• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.295-298
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• 1999

High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.78.2-78
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• 2000

• Proceedings of the Optical Society of Korea Conference
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• 2006.02a
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• pp.145-146
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• 2006

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.67-68
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• 2006

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.111-114
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• 1998

Lithium Niobate {{{{ { LiNbO}_{ 3} }}}} single crystals grown by Czichralski method at the congruent composition, have ferroelectric microdomains. These microdomins were investigated by chemical etching with hydrofluoric acid (HF) AND NITRIC ACID ({{{{ { HNO}_{3 } }}}}), and by us ing optical microscopy, scanning electron microscopy and atomic force microscopy

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.23-26
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• 1998

The domain formation phenomena of {{{{ { LiLbO}_{ 3} }}}} crystals was investigated and the method for the periodic domain formation in {{{{ { LiLbO}_{ 3} }}}} single crystals during growth was proposed in this study. The strees-induced domain formation mechanism was proposed and explained. The strong piezoelectric effect of{{{{ { LiLbO}_{ 3} }}}} at elevated temperature would be the direct driving force for the inversion of the tensile component of the internal stresses can inverse the original direction of the spontaneous polarization.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.221.2-221
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.297-301
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• 2000

Planar optical waveguides which have a higher refractive index than that of substrate were fabricated by proton exchange between $Li^+$ and $H^+$. Benzoic acid was used as proton source and process was carried out under the various reaction time and temperature. The depth of waveguide layer and the generated mode number were investigated by standard prism coupler. The cut-off depth for the fabrication of single mode optical waveguides was obtained by the function which was expressed on refractive index profile. Finally the experimental conditions for cut-of depth of single mode could be confirmed. Channel waveguides were manufactured from these confirmed conditions and the effective confinement of the induced light into waveguides was observed.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.109.2-109
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• 2002

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.419-424
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• 2009

Congruent or stoichiometric $LiNbO_3$ fiber single crystals were grown by the $\mu$-PD method, and the grown fiber crystals have the several (2 or 3) ridges with a diameter of $1.35{\sim}1.5\;mm$ and a length of $40{\sim}100\;mm$. In this $\mu$-PD process, different growth rates ($10{\sim}60\;mm/h$) were applied. Pt wire or $LiNbO_3$ crystal was used as a seed. The properties of grown $LiNbO_3$ fiber single crystals having a-axis or c-axis according to seeds were effected by the grown conditions(Pt tube diameter, pulling speed, after heater etc.). Disk-type $LiNbO_3$ samples were poled in condition of DC 5 V/cm at 1050, 1075 or $1100^{\circ}C$. XRD, SEM, conoscope image through the polarized microscope, $T_C$ measuring apparatus, optical transmittance measuring instrument are used to identify the properties of $LiNbO_3$.