• 한국환경과학회지
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• 제15권6호
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• pp.533-538
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• 2006

Removal of $NO_x$ on $CaO/TiO_2$ photocatalyst manufactured by the addition of $Ca(OH)_2$ was measured in relation with the amount of $Ca(OH)_2$ and calcination temperature. In case of pure $TiO_2$, the $NO_x$ removal decreased greatly with the increase of calcination temperature from $500^{\circ}C\;to\;700^{\circ}C$, whereas in the photocatalyst added with $Ca(OH)_2$, the removed amount of $NO_x$ was high and constant regardless of calcination temperature. Considering $NO_x$ removal patterns depending on the amount of $Ca(OH)_2$ added(50, 30, 10wt%), high removal rate showed at the photocatalysts containing less than 30wt% of $Ca(OH)_2$, and it was about 30% higher than that of pure $TiO_2$. From the XRD patterns, it is seen that the addition of $Ca(OH)_2$ contributes to maintaining the anatase structure that is favourable to photocatalysis. It also indicates that the possibility of the formation of calcium titanate($CaTiO_3$) by reacting with $TiO_2$ above $700^{\circ}C$. Apart from the favourable crystalline structure, the addition of $Ca(OH)_2$ helped increase the alkalinity of photocatalyst surface, thus promoting the photooxidation reaction of $NO_x$.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 분석과학
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• 제5권4호
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• pp.409-415
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• 1992

$BaTiO_3$의 선구물질을 하소시키는 과정에서 얻은 X-선 회절 패턴에 인자분석법을 적용하였다. 선구물질은 수용액계에서 바륨과 티타늄의 질산염용액을 시발물질로 하여 합성하였으며 이를 여러 온도에서 하소시킨 후 X-선 회절 패턴을 얻었다. X-선 회절각에 대한 피이크세기로 구성된 데이타 매트릭스에 인자분석법을 적용시켜 3개의 인자가 존재함을 확인하였다. 3개의 인자는 $BaCO_3$, $BaTiO_3$ 및 $Ba_2TiO_4$였으며 하소온도에 따른 3가지 성분의 상대적인 농도 변화를 규명하였다.

• 한국대기환경학회지
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• 제26권1호
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• pp.1-9
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• 2010

In this study, the selective catalytic reduction of $NO_x$ with ammonia was carried out in a filter bag support reactor. The experiments were performed by powder type $MnO_x$ and $V_2O_5$/$TiO_2$ catalyst at low temperature between 130 and $250^{\circ}C$. Also, the effect of $SO_2$ and $H_2O$ on the NO conversion was investigated under our test conditions. The powder type catalysts were analyzed by X-ray photoelectron spectrum (XPS), X-ray diffraction(XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was observed that NO removal efficiency of the powder type $V_2O_5$/$TiO_2$ catalyst was 85% at low temperature($200^{\circ}C$) under presence of oxygen and that of $MnO_x$ was 50% at the same condition. The powder type $V_2O_5$/$TiO_2$ catalyst, in conclusion, was found to be available for SCR reaction in a filter bag support system.

• 한국응용과학기술학회지
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• 제25권2호
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• pp.130-136
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• 2008

$xTiO_2$-$ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area were measured. Considering the efficiency of the ethanol and phenol degradation using the catalyst, the conclusions were obtained as follows: By means of X-ray analysis of $xTiO_2$-$ySiO_2$ powder that is obtained from Titanium and Silicon alkoxide by sol-gel process, it is shown that crystal structure of anatase type is a dominating structure and, on the other hand, the structure of rutile also partly exists. The increase of $SiO_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. It is shown that more than 90% of ethanol and phenol are degraded when reaction time is about three and an hours, and the maximum degradation rate of ethanol and phenol is shown in $60TiO_2$-$40SiO_2$ catalyst.

• Journal of Magnetics
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• 제16권2호
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• pp.101-103
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• 2011

Solid solutions between $BaTiO_3$ and $LaFeO_3$ have been prepared through a solid state reaction method. The X-ray diffraction results reveal that $Ba_{1-x}La_xTi_{1-x}Fe_xO_3$ ($0.1\;{\leq}\;x\;{\leq}\;0.7$) compounds have a cubic structure, whereas the parent material $BaTiO_3$ has a tetragonal structure. The magnetization measurements indicate that the materials have a magnetic ordering at room temperature and the magnetic properties of the solid solutions depending on the doping amount of $LaFeO_3$. The origin of magnetic behaviors is believed to be from $Fe^{3+}$ ions.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• 한국세라믹학회지
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• 제40권4호
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• pp.346-349
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• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

• Applied Microscopy
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• 제34권1호
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• pp.61-69
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• 2004

복합 페로브스카이트 (1-x) $(Li_{1/2}Sm_{1/2})TiO_3-x (Na_{1/2}Sm_{1/2})TiO_3$ (LNST) system의 마이크로파 유전특성과 미세구조를 XRD와 SEM을 이용하여 연구하였다. 이 LNST는 산소팔면체의 antiphase tilting 뿐만 아니라, inphase tilting과 양이온의 antiparallel shift를 가지는 구조변화는 보인다. 또한 LNST계는 $0.0{\leq}x{\leq}0.4$에서 양이온($Li^{+1}$)의 휘발이 일어나서 A-site vacancy ordering에 의해 c축으로 cell doubling이 일어난다. 미세구조의 관찰을 통해 전 범위의 조성에서 비정상 입성장 현상을 관찰하였다. LNST계에서 A-site에 $Li^{+1}$을 치환한 LST의 공진주파수 온도계수는 큰 음의 값($-220ppm/^{\circ}C$)을 가지나, $Na^{+1}$을 치환한 NST는 큰 양의 값($+173ppm/^{\circ}C$)을 가진다. x=0.4일때 4 GHz에서 ${\varepsilon}_r=103,\;Q*f_{0}=3,700GHz$ 그리고 $T_{cf}=+50ppm/^{\circ}C$의 좋은 유전특성을 얻었다.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.161-166
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• 2005

Fresnoite($Ba_2TiSi_2O_8$)결정을 갖는 $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ 유리조성에서 BaO를 $K_2O$로 대체함에 따른 유리화, 열적특성 및 결정화 거풍에 관하여 관찰하였다. x(0$\le$x$\le$20)의 함량이 증가함에 따라 유리화가 용이하였으며, 유리 전이온도 및 결정화 온도가 저온부로 이동하였다. $Ba_2TiSi_2O_8$결정상의 생성을 XRD분석을 통하여 확인하였으며, x의 함량증가가 이질상의 생성과는 무관함을 보였다. 결정화 거동을 DTA를 이용한 비등온법에 의하여 조사하였으며, x의 함량증가에 따라 avrami 지수(n)가 $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$로, 활성화 에너지는 약 $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ 로 변화하였으며, SEM분석결과 x의 함량 증가 시 결정의 방향성이 두드러짐이 관찰되었다.