• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.7-13
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• 2007

We synthesized and investigated $La_{0.75}Sr_{0.25}FeO_3$ by Glycine Nitrate Process(GNP) method used as cathode materials for SOFC(solid oxide fuel cell). Optimized amount of glycine is 3.17 mol. ICP elemental composition analysis indicated that the stoichiometry of the synthesized powders have nearly nominal values. SEM images and XRD patterns reveal that the synthesized powder has uniform size distribution and high degree of crystallinity. The sample powders were isostatically pressed to form a pellet. The green body was sintered at $1200^{\circ}C$ and the relative density of the sintered specimens were measured by Archimedes mettled. We measured electrochemical performance of LSF by AC impedance spectroscopy. Resistance of LSF shows lower value than that of LSM throughout all temperature region. The anode-supported solid oxide fuel cell showed a performance of $342mW/cm^2(0.7V,\;488mA/cm^2)$ at $750^{\circ}C$. The electrochemical characteristics of the single cell were examined by at impedance method.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.479-484
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• 2011

In this paper, investigations of thick film $La_{0.75}Sr_{0.25}Ga_{0.8}Mg_{0.16}Fe_{0.04}O_{3-{\delta}}$ (LSGMF) cells fabricated via spin coating on either NiO-YSZ anode or $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_3$ (LSGF) cathode substrates are presented. A La-doped $CeO_2$ (LDC) layer is inserted between NiO-YSZ and LSGMF in order to prevent reactions from occurring during co-firing. For the LSGF cathode-supported cell, no interlayer was required because the components of the cathode are the same as those of LSGMF with the exception of Mg. An LSGMF electrolyte slurry was deposited homogeneously on the porous supports via spin coating. The current-voltage characteristics of the anode and cathode supported LSGMF cells at temperatures between $700^{\circ}C$ and $850^{\circ}C$ are described. The LSGF cathode supported cell demonstrates a theoretical OCV and a power density of ~420 mW $cm^2$ at $800^{\circ}C$, whereas the NiO-YSZ anode supported cell with the LDC interlayer demonstrates a maximum power density of ~350 mW $cm^2$ at $800^{\circ}C$, which decreased more rapidly than the cathode supported cell despite the presence of the LDC interlayer. Potential causes of the degradation at temperatures over $700^{\circ}C$ are also discussed.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.89-94
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• 2008

We synthesized and investigated $(La_{0.75}Sr_{0.25})_{1-x}FeO_{3-\delta}$ perovskite oxides having different stoichiomety (x = 0, 0.02, 0.04, 0.06, 0.08) as cathode materials. SEM images and XRD patterns reveal that the synthesized powder has uniform size distribution and high degree of crystallinity. The electrochemical performances of the synthesized powders were investigated by AC impedance spectroscopy. Both the electric conductivity and the electrochemical performance showed the highest properties at the stoichiometry x = 0.02. Finally, we concluded that the variation of A-site deficiency results in the variation of the amount of oxygen vacancy and micro structure, which leads to the variation of electric conductivity and polarization resistance.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.82-82
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.112-112
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• 2009

Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.