• Progress in Superconductivity
• /
• 제9권2호
• /
• pp.188-192
• /
• 2008

We investigated the size effect on quench development in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current, and immersed in liquid nitrogen during the experiment. After the initial rapid rise, the resistance increased moderately and then slowly. In 4 inch-diameter meander lines, the period during which the resistance increased moderately was considerably longer than in 2 inch-diameter line. Moderate increase of resistance was originated from quench propagation. The film temperature was about 180 K at the point when the propagation was completed. The rate of resistance increase after the quench completion was not affected by the film size.

• 한국진공학회지
• /
• 제5권3호
• /
• pp.245-250
• /
• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.

• The Korean Journal of Ceramics
• /
• 제3권2호
• /
• pp.105-109
• /
• 1997

The effects of surface conditions of the C-2 cemented carbide substrate on the adhesion of diamond film were investigated. The substrates were pretreated for different times with Murakami's reagent and then the acid solution of an H2SO4-H2O2. The adhesion strength was estimated by a peeling area around the Rockwell-A indentation. The cutting performance of the diamond-coated tools was evaluated by measuring flank wears in dry turning of Al-17% Si alloy. The morphology of deposited diamond crystallites was dominated by (111) and (220) surfaces with a cubooctahedral shape. The diamond film quality was hardly affected by the surface conditions of the substrate. The variation of tool life with longer substrate etching times resulted from a compromies between the increase of film adhesion at the interface and the decrease of toughness at the substrate surface. The coated tools were mainly deteriorated by chipping and flaking of the diamond film form a lock of adhesion strength, differently from the wear phenomena of PCD tools.

• Journal of Radiation Protection and Research
• /
• 제39권4호
• /
• pp.199-205
• /
• 2014

중성자 검출분야에서$^3He$는 높은 중성자 검출효율 때문에 아주 많이 사용되고 있다. 하지만 2009년 초반부터 발생하고 있는 전세계적인 $^3He$의 품귀현상으로 인하여 가격이 급등하고 수급이 어려워졌기 때문에 대체 중성자 검출물질에 대한 필요성이 높아졌다. 그러므로 중성자 검출물질로 사용될 수는 있지만 $^3He$에 비해 반응효율이 낮아 중성자 검출용으로 주로 사용되지 않던 물질들을 사용하여 검출기를 제작하는 연구가 다시 활발하게 진행되고 있다. $BF_3$, $^6Li$, $^{10}B$, $Gd_2O_2S$ 등과 같은 $^3He$ 대체 물질들 중 하나인 $^{10}B$은 손쉬운 감마선 구별, 무독성, 낮은 가격 등과 같은 여러 장점으로 인하여 여러 연구그룹에서 연구되고 있다. $^{10}B$ 박막을 이용한 중성자 검출은 중성자와 반응하여 발생되는 2차 방사선을 측정하여 간접적으로 중성자를 측정하는 검출기법이다. 반응을 통해 생성된 알파입자의 비정은 고체 내에서 아주 짧기 때문에 $^{10}B$ 층은 박막 형태로 얇게 제작해야 한다. 그러므로 중성자와 박막의 반응을 통해 발생되는 알파입자의 검출효율을 증가시키기 위해서는 $^{10}B$ 박막의 두께를 얇게 제작하는 것이 중요하다. 하지만 박막의 두께를 얇게 제작하는 것은 중성자와 반응하여 생성되는 알파입자의 수집효율을 증가시키는 장점이 있지만 또한 중성자와 반응할 단면적을 감소시키는 단점이 있다. 본 논문에서는 리튬이온전지에 사용되는 초박막 극판 제조 기술을 이용하여 중성자 검출을 위한 대략 $60{\mu}m$ 두께의 얇은 $^{10}B$ 박막을 제작하였다. 그리고 전도성, 분포, 점착력, 유연성와 같은 간단한 물리적 실험을 통해 제작된 $^{10}B$ 박막의 물성을 확인하였다. 또한, 제작된 $^{10}B$ 박막을 사용하여 중성자 모니터링을 위한 비례계수기 제작하고 이를 이용하여 한국원자력연구원의 중성자 조사시설의 중성자 파고 스펙트럼을 측정하였다. 또한, 중성자 검출효율을 증가시킬 수 있는 방법 중 하나인 다층 박막을 이용한 중성자 측정 방법을 이용하여 박막 층수에 따른 중성자 검출효율의 변화를 몬테칼로 전산모사 기법을 이용하여 계산하였고 실험을 통해 박막층의 증가에 따른 신호변화를 측정하였다.

• 한국전기전자재료학회논문지
• /
• 제25권9호
• /
• pp.681-685
• /
• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• 대한화학회지
• /
• 제65권2호
• /
• pp.125-132
• /
• 2021

An electrochromic nickel oxide thin film was fabricated on a flexible PET/ITO substrate using a nanocrystallite- dispersed coating sol and bar coater. Nanocrystalline NiOx of 3-4 nm crystallite size was first synthesized by base precipitation and thermal conversion. This NiOx nanocrystallite powder was mechanically dispersed in an alcoholic solvent mixed with a silane binder to prepare a coating sol for thin film. This sol method is different from the normal sol-gel method in that it does not require the conversion of precursor by heat treatment. Therefore, this method provides a very facile method to prepare NiOx thin films on any kind of substrate and it can be easily applied to mass production. The electrochromic performance of this NiOx thin film on PET/ITO electrode with a thickness of about 400 nm was investigated in a nonaqueous LiClO4 electrolyte solution by cyclic voltammetric and repeated chronoamperometric measurements in conjunction with spectrophotometry. The visible light modulation of 44% and the colorization efficiency of 41 ㎠/C at 550 nm were obtained at the step potentials of -0.8/+1.2 V vs Ag and a duration of 30 s.

• 한국진공학회지
• /
• 제20권3호
• /
• pp.200-204
• /
• 2011

이 논문에서는 반도체의 기판으로 사용되는 Si(silicon)기판과 금속배선 물질인 Cu(copper)의 확산을 효과적으로 방지하기 위한 W(Tungsten)-C(Carbon)-N(Nitrogen) 확산방지막을 제시하였고, 시료 증착을 위하여 rf magnetron sputter를 사용하여 동일한 증착조건에서 질소(N)의 비율을 다르게 증착한 후 시료의 열적 안정성 측정을 위하여 상온에서 $800^{\circ}C$까지 각각 질소 분위기에서 30분간 열처리 과정을 실시하여 열적 손상을 인가하였다. 이후 Nanoindentation 기법을 이용하여 총 16 points에서 Elastic modulus와 Weibull distribution을 측정하였다. 그 결과 질화물질이 고온에서 물성변화가 적게 나타나는 것을 알 수 있었고, 온도변화에 따른 박막의 균일도와 결정성 또한 질화물질에서 더 안정적이었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제52권10호
• /
• pp.436-440
• /
• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• 한국세라믹학회지
• /
• 제39권8호
• /
• pp.750-757
• /
• 2002

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$와 $Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

• Electronic Materials Letters
• /
• 제14권6호
• /
• pp.733-738
• /
• 2018

Undoped and Mn-doped $In_2O_3$ films were prepared by radiofrequency magnetron sputtering technique. The effects of Mn doping on the structural and optical properties of as-prepared films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped $In_2O_3$ thin film, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealed that the doped Mn ions exist at + 2 oxidation states, substituting for the $In^{3+}$ sites in the $In_2O_3$ lattice. UV-Vis measurements show that the optical band gap $E_g$ decreases from 3.33 to 2.87 eV with Mn doping in $In_2O_3$, implying an increasing sp-d exchange interaction in the film. Our work demonstrates a practical means to manipulate the band gap energy of $In_2O_3$ thin film via Mn impurity doping, and significantly improves the photoelectrochemical activity.