• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.38-43
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• 2003

Fabrication process of strain-induced channel waveguides in $LiNbO_3$ was developed using strain-optic effect and compressional strain due to ~1.4 $\mu\textrm{m}$ surface Mo/Pt metal film. Characterization of the channel waveguides revealed a single transverse and depth mode in both TE and TM polarizations. Measurements showed total insertion loss of 6.2 and 7.7 ㏈/cm for TM and TE polarizations. respectively. Electro-optic intensity modulators with 11 mm long electrode length and 21 $\mu\textrm{m}$ electrode gap at $\lambda$ = 1.15 ${\mu}{\textrm}{m}$have been produced in $LiNbO_3$ substrates using strain-induced channel waveguides. Modulation depth of 100% at $\pi$-radian voltage of 16.1V has been demonstrated. Also, 1$\times$2 on/off power splitters at $\lambda$ = 0.63 $\mu\textrm{m}$ have been produced using strain-induced channel waveguides. On/off voltage of $\pm$ 25V has been demonstrated.