• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.285-289
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• 2001

We investigated that each site was substituted by new chemical components in Langasite ($La_3Ga_5/SiO_{14}$)-type structure with superior piezoelectric characteristics than $La_3Ga_5/SiO_{14}$. In this study $Ca_3TaGa_5Si_{2}O_{14}$ was synthesized by soilid-state reaction and grown by the $\mu$-PD(micro-pilling-down)and Cz technique. Lattice parameter and chemical composition was investigated by XRD and EPMA respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.640-645
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• 1999

Recently rapid progress of electronic and telecommunication technology requires the development of new piezoelectric materials and cellular communication is more and more used in various fields. Langasite(La3Ga5SiO14) is suitable for new piezoelectric properties. Langastie can be applied as communication devices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic characteristics. So in this study Langastie(La3Ga5SiO14) single crystal with 47 mm in diameter and 25mm in length were sucessfully grown by using self-designed Czochralski system. In addition optimum growth conditions for the piezoelectric applications throughout estimation of crystal quality and frequency characteristics were investigated.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1364-1368
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• 1999

Langasite( La3Ga5SiO14) is suitable for new piezoelectric properties. Langasite can be applied for communication de-vices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic cha-racteristics. In this study Langasite( La3Ga5SiO14) single crystals were successfully grown by using self-designed Czo-chralski system. From the results of optical properties it was found that crystals having a high quality and higher optical transmittance were grown at atmosphere of 1 to 30 vol% of oxygen content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.74-79
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• 1999

Langasite($La_3Ga_5SiO_14$) is a new piezoelectric material which is similar to quartz, LN($LiNbO_3$) and LT($LiTaO_3$) in its acoustic behavior. In this study, pure Langasite and Lagnasite family groups were synthesized by the solid state reactions in air. The diffusion species for synthesis were investigated and the sintered body was studied on dielectric property to comparison of characteristics. Also, Langasite single crystals were grown by self-designed Czochralski system and characterized.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.72.1-72.1
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.69.1-69
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.234-238
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• 2005

Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline $La_3Ga_5SiO_{14}$ wafer have been examined in $Cl_2/Ar$ inductively coupled plasma (ICP) discharges. Maximum etch rate ${\sim}1600{\AA}/min$ was achieved either at relatively high source power $({\sim}1000W)$ or high $Cl_2$ content conditions in $Cl_2/Ar$ discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.115-119
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• 1998

Possibilities of substitution was investigated in the Langadite({{{{ {La }_{3 } {Ga }_{ 5}{SiO }_{14 }}}}}) system.{{{{{TiO}_{2 }}}}} was substitutes for{{{{{SiO}_{2 }}}}} followed by the substitution of{{{{{Nd}_{2 }{O}_{3}}}}}fo{{{{{La}_{2 }{O}_{3}}}}}. An effort to replace GeO2, which is reported to have been substitution for{{{{{SiO}_{2 }}}}} in the Langasit e system, for{{{{{TiO}_{2 }}}}} i n{{{{{ Nd}_{ 3} {Ga }_{5 } {TiO }_{14 } }}}} was also undertaken. In another experiment,{{{{{ Y}_{ 2}{ O}_{3 } }}}} was substituted for{{{{{ La}_{2 } {O }_{ 3} }}}}. All of substitution possibilities were investigated through solid state reactions and analyzed with XRD. Further analysis was carried out with an SEM. Lastly, the dielectric constants of the sintered body were measured.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.171-176
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• 2012

As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.