• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.51-54
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• 2004

Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.655-660
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• 2001

Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1239-1247
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• 2012

In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.56-59
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• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.472-472
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• 2013

본 논문은 InN와 GaN를 교대로 증착하는 교번성장법을 이용해 제작한 4주기 InN/GaN 박막의 구조적, 광학적, 특성을 X-ray diffraction, Atomic force microscopy, Transmission electron microscopy과 저온 Photoluminescence (PL) 장비를 사용하여 분석한 결과를 보고한다. Fig. 1은 4주기 InN/GaN박막의 XRD 스펙트럼으로 GaN(0002)와 InN(0002)의 회절 신호를 관찰할 수 있다. 그러나 두 피크뿐만 아니라 InN와 GaN 사이에 구분이 되지 않은 추가 신호를 확인할 수 있다. 추가신호는 InN와 GaN 계면에서 발생하는 상호확산 확률로서 해석할 수 있다. Fig. 2는 다양한 조건에서 성장한 InN/GaN 시료의 PL스펙트럼으로 방출 파장은 각각 1,380, 1,290, 1,280, 1,271, 1,246 nm로 측정되었다. 성장 조건 변화에 따른 발광특성 변화를 박막에서 III족 원자 특히, In 원자의 성장 거동에 따른 구속준위(Localized states) 변화로 논의할 예정이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.781-786
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• 2005

The binding energy in the n-type $GaAs/Al_xGa_{1-x}As$ quantum well is calculated. The shooting method, modified from the finite difference method, is used for the calculation of the subband energy level and its wave function. In order to account tot the change of the potential energy due to the charged particles, impurities and electrons, the self consistent method is employed. The wave function used for the calculation of the binding energy is assumed to be composed of the envelope function and hydrogenic 1s function. Then, the binding energies calculated by taking into account lot two different types of the hydrogenic 1s function are compared.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.172-182
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• 2014

In this paper, is is presented the result of design and fabrication for X band T/R module using in active array radar. The high power RF circuit was fabricated using GaN element, so that high power and high efficiency was fulfilled comparing with the previous T/R module that have under 50 W output power for X band. Designed X band T/R module demonstrated 200 W(53 dBm) peak power, 20 us pulse width with 0.4 dB pulse droop and 20 % duty cycle. And it has characteristics of 26 dB receive gain and 4.5 dB noise figure. The structure was applied to prevent serious damage of receive path and GaN HPA by transmitting power during trasmit time of a pulse radar.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.33-37
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• 1997

The optical properties of (1210) GaN epitaxy films grown on the (1012) $\alpha-A1_2O_3$ substrates have been studied. The hetero-epitaxy films were grown by the halide vapor phase epitaxy (HVPE) method using $Ga/HC1/NH_3/He$ system at $990^{\circ}C$. XRD, RHEED and SEM are used for the identification of the hetero-epitaxy films structure and surface morphology. The confirmed (1210) GaN epitaxy films were characterized by PL and Raman. By the Raman scattering, the active phonon modes of single-phase GaN films are varied with the arrangement of both polarization and propagation directions of laser beam with reference to the axis in single-phase crystal films. The Y(Z, Y & Z) X geometry allows scattering pat-terns of $A_1(TO)=533\;cm^{-1},\;E_1(TO)=559\;cm^{-1}\;and\;E_2=568 cm^{-1}$ modes, whereas in the Z(Y, Y & Z) X geometry the only $E_2$ mode are observed.