• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.121-124
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• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

• Journal of Korean Academy of Dental Administration
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• v.11 no.1
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• pp.38-46
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• 2023

Composite resins, commonly used in clinical practice, have been developed to improve aesthetics to obtain smooth surfaces. Although the restored composite resin has a smooth surface, it gradually becomes rough over time. Therefore, this study measured glossiness to evaluate the surface of various composite resins and attempted to evaluate the maintenance of glossiness of composite resins by observing surfaces that change to roughness. Specimens were produced using resin used in clinical practice: Gradia direct anterior (GA), Tetric N-Ceram (TN), Ceram.X Sphere TEC one (CX), Filtek Z350XT (FT), Estelite sigma quick (ES). After creating a smooth surface with slide glass, five locations were randomly selected to measure surface gloss, and the average was the representative value of the specimen. Roughness was applied to the specimen under water pouring at the same speed and pressure using SiC paper #2400, 1200, and 400. The gloss unit of different SiC papers was measured. To evaluate the gloss unit and gloss retention between composite resins, one-way analysis of variance and Tukey multiple comparisons test were used. As a result of the study, there was a difference in gloss unit of specimens produced under the same conditions. Although the degree differed depending on the composite resin, there was also a difference in gloss retention. Based on the findings, composite resins show differences in gloss due to their different characteristics. Ceram.X Sphere TEC one (CX) showing the lowest gloss retention and Estelite sigma quick (ES) showing the highest.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.168-169
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• 2019

본 논문은 친환경자동차용 저전압 DC-DC 컨버터(Low-voltage DC-DC converter, LDC)의 고전력밀도 달성을 위한 스위칭 주파수 선정 및 구조 설계 방법을 소개한다. 위상천이 풀-브릿지(Phase-Shift Full-Bridge, PSFB) 컨버터의 손실 분석을 통해 스위칭 주파수 700kHz 선정하였으며, 냉각수 온도 65℃, 분당 8리터의 유량 기준으로 소자 온도가 110℃ 이내로 관리 되도록 고려하여 구조 설계를 수행했다. 온도 조건을 만족하면서 8kW/L의 높은 전력밀도를 달성하였으며 입력전압 200V-310V, 출력전압 12.8V-15.1V의 전압 범위를 만족하는 1.8kW 최종 시작품을 제작하여 실험으로 검증하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.92-92
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• 1999

양자우물 무질서화 기술은 양자우물구조의 성장후 그 구조의 밴드갭을 국부적으로 변화시킬 수 있는 기술적 특성으로 인해 기존의 광기능 소자 제작을 위한 결정재성장방법을 대체 혹은 보완할 수 있는 장점이 있기 때문에 최근 활발히 연구되고 있다. 여러 가지 양자우물 무질서화공정중 유전체 박막을 사용하는 impurity free vacancy disordering (IFVD) 공정은 불순물이 개입하지 않는 공정으로 공정후 양질의 반도체 표면을 유지할 수 있는 장점이 있으며 고아소자 제작시 광손실의 증가를 초래하지 않는다. 이 공정은 vacancy의 source로 작용하는 유전체박막의 특성에 크게 의존하며 GaAs/AlGaAs 계열의 양자우물에서는 많은 연구가 진행되었으나, 광통신용 광소자의 제작에 사용되는 InGaAs/InGaAsP 계열의 양자우물에 대한 연구는 충분하지 않다. 그림 1은 IFVD를 위해 본 연구에서 사용된 CBE로 성장한 InGaAs/InGaAsP SQW 구조이다. 성장된 구조는 상온에서의 QW peak, λpl=1550nm 이었다. IFVD를 위한 유전체 덮개층으로는 PECVD로 성장 조정하여 박막성장시의 조건을 변화시킴으로써 유전체 덮개층 박막의 특성을 변화시켰다. 그림 2는 질소 분위기의 furnace에서 75$0^{\circ}C$로 8분간 IFVD를 수행한후 측정한 무질서화된 양자우물의 상온 PL spectrum을 보여준다. 그림에서 보는바와 같이 동일한 SiNx 덮개층을 사용하는 경우에도 적어도 24meV의 bandgap차를 갖는 양자우물을 영역을 동일한 기판상에 제작할 수 있음을 알 수 있다. 일반적으로 IFVD 방법으로 국부적으로 양자우물을 무질서화 하기 위해서는 SiNx/SiO2와 같은 강이한 박막을 사용하였지만 이 방법을 사용하는 경우 상이한 박막을 사용하는 데서 야기되는 제반 문제를 해결할 수 있을 것으로 판단된다. 따라서 이 기술은 기존의 광소자 제작을 위한 IFVD 방법의 문제점을 해결할 뿐만 아니라 결정 재성장 없이 도일한 기판상에 국부적으로 상이한 bandgap 영역을 만들 수 있기 때문에 광소자 제작에 적극 이용될 수 있다.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.38 no.4
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• pp.350-359
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• 1993

The effect of gibberellic acid ($GA_3) and abscisic acid (ABA) on KCl-enhanced proteolysis of senescing leaves of rice(Oryza sativa L. cv. Chilsung) was studied. Emphasis was given to their effects on KCI-enhanced efflux of amino acids and proteinase activity. When treated singly, $GA_3 affected leaf proteolysis little, while ABA increased proteolysis, the rate of amino acid efflux, and ribulose -1,5 -bisphosphate carboxylase / oxygenase (Rubisco)-degrading endoproteinase activity. An additive increase in all three parameters mentioned above was observed when leaves were treated with ABA and KCl. No such an additive effect was found when $GA_3 was treated with KCl. Both $GA_3 and ABA helped to alleviate the KCI-suppressed activity of Rubisco-degrading exoproteinases. The additive increase in proteolysis of rice leaves in the presence of both ABA and KCl could thus be ascribed to a further increase in the efflux of protein hydrolyzates and Rubisco-degrading endoproteinase activity. An increase in proteolysis was accompanied by a decrease in water absorption, and the combined treatment of ABA with KCl resulted in a further reduction of water absorption.

• Korean Journal of Materials Research
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• v.32 no.6
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• pp.293-300
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• 2022

This study investigated a graded-refractive-index (GRIN) coating pattern capable of improving the light extraction efficiency of GaN light-emitting diodes (LEDs). The planar LEDs had total internal reflection thanks to the large difference in refractive index between the LED semiconductor and the surrounding medium (air). The main goal of this paper was to reduce the trapped light inside the LED by controlling the refractive index using various compositions of (TiO₂)_x(SiO₂)_1-x in GRIN LEDs consisting of five dielectric layers. Several types of multilayer LEDs were simulated and it was determined the transmittance value of the LEDs with many layers was greater than the LEDs with less layers. Then, the specific ranges of incident angles of the individual layers which depend on the refractive index were evaluated. According to theoretical calculations, the light extraction efficiency (LEE) of the five-layer GRIN is 25.29 %, 28.54 % and 30.22 %, respectively. Consequently, the five-layer GRIN LEDs patterned enhancement outcome LEE over the reference planar LEDs. The results suggest the increased light extraction efficiency is related to the loss of Fresnel transmission and the release of the light mode trapped inside the LED chip by the graded-refractive-index.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).