• 한국분말재료학회지
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• 제27권5호
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• pp.394-400
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• 2020

Molybdenum trioxide (MoO₃) is used in various applications including sensors, photocatalysts, and batteries owing to its excellent ionic conductivity and thermal properties. It can also be used as a precursor in the hydrogen reduction process to obtain molybdenum metals. Control of the parameters governing the MoO₃ synthesis process is extremely important because the size and shape of MoO₃ in the reduction process affect the shape, size, and crystallization of Mo metal. In this study, we fabricated MoO₃ nanoparticles using a solution combustion synthesis (SCS) method that utilizes an organic additive, thereby controlling their morphology. The nucleation behavior and particle morphology were confirmed using ultraviolet-visible spectroscopy (UV-vis) and field emission scanning electron microscopy (FE-SEM). The concentration of the precursor (ammonium heptamolybdate tetrahydrate) was adjusted to be 0.1, 0.2, and 0.4 M. Depending on this concentration, different nucleation rates were obtained, thereby resulting in different particle morphologies.

• 한국분말재료학회지
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• 제19권1호
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• pp.60-66
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• 2012

In this study, Platinum(Pt) nanoparticles were synthesized by using polyol process which is one of the liquid phase reduction methods. Dihydrogen hexachloroplatinate (IV) hexahydrate $(H_2PtCl_6{\cdot}6H_2O)$, as a precursor, was dissolved in ethylene glycol and silver nitrate ($AgNO_3$) was added as metal salt for shape control of Pt particle. Also, polyvinylpyrrolidone (PVP), as capping agent, was added to reduce the size of particle and to separate the particles. The size of Pt nanoparticles was evaluated particle size analyzer (PSA). The size and morphology of Pt nanoparticles were observed by transmission electron microscopy (TEM) and high resolution TEM (HRTEM). Synthesized Pt nanoparticles were studied with varying time and temperature of polyol process. Pt nanoparticles have been successfully synthesized with controlled sizes in the range 5-10 and 20-40 nm with cube and multiple-cube shapes.

• 대한기계학회논문집A
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• 제32권9호
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• pp.754-760
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• 2008

A two-photon induced photoreduction process suggests a possibility for fabricating complicated metallic microstructures which can be applied to 3-D micro-circuits and optical devices, etc. The process employs the photoreduction of silver ions in a metallic solution which is composed of metallic salt ($AgNO_3$) and watersoluble polymer ((poly(4-styrenesulfonique acid) 18wt. % in $H_2O$, $(C_8H_8O_3S)_n$)). In this process, the improvement of the resolution and the uniformity of fabricated metallic structures are important issues. To address these problems, continuous forming window (CFW) is obtained from a parametric study on the conditions of laser power and scanning velocity and the direct seed generation (DSG) method is proposed. Silver nano particles are uniformly generated in a metallic solution through the DSG method, which enables the decrease of a laser power to trigger the photoreduction of silver ions as well as the increase of metal contents in a metallic solution. So the two-photon induced photoreduction property of a metallic solution is improved. Through this work, precise silver patterns are fabricated with a minimum line width of 400 nm.

• 한국분말재료학회지
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• 제11권4호
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• pp.328-332
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• 2004

Fe nanopowders were successfully synthesized by plasma arc discharge (PAD) process using Fe rod. The influence of chamber pressure on the microstructure was investigated by means of X-ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The prepared particles had nearly spherical shapes and consisted of metallic cores (a-Fe) and oxide shells (Fe$_{3}$O$_{4}$), The powder size increased with increasing chamber pressure due to the higher dissolution and ejection rate of H$_2$ and gas density in the molten metal.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 공업화학
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• 제34권6호
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• pp.674-678
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• 2023

고정층 상압 유통식 반응기를 사용하여 Pt(1)-Fe(30)/MCM-41와 Fe(30)/MCM-41의 촉매상에서 메탄의 분해 반응을 수행하여 수소의 수율을 구하여 Pt의 효과를 조사하였다. XRD 분석으로 반응 전 Pt(1)-Fe(30)/MCM-41 촉매에서 Fe₂O₃와 Pt의 결정상이 나타났다. SEM, EDS 분석과 매핑 이미지로부터 촉매 표면상에 Fe, Pt, Si, O의 나노 입자들이 균일하게 분포함을 알 수 있었다. XPS 분석으로 Pt⁰, Pt²⁺, Pt⁴⁺, Ft⁰, Fe²⁺, Fe³⁺ 등의 이온과 O^2-, O^-의 산소종이 존재함을 알 수 있었고, Fe(30)/MCM-41 촉매에 Pt를 1 wt% 첨가하면 촉매 표면상에서 Fe2p의 원자 백분율이 13.39%에서 16.14%로 증가하고 Pt4f는 1.51%이었다. 수소의 수율은 Fe(30)/MCM-41보다 3.2배 높았다. Pt로부터 Fe로 H₂의 스필오버(spillover) 효과로 Fe 입자의 환원을 증가시키고, Fe, Pt와 MCM-41의 적당한 상호작용으로 미세한 나노입자를 촉매 표면상에 균일하게 분산을 증가시켜 수소수율을 향상시켰다.

• 공업화학
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• 제32권4호
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• pp.478-482
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• 2021

고정층 상압 유통식 반응기를 사용하여 Ln(1)-Ni(5)/SBA-15 (Ln = Dy, Eu, Pr, Tb) 촉매상에서 메탄의 부분 산화 반응을 수행하여 수소의 수율을 조사하였다. X-ray photoelectron spectroscopy (XPS) 분석으로 Ni(5)/SBA-15 촉매에 1 wt%의 Eu를 첨가함으로써 Eu(1)-Ni(5)/SBA-15의 O1s와 Si2p의 핵심 전자 수준의 화학적 이동이 있었으며, O1s, Ni2p_3/2, Si2p의 원자의 비가 1.284, 1.298, 1.058로 증가하였다. 촉매 표면상에 O^-, O^2-의 산소와 Eu³⁺, Ni⁰, Ni²⁺, Si⁴⁺의 이온이 존재함을 알 수 있었다. Eu(1)-Ni(5)/SBA-15 촉매상에서 수소의 수율은 57.2%이었으며, Ln(1)-Ni(5)/SBA-15 (Ln = Dy, Pr, Tb)보다 우수한 수소 수율을 보여주었고 25 h의 반응에서 안정된 촉매 활성을 유지하였다. Eu를 Ni(5)/SBA-15에 1wt%를 첨가함으로서 금속과 담체 간에 강한 상호 작용에 의한 SMSI 효과로 산소 빈자리를 만들고 촉매 표면상에 Ni⁰, N²⁺의 나노입자의 분산을 증가시켜 촉매 활성을 유지시켰다.

• 한국재료학회지
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• 제20권11호
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• pp.611-616
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• 2010

A cobalt oxide - tin oxide nanocomposite based gas sensor on an $SiO_2$ substrate was fabricated. Granular thin film of tin oxide was formed by a rheotaxial growth and thermal oxidation method using dc magnetron sputtering of Sn. Nano particles of cobalt oxide were spin-coated on the tin oxide. The cobalt oxide nanoparticles were synthesized by polymer-assisted deposition method, which is a simple cost-effective versatile synthesis method for various metal oxides. The thickness of the film can be controlled over a wide range of thicknesses. The composite structures thus formed were characterized in terms of morphology and gas sensing properties for reduction gas of $H_2$. The composites showed a highest response of 240% at $250^{\circ}C$ upon exposure to 4% $H_2$. This response is higher than those observed in pure $SnO_2$ (90%) and $Co_3O_4$ (70%) thin films. The improved response with the composite structure may be related to the additional formation of electrically active defects at the interfaces. The composite sensor shows a very fast response and good reproducibility.

• 접착 및 계면
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• 제20권3호
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• pp.102-109
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• 2019

PET기재 필름 위에 코팅된 다층박막 필름의 층별성분을 ATR FT-IR과 Pyro GC/MS(Gas Chromatography/Mass Spectroscopy)를 이용하여 분석을 시도하였다. 필름의 단면은 액체질소에 담근 후 파괴시켜 얻었으며 광학 현미경을 이용하여 관찰하였다. 이 결과 코팅층의 총 두께는 $70{\mu}m$였으며 3개의 층으로 관찰되었다. 각 층의 두께는 너무 얇기 때문에 표면층을 제외하고는 직접분석이 어려워 적절한 용매로서 각 층을 드러나게 한 후 ATR FT-IR과 pyro-GC/MS를 이용하여 분석을 시도하였다. 이 결과 3개 층은 공통적으로 우레탄-아크릴레이트 공중합체로 밝혀졌다. 또한 무기 혹은 금속성분의 첨가여부는 XPS와 SEM-EDAX를 이용하여 분석하였으며 도장층 (1)에는 나노크기의 실리카 입자가 도장층 (2)에서는 알루미늄 박편이 존재함을 알게 되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.