no.3
• /
• pp.270-278
• /
• 1991

Carboxymethyl chitin(CM-chitin) was prepared by the reaction of alkali chitin with monochloroacetic acid in isopropyl alcohol. According to the pH variation, the adsorptivity of this chelating polymer to the alkali-earth metal ions such as $Ca^{2+},\;Mg^{2+}$, $Sr^{2+}$, $Ba^{2+}$ ions was determined by batch method. The adsorption tendency of this chelating polymer to most metal ions was increased with the increase of pH. The highest degree of adsorption was observed toward $Ca^{2+}$ ion among the alkali-earth metal ions. The selectivity adsorption property toward $Ca^{2+}$ ion was examined in the solution of $Ca^{2+}$ and $Mg^{2+}$ ions, and it was observed that CM-chitin showed excellent selectivity to $Ca^{2+}$ ion than $Mg^{2+}$ ion. $Mg^{2+}$ ion bound to CM-chitin molecule in the presence of $Ca^{2+}$ ion owing to low equilibrium constant. In the adsorption experiment of $Ca^{2+}$ and $Mg^{2+}$ ions to the CM-chitin under coexistence of $Na^+$ and $K^+$ ions, it observed that adsorptivity of only $Ca^{2+}$ ions was not affected by these monovalent cations.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.77-77
• /
• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.3
• /
• pp.259-263
• /
• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.