• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.445-449
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• 1999

We studied the properties of the InAs epitaxial layers grown of (100)-oriented GaAs ($2^{\circ}$tilted toward[011]) by molecular beam epitaxy. From DCX (double-crystal x0ray), the better crystal quality was shown in InAs epitaxial layers on about 2500$\AA$ GaAs epitaxial layers on GaAs, we obtained the high mobility of InAs epitaxy in As/In BEP ratio (1.2~2.0) from Hall effect measurement. The electron mobility increased as electron concentration increases, until Si cell temperature $960^{\circ}C$$(N_D=2.21\times10^{-17}\textrm{cm}^{-3})$. The mobility decreases as the Si cell temperature increases, at the temperature over $960^{\circ}C$. We obtained the high mobility (1.10$\times$104cm2/V.s) at Si electron concentration of $N_D=2.21\times10^{-17}\textrm{cm}^{-3}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1529-1530
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• 2007

The manganese co-doped $Ca_8Mg_1(SiO_4)_4Cl_2:Eu^{2+}$,$Mn^{2+}$ phosphor was synthesized by solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor show two emission spetrums: green band of 512nm and yellow band of 550nm. White light-emitting diodes (LEDs) were fabricated through combination of a 405nm-emitting InGaN chip and a synthesis phosphor in a single package. Under 20mA current, its CIE chromaticity coordinates are x=0.40 and y=0.45 and a color temperature of 4053K.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.70-75
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• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• ETRI Journal
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• v.24 no.5
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• pp.349-359
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• 2002

With Ni/Au and Pd/Au metal schemes and low temperature processing, we formed low resistance stable Ohmic contacts to p-type GaN. Our investigation was preceded by conventional cleaning, followed by treatment in boiling $HNO_3$:HCl (1:3). Metallization was by thermally evaporating 30 nm Ni/15 nm Au or 25 nm Pd/15 nm Au. After heat treatment in $O_2$ + $N_2$ at various temperatures, the contacts were subsequently cooled in liquid nitrogen. Cryogenic cooling following heat treatment at $600^{\circ}C$ decreased the specific contact resistance from $9.84{\times}10^{-4}$ ${\Omega}cm^2$ to $2.65{\times}10^{-4}$ ${\Omega}cm^2$ for the Ni/Au contacts, while this increased it from $1.80{\times}10^{-4}$ ${\Omega}cm^2$ to $3.34{\times}10^{-4}$ ${\Omega}cm^2$ for the Pd/Au contacts. The Ni/Au contacts showed slightly higher specific contact resistance than the Pd/Au contacts, although they were more stable than the Pd contacts. X-ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts, whereas the Pd/Au contacts exhibited a Pd:Au solid solution. The contacts quenched in liquid nitrogen following sintering were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current-voltage-temperature analysis revealed that conduction was predominantly by thermionic field emission.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.78.1-78.1
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• 2012

비 휘발성 저항 메모리소자인 resistance random access memory (ReRAM)는 빠른 동작특성과 저 전압 특성을 나타내고 비교적 간단한 소자구조로 고집적화에 유리하여 기존의 DRAM과 flash 메모리, SRAM 등이 갖고 있는 한계를 극복할 수 있는 차세대 메모리소자로써 각광받고 있다. 현재, 이성분계 산화물, 페로브스카이트 산화물, 고체 전해질 물질, 유기재료 등을 응용한 저항 메모리소자에 대한 연구가 활발히 진행되고 있다. 그 중 ZnO 를 기반으로 하는 amorphous InGaZnO (a-IGZO) 박막은 저온에서 대면적 증착이 가능하며 다른 비정질 재료에 비해 높은 전하 이동도를 갖기 때문에 박막트랜지스터 적용 시 우수한 전기적 특성을 나타낸다. 또한 빠른 동작특성과 높은 저항 변화율을 보이기 때문에 ReRAM에 응용 가능한 재료로써 기대되고 있다. 본 연구에서는 MOM(metal/oxide/metal) 구조를 기반한 TiN/a-IGZO/ITO 구조의 소자를 제작하여 저항 메모리 특성을 평가하였다. IGZO 박막은 radio frequency (RF) sputter 를 이용하여 ITO/glass 기판 위에 증착하였다. MOM 구조를 위한 상부 TiN 전극은 e-beam evaporation 을 이용하여 증착하였다. 제작된 저항 메모리소자는 안정적인 unipolar resistive switching 특성을 나타내었으며, TiN 상부전극과 IGZO 계면 간의 Transmission Electron Microscopy (TEM) 분석을 통해 전압 인가 후 전극 금속 물질의 박막 내 삽입으로 인한 금속 필라멘트의 형성을 관찰 할 수 있었다. 합성된 박막의 형태와 결정성은 Scanning electron microscope (SEM)와 X-ray Diffraction (XRD)을 통해 평가 하였으며, 제작된 소자의 전기적 특성은 HP-4145 를 이용하여 측정하고 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.178-178
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• 2008

초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

• Journal of The Korean Society of Inherited Metabolic disease
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• v.5 no.1
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• pp.65-75
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• 2005

Purpose: To understand genetic differences and similarities between mucolipidosis and control. Methods: Using the fibroblast of the mucolipidosis II and control, forward and reverse subtracted libraries were constructed. Among these clones, we investigated mutations in the GNPTA (MGC4170) gene, which codes for the ${\alpha}/{\beta}$ subunits of phosphotransferase, and in the GNPTAG gene, which codes for the ${\gamma}$ subunits in 5 Korean patients with mucolipidosis type II or IIIA. Result: Several differentially expressed cDNAs were cloned and their sequences were determined. Mutation analysis of the interested gene, GNPTA was performed and we identified 7 mutations in the GNPTA gene, but none in the GNPTAG gene. The mutations in type II patients included p.Q104X(c.310C>T), p.R1189X(c.3565C>T), p.S1058X(c.3173C>G), p.W894X(c.2681G>A) and p.H1158fsX15(c.3474_3475delTA), all of which are non-sense or frame shift mutations. However, a splicing site mutation, IVS13+1G>A (c.2715+1G>A) was detected along with a non-sense or a frame shift mutation (p.R1189X or p.E858fsX3(c.2574_2575delGA)) in two mucolipidosis type IIIA patients. Conclusion: This report shows that mutations in the GNPTA gene coding for the ${\alpha}{\beta}$subunits of phosphotransferase, and not mutations in the GNPTAG gene, account for most of mutations found in Korean patients with mucolipidosis type II or IIIA.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.152-153
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• 2006

We demonstrate the methodology of engineering the multi-component ceramic nanopowder with precise morphology by nanoblast calcinations decomposition of preliminary engineered nanoreactors. Multiple explosions of just melted $C_3H_6N_6O_6$ embedded into preliminary engineered nanoreactors break apart the agglomerates due to the highly energetic impacts of the blast waves. Also, the solid-solubility of one component into the other is enhanced by the extremely high local temperature generated during each nano-explosion in surrounding area. This methodology was applied for production of agglomeratefree nano-aggregates of $Gd_{20}Ce_{80}O_{1.95}$ with an average size of 42 nm and $LaSrGaMgO_{3-x}$ nanopowder with an average aggregate size of 83 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.