• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.550-553
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• 2001

Li$_2$O-P$_2$O$_{5}$-Bi$_2$O$_3$-V$_2$O$_{5}$ glass containing glass former, P$_2$O$_{5}$ and Bi$_2$O$_3$ was prepard by melting the glass batch in pt. erucible followed by quenching on the copper plate. We found that Li$_2$O-P$_2$O$_{5}$-Bi$_2$O$_3$-V$_2$O$_{5}$ g1ass-ceramics obtained from the crystallization of glass showed significantly higher capacity and longer cycle life tham LiV$_3$O$_{8}$ made from powder synthesis. In this paper, we described crystallization process and LiV$_3$O$_{8}$ crystal growth in glass matrix by increasing temperature. The electrochemical properties were strongly affected by LiV$_3$O$_{8}$ crystal growth in matrix.rowth in matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.311-315
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• 2000

Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.523-527
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• 2000

Vanadate glasses in the Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ system containing 10mo1% glass former, P$_2$O$_{5}$ were prepared by melting the batch in pt. crucib1e followed by quenching on the copper plate. We found that Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics obtained from nucleation of glass showed significantly higher capacity and longer cycle life than conventionally made crystalline LiCoO$_2$, LiNiO$_2$and LiV$_3$O$_{8}$. In the present paper, We describe electro-chemical properties during crystallization process and find the best crystallization condition of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ g1ass as cathod material. Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics shows superior rechargeable capacity of 220 mAh/g in the cycling between 2.0 and 3.9V.etween 2.0 and 3.9V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.19-20
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• 2007

At first the $Ba_{0.5}Sr_{0.5}TiO_3$-MgO powder with $B_2O_3-Li_2CO_3$ were made by the Sol-Gel method. The thick films of BST-MgO with $B_2O_3-Li_2CO_3$ were fabricated on the $Al_2O_3$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_2O_3-Li_2CO_3$, addition were investigated. The structure of the BST-MgO with $B_2O_3-Li_2CO_3$ thick films were dense and homogeneous with no pores. The dielectric constant was increased and dielectric loss was decreased with increasing the sintering temperature.

• Proceedings of the KIEE Conference
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1261-1262
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• 2007

At first the $Ba_{0.5}Sr_{0.5}TiO_{3}$-MgO powder with $B_{2}O_{3}-Li_{2}CO_{3}$ were made by the Sol-Gel method. And then the thick films of BST-MgO with $B_{2}O_{3}-Li_{2}CO_{3}$ were fabricated on the $Al_{2}O_{3}$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_{2}O_{3}-Li_{2}CO_{3}$ addition were investigated. The structure of the BST-MgO with $B_{2}O_{3}-Li_{2}CO_{3}$ thick films were dense and homogeneous with no pores. The dielectric constant and dielectric loss were increased with decreasing the $B_{2}O_{3}-Li_{2}CO_{3}$ addition ratio.

• Journal of the Korean Ceramic Society
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• 제31권2호
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• pp.147-154
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• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.

• Journal of the Korean Vacuum Society
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• 제20권3호
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• pp.205-210
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• 2011

Structural and electrochemical properties of spinel oxide $LiMn_2O_4$ thin films prepared by using a sol-gel method on Pt/Ti/$SiO_2$/Si substrates were investigated. When Li/Mn molar ratio of the film was smaller than 0.5, $Mn_2O_3$hase was found to coexist with $LiMn_2O_4$. Half-cell batteries fabricated using the $LiMn_2O_4$ films as the cathode were put into chargedischarge (C-D) cycles and the change in structural properties of the cathode after the cycles was examined by X-ray diffraction and Raman spectroscopy. As the C-D cycle number increases, the discharge capacity of pure $LiMn_2O_4$ battery gradually decreases, being reduced to 72% of the initial capacity at 300 cycles. Such capacity fading is attributable to the decrease in the number of $Li^+$ ions that return to the tetrahedral sites of the spinel structure during the discharge step and the resultant increase in $Mn^{4+}$ density in the film. Also, $Mn_2O_3$ phase gradually appeared in the film as the cycle number increases.

• Journal of the Korean Vacuum Society
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• 제11권4호
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Journal of the Korean Vacuum Society
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• 제11권2호
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• pp.103-107
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• 2002

Metal/ferroelectric/semiconductor field effect transistors(MFSFET′s) with various gate electrodes, that are aluminum, platinum and poly-Si, using rapid thermal annealed $LiNbO_3$/Si(100) structures were fabricated and the properties of the FET′s have been discussed. The drain current of the "on" state of FET with Pt electrode was more than 3 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about $10^3$ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.