• Title/Summary/Keyword: $K_{o}$

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Hydrogen Production from Ethanol Steam Reforming over SnO2-K2O/Zeolite Y Catalyst

  • Lee, Jun-Sung;Kim, Ji-Eun;Kang, Mi-Sook
    • Bulletin of the Korean Chemical Society
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    • v.32 no.6
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    • pp.1912-1920
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    • 2011
  • The $SnO_2$ with a particle size of about 300 nm instead of Ni is used in this study to overcome rapid catalytic deactivation by the formation of a $NiAl_2O_4$ spinal structure on the conventional Ni/${\gamma}$-$Al_2O_3$ catalyst and simultaneously impregnated the catalyst with potassium (K). The $SnO_2-K_2O$ impregnated Zeolite Y catalyst ($SnO_2-K_2O$/ZY) exhibited significantly higher ethanol reforming reactivity that that achieved with $SnO_2$ 100 and $SnO_2$ 30 wt %/ZY catalysts. The main products from ethanol steam reforming (ESR) over the $SnO_2$-$K_2O$/ZY catalyst were $H_2$, $CO_2$, and $CH_4$, with no evidence of any CO molecule formation. The $H_2$ production and ethanol conversion were maximized at 89% and 100%, respectively, over $SnO_2$ 30 wt %-$K_2O$ 3.0 wt %/ZY at 600 $^{\circ}C$ for 1 h at a $CH_3CH_2OH:H_2O$ ratio of 1:1 and a gas hourly space velocity (GHSV) of 12,700 $h^{-1}$. No catalytic deactivation occurred for up to 73 h. This result is attributable to the easier and weaker of reduction of Sn components and acidities over $SnO_2-K_2O$/ZY catalyst, respectively, than those of Ni/${\gamma}$-$Al_2O_3$ catalysts.

Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam (Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정)

  • Jung K.W.;Lee H.J.;Jung W.H.;Oh H.J.;Park C.W.;Choi E.H.;Seo Y.H.;Kang S.O.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.395-403
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    • 2006
  • It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

Phase Relationship and Electromagnetic Properties in $PbO-Fe_2O_3-SiO_3$ System ($PbO-Fe_2O_3-SiO_3$계에서의 Melanotekite Plumboferrite Magnetoplumbite의 상적관계와 제물성에 관한 연구)

  • Kim, J.;Orr, K.K.;Lee, C.K.;Oh, J.H.
    • Journal of the Korean Ceramic Society
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    • v.21 no.4
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    • pp.313-322
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    • 1984
  • Phase relationships of the pseudobinary systems in melanotekite-plumboferrite and melanotekite-magnetoplumbite in $PbO-Fe_2O_3-SiO_3$ system were obtained. Dielectric electric and magnetic properties were measured in the chosen pseudo-ternary system.

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Effect of Additives on the Refractive Index of B2O3-SiO2-Al2O3 Glasses for Photolithographic Process in Electronic Micro Devices

  • Won, Ju-Yeon;Hwang, Seong-Jin;Lee, Jung-Ki;Kim, Hyung-Sun
    • Korean Journal of Materials Research
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    • v.20 no.7
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    • pp.370-373
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    • 2010
  • In fabricating plasma display panels, the photolithographic process is used to form patterns of barrier ribs with high accuracy and high aspect ratio. It is important in the photolithographic process to control the refractive index of the photosensitive paste. The composition of this paste for photolithography is based on the $B_2O_3-SiO_2-Al_2O_3$ glass system, including additives of alkali oxides and rare earth oxides. In this work, we investigated the density, structure and refractive index of glasses based on the $B_2O_3-SiO_2-Al_2O_3$ system with the addition of $Li_2O$, $K_2O$, $Na_2O$, CaO, SrO, and MgO. The refractive index of the glasses containing K2O, Na2O and CaO was similar to that of the [BO3] fraction while that of the SrO, MgO and Li2O containing glasses were not correlated with the coordination fraction. The coordination number of the boron atoms was measured by MAS NMR. The refractive index increased with a decrease of molar volume due to the increase in the number of non-bridging oxygen atoms and the polarizability. The lowest refractive index (1.485) in this study was that of the $B_2O_3-SiO_2-Al_2O_3-K_2O$ glass system due to the larger ionic radius of $K^+$. Based on our results, it has been determined that the refractive index of the $B_2O_3-SiO_2-Al_2O_3$ system should be controlled by the addition of alkali oxides and alkali earth oxides for proper formation of the photosensitive paste.

ZnO/SiO2 Prepared by Atomic Layer Deposition as Adsorbents of Organic Dye in Aqueous Solution and Its Photocatalytic Regeneration

  • Jeong, Bora;Jeong, Myung-Geun;Park, Eun Ji;Seo, Hyun Ook;Kim, Dae Han;Yoon, Hye Soo;Cho, Youn Kyoung;Kim, Young Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.167.2-167.2
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    • 2014
  • In this work, ZnO shell on mesoporous $SiO_2$ ($ZnO/SiO_2$) was prepared by atomic layer deposition (ALD). Diethylzinc (DEZ) and $H_2O$ were used as precursor of ZnO shell. $ZnO/SiO_2$ sample was characterized by X-ray diffraction (XRD), N2 sorption isotherms, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FT-IR). $ZnO/SiO_2$ showed higher adsorption capacity of MB than that of bare mesoporous $SiO_2$ and the adsorption capacities of $ZnO/SiO_2$ could be regenerated by UV exposure through the photocatalytic degradation of the adsorbed MB. This system could be used for removing organic dye from water by adsorption and reused after saturation of adsorption due to its photocatalytic regeneration.

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The Dielectric Properties of $BaTiO_3/SrTiO_3$ Heterolayered Thick Films with Stacking Periodicity (적층주기에 따른 $BaTiO_3/SrTiO_3$ 이종층 후막의 유전 특성)

  • Lee, Yoe-Bok;Choi, Eui-Sun;Lee, Moon-Kee;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.194-196
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    • 2004
  • $BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

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The Study of $K_2O-MgO-Al_2O_3-SiO_2-MgF_2$ System in Fluro-phlogopite Synthesis. (불소운모 합성에 따른 $K_2O-MgO-Al_2O_3-SiO_2-MgF_2$계의 연구)

  • 송경근;오근호;김대웅
    • Journal of the Korean Ceramic Society
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    • v.20 no.1
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    • pp.37-42
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    • 1983
  • An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

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Dissolution Properties of K2O-CaO-MgO-SiO2-P2O5 Glasses (K2O-CaO-MgO-SiO2-P2O5계 유리의 제조 및 용출특성)

  • 이용수;윤태민;강원호
    • Journal of the Korean Ceramic Society
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    • v.40 no.11
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    • pp.1132-1137
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    • 2003
  • For the application of environment conscious glass-fertilizer, dissolution characteristics of phosphate glass was investigated. In 0.1K₂O-0.1SiO₂-0.6P₂O/sub 5/ glass system, the compositions were designed according to variation of CaO & MgO contents, and glass formation region was confirmed. From the glass composition, the confirmed glasses were investigated to figure out thermal and dissolution properties. It was detected that glass transition & softening temperature of the glasses increased with increasing MgO contents. The dissolution properties of the glasses was affected by CaO and MgO content ratio.

The Synthesis of Potassium Hexatitanate Whisker by the Flux Process (융제법에 의한 육티탄산칼륨 Whisker의 합성)

  • Lee, Chul-Tae;Kim, Sung-Weon;Lee, Jin-Sik;Kim, Young-Myoung;Kwon, Kung-Taek
    • Applied Chemistry for Engineering
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    • v.5 no.3
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    • pp.478-500
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    • 1994
  • The preparation of potassium hexatitanate whisker by flux method was investigated. In this study, 8 types synthesis of flux such as $V_2O_5$, $Bi_2O_3$, $B_2O_3$, $Pb_3O_4$, KCl, $K_4P_2O_7$, $K_2WO_4$ and $K_2MoO_4$ were tested to find a suitable flux for the synthesis of potassium hexatitanate whisker. Effects of various reaction variables such as reaction temperature, time, $TiO_2$ mole ratio to $K_2CO_3$, flux mole ratio to the mixture of $K_2CO_3$ and $TiO_2$, and slow-cooling treatment on the crystallization of potassium hexatitanate whisker were investigated. $K_2MoO_4$ and $K_2WO_4$ were better flux than others tested for the synthesis of potassium hexatitanate. In the presence of $K_2MoO_4$ or $K_2WO_4$ flux, the optimum condition for the synthesis of potassium hexatitanate whisker was that reaction temperature of $1000{\sim}1100^{\circ}C$, reaction time of 5 hours, $TiO_2$ mole ratio to $K_2CO_3$ of 6.0, and flux mole ratio to mixture ($K_2O+nTiO_2$) of 4.0. Slow-cooling treatment showed good effect on the growth of long fibrous potassium hexatitanate.

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