• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.2
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• pp.95-106
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• 2021

The SO₄ in the jarosite structure can be substituted by other oxyanions, and therefore, the transition of jarosite to goethite plays a very important role in controlling the behavior of oxyanions. In this study, the phase change according to the species of the oxyanion in jarosite and the related behavior of the oxyanion was studied by mineralogical and geochemical methods when jarosite, which is coprecipitated with various oxynions, undergoes a phase change by a reductive dissolution. Jarosite substituted by five oxyanions by 5 mol% was used in this study. The mineral phase change induced by reductive dissolution using ammonium oxalate was investigated, and the order of phase transition rate of jarosite to goethite was MoO₄-jarosite ≥ SeO₄-jarosite ≥ CrO₄-jarosite > pure jarosite > SeO₃-jarosite > AsO₄-jarosite, showing that the transition rates vary depending on the substituted oxyanion. The resultant concentration of the leached Fe was slightly different depending on the type of oxyanion and time but did not show a noticeable difference. The concentration of each oxyanion leached according to the change of the mineral phase showed that the order of concentration of oxyanions was Mo > Se(SeO₃) > As > Se(SeO₄) > Cr in general, and showed a slight increase with time. This trend was related to the species of oxyanions rather than mineral phase change. The results of this study showed that the phase transition of jarosite to goethite was affected by the species of oxyanions, but this tendency did not affect the concentrations leached oxyanions.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.140-148
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• 1993

In this study, the electrical and optical properties of amorphous, crystallization and thin film of As-Ge-Se Chalcogenide System was investigated. Typical composition of this material has $As_{20~50}Se_{40~70} and Ge_{10~40}$ at%. Materials having Se was fixed to 40 at% and As was above 30 at% much more increased the electrical conductivity. After crystallization at the temperature of $476^{\circ}C$ for 3 hour was showed the best electrical conductivity of 1.74E-13$(\Omega cm)^{-l}$. And the main crystalline phase of this sample can be investigated using the mixed crystalline, i.e, $GeSe_2 and As_2Se_3$ phases. The thin film shows the optical absorption coefficient in the range $2{times}10^3 to 7{times}10^4$ and the optical energy gap of 1.85eV.

• Archives of Pharmacal Research
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• v.29 no.10
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• pp.859-865
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• 2006

With an approach to study the anti-tumor effects and mechanism of selenium compound, we investigated the anti-tumor activity and mechanism of $Na_5SeV_5O_{18}{\cdot}3H_2O$ (NaSeVO) in K562 cells. The results showed that $0.625{\sim}20\;mg/L$ NaSeVO could significantly inhibit the proliferation of K562 cells in vitro in a time- and concentration-dependent manner as determined by microculture tetrazolium (MTT) assay, the IC50 values were 14.41 (4.45-46.60) and 3.45 (2.29-5.22) mg/L after 48 hand 72 h treatment with NaSeVO respectively. In vivo experiments demonstrated that i.p. administration of 5, 10 mg/kg NaSeVO exhibited an significant inhibitory effect on the growth of transplantation tumor sarcoma 180 (S180) and hepatoma 22 (H22) in mice, with inhibition rate 26.8% and 58.4% on S180 and 31.3% and 47.4% on H22, respectively. Cell cycle studies indicated that the proportion of G0/G1 phase was increased at 2.5 mg/L while decreased at 10 mg/L after treatment for 24, 48 h. Whereas S phase was decreased at 2.5-5 mg/L and markedly increased at 10 mg/L after treatment for 48 h. After treatment for 24 h, 10 mg/L NaSeVO also markedly increased S and G2/M phases. Take together, the result clearly showed that NaSeVO markedly increased S and G2/M phases at 10 mg/L. The study of immunocytochemistry showed that the expression bcl-2 is significantly inhibited by 10 mg/L NaSeVO, and bax increased. Morphology observation also revealed typical apoptotic features. NaSeVO also significantly caused the accumulation of $Ca^{2+}$ and $Mg^{2+}$, reactive oxygen species (ROS) and the reduction of pH value and mitochondrial membrane potential in K562 cells as compared with control by confocal laser scanning microscope. These results suggest that NaSeVO has anti-tumor effects and its mechanism is attributed partially to apoptosis induced by the elevation of intracellular $Ca^{2+}$, $Mg^{2+}$ and ROS concentration, and a reduction of pH value and mitochondria membrane potential (MMP).

• Current Photovoltaic Research
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• v.7 no.1
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• pp.1-8
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• 2019

The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.55-60
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• 1996

The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of $H_{2}Se$ and the new adduct source dimethylzinc:triethyllamine($DMZn:NEt_{3}$) as compared with those obtained with $H_{2}Se$ and DMZn. At lower temperatures ($<300^{\circ}C$) and pressures(<30Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photoluminescence spectra of the grown films demonstrate that DMZn and $DMZn:NEt_{3}$ produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.

• Journal of Surface Science and Engineering
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• v.44 no.5
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• pp.185-189
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• 2011

$Cu_2ZnSnSe_4$ thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized $Cu_2ZnSnSe_4$ compound target. The film's composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of $Cu_2ZnSnSe_4$ thin films were above 104 cm.1 with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as $10^{-1}{\Omega}cm$ and a carrier concentration in the order of $10^{17}cm^{-3}$.

• Asian-Australasian Journal of Animal Sciences
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• v.19 no.1
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• pp.61-66
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• 2006

This experiment was conducted to evaluate the effects of different selenium (Se) products (inorganic, organic A, organic B) added at two supplemental dietary Se levels (0.1 and 0.3 mg/kg) on growth performance, nutrient digestibility and Se retention in growing-finishing pigs. A $3{\times}2$ factorial arrangement of treatments was used in a RCB design, with a non-Se-fortified basal diet serving as the negative control. A total of 56 crossbred pigs (28 male and 28 female pigs) initially weighing an average $28.45{\pm}0.53kg$ BW were allotted to each treatment with four pigs per pen on the basis of sex and weight. Two pigs per pen were selected and bled from the anterior vena cava at 3- weekly intervals to analyze Se concentration. In the growing phase (0-6 weeks), increased ADFI was observed when pigs were fed organic Se compared to those fed the control diet or inorganic Se treatment (p<0.05). Pigs fed inorganic Se had a great ADFI than pigs fed organic Se (p<0.05) in the late finishing phase (7-12 weeks), although there were no differences in whole period ADFI between organic or inorganic Se products. During 12 weeks of the whole experimental period, serum Se concentration increased linearly when dietary Se level increased regardless of Se products (p<0.05). Both dietary Se source (p<0.05) and Se level (p<0.01) influenced the Se concentration of various pig tissues at end of this experiment and Se content was the highest in the kidney. For the determination of nutrient digestibility, a metabolic trial was conducted in 3 replicates in randomized complete block (RCB) design. A total of 21 barrows ($50.21{\pm}0.62kg$ of average BW) were used in the metabolic study. Selenium supplementation had no effect on nutrient digestibility except for crude protein. Crude protein digestibility increased with dietary supplementation of organic Se (A) compared with other forms of Se products or control diet (p<0.05). Consequently, this experiment indicated that dietary Se products and levels had no effect on growth performance of pigs. Se concentration in tissues and serum was increased in proportion to dietary Se level, especially when organic Se was provided. Although pigs were fed organic forms of Se, bioavailability of organic forms varied among products, consequently bioactivity of organic products to the animals should be evaluated before practical application in animal feed.