• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.341-341
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• 2011

최근 AMOLED 구동이 가능한 소자에 대한 연구가 활발히 진행중이다. AMOLED구동 가능소자는 LTPS TFT, a-Si TFT, OTFT, Oxide TFT가 있으며 그 중에서 현재 대부분 LTPS TFT를 사용하고 있다. LTPS TFT는 높은 전자 이동도와 안정성을 가지고 있기 때문에 현재 각광 받는 AMOLED에 잘 맞는다. 하지만 LTPS TFT는 고비용, 250$^{\circ}C$ 이상의 공정온도, Substrate가 Glass, Metal로 제한 된다는 문제점이 있으며, 균일성이 낮고 현재 대면적 기술이 부족한 상태이다. 해결방안으로 AMOLED를 타겟으로 하는 Oxide TFT 기술이 떠오르고 있다. Oxide TFT는 이동도가 높고 저온공정이 가능하며 Substrate로 Plastic 기판을 사용할 수가 있어 차후에 Flexible 소자로서의 적용이 가능하다. 또한 기존의 진공장비 사용대신 용액공정이 가능하여 장비사용시간 및 절차를 단축시킬 수 있어 비용적인 유리함을 가지고 있다. Oxide TFT는 단결정 산화물과 다결정 복합 산화물 두 가지 범주를 가지고 있다. Oxide TFT의 재료물질은 ZnO, ZTO, IZO, SnO2, Ga2O3, IGO, In2O3, ITO, InGaO3(ZnO)5, a-IGZO이 있다. 본 연구에서는 산화물질 중 하나인 ZTO를 이용하여 TFT 소자를 제작하였다. 산화물 특성상 열처리 온도에 따라 형성되는 결정의 정도가 다르기 때문에 온도 및 시간 변수에 따른 ZTO의 특성변화에 초점을 맞추어 연구함으로서 최적화된 조건을 찾고자 실험을 진행하였다. 실험을 위한 기판으로 n-type wafer을 사용하였다. PE-CVD 장비를 이용하여 SiNx를 120 nm 증착하고, ZTO 용액을 spin-coating을 이용하여 channel layer을 형성하였다. 균일하게 형성된 ZTO의 결정을 위하여 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$에서 1시간, 3시간, 6시간, 10시간의 온도 및 시간 변수를 두어 공기 중에서 열처리 하였다. ZTO는 약 30 nm 두께로 형성되었다. Thermal evaporator를 이용하여 Source, Drain의 알루미늄 전극을 형성하고, wafer 뒷면에는 Silver paste를 이용하여 Gate전극을 만들었다. 제작된 소자를 dark room temperature에서 측정하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.370-373
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• 2003

A search for a new phosphor composition of excellent performance in systematic ways requires lots of research efforts, and often turns out to be very timeconsuming and difficult. Thus, usually practical ways are taken to improve the performance of phosphors. A few examples of practical surface treatments on phosphors such as $In_2O_3$ coating on $ZnGa_2O_4:Mn$, phosphoric acid treatment on ZnS:Ag,Cl, and base KOH treatment with ultrasonication on ZnS:Ag,Cl are presented. The reasons for the improvement of luminescence intensity or degradation properties after these treatments are discussed based upon careful analyses on the surface of the phosphors and a proposed model on charge carriers generated by electron beam excitation.

• Membrane Journal
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• v.26 no.3
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• pp.205-211
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• 2016

Performance of pyrophyllite-based ceramic membranes newly developed were investigated. Membrane fouling caused by microbial suspensions taken from a full-scaled MBR system at domestic wastewater treatment plant was observed at different airflow rate and distance between each membrane. For the pyrophyllite support, pore size was about $1.0{\mu}m$, but surface coating with $Al_2O_3$ solution decreased the pore size with the reduction of the pure water permeability. With the MLSS taken from the full-scaled MBR system (6 g/L), the fouling rate was decreased by increasing airflow rate under $20L/m^2{\cdot}hr$ of setpoint flux. However, the effectiveness of the airflow rate on the fouling control depends strongly upon the gap between each membrane. At fixed airflow rate, the fouling rate was decreased by increasing the gap between each pyrophyllite membrane. Nevertheless, further increasing the membrane distance from 3.5 to 5.4 cm resulted in higher fouling rate. Similar result was observed with the $Al_2O_3$ coated-pyrophyllite membrane. Nevertheless, the fouling rate was lower with the coated membrane than that observed with the uncoated pyrophyllite support. Regardless of surface coating, the suspended solids were removed almost completely and the surface coating on the pyrophyllite support improved organic rejection with PEG solution (MW : 8000 kDa) tested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.9
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• pp.1035-1040
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• 2011

This research was performed on a microfilter made of a hybrid material (ceramic + metal) that was coated with ceramics on the metal-filter surface by using the thermal spray method. The ceramic powders used were $Al_2O_3+40TiO_2$ powder with a particle size of $20{\mu}m$ and $Al_2O_3$ (98%+)powder with a particle size of $45{\mu}m$. The metal filters were filter-grade $20{\mu}m$, $30{\mu}m$, and $50{\mu}m$ sintered metal powder filters (SIKA-R 20 IS, 30 IS, 50 IS; Sinter Metals Filters) and filter-grade $75{\mu}m$ sintered mesh filter with five layers. Ceramic-coated filters that were coated using the thermal spray method had a great influence on powder material, particle size, and coating thickness. However, these filters showed a fine performance when used as micro-filters.

• Composites Research
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• v.33 no.5
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• pp.235-240
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• 2020

In this study, in order to improve the impact resistance of the B₄C tile-inserted B₄C_p/Al7075 hybrid composite, a control method of the B₄C/Al7075 interface was developed and the characteristics of the controlled interface were analyzed. B₂O₃, Ni, and Si were coated on the B₄C tile surface using additional thermal oxidation, electroless plating, and plasma spraying. The coated B₄C tile is inserted into the B₄C_p/Al7075 composite material using the liquid pressurization method. Interfacial energy, bonding strength, and impact resistance were measured to analyze the effect of the coating. All coatings enhanced interfacial energy, bonding strength, and impact resistance, and in particular, it was confirmed that the impact resistance increased by 86.8% when B₂O₃ coating was used. This study is significant in developing and analyzing a core surface treatment method that improves the performance of B₄C/Al series composites, which are attracting attention as next-generation lightweight amour and bulletproof materials.

• Journal of Ocean Engineering and Technology
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• v.23 no.5
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• pp.85-91
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• 2009

A stainless steel that contains aggressive negative ion was known to decrease the corrosion resistance. Stainless steel with super corrosion resistance was developed for improvement of corrosion resistance. Super duplex stainless steel is widely used under sever environment because of good mechanical properties and corrosion resistance. Also, Super duplex stainless steel has long life in severe environments by showing the enough strength and corrosion resistance. But duplex stainless steel is not stabilized compared to austenite stainless steel in corrosion resistance. In this study, corrosion characteristic were investigated to super duplex stainless steel with additive 0.2% nitrogen with $SiO_2$ thin films coated or no coated by sol-gel method in 3.5% NaCl. From test results, corrosion current density in the heat-treated specimen for ${\sigma}$ phase precipitation was higher than that of different heat-treated specimen. Also, $SiO_2$ colloidal-coated specimen had not occurred almost corrosion.

• Membrane Journal
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• v.21 no.1
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• pp.62-71
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• 2011

Highly enriched oxygen is used in energy-efficient combustion due to decreased non-flammable nitrogen, while high purity nitrogen is used for explosion proof in the LNG ships and keeping the freshness of green stuffs. Membrane technology can be used in these $O_2$ and $N_2$ generation with low energy consumption. In this study, PES was used as a membrane material and 1-methyl-2-pyrollidone (NMP) and acetone were employed as a good solvent and nonsolvent addictive (swelling agent to PES), respectively. Dope solutions were prepared by changing the content of acetone (0, 6.5, 15, 25, 31.5 wt%) in 37 wt% PES solutions. Hollow fiber spinning was performed at 0~10 cm of air-gap distances for each dope solution. $O_2/N_2$ selectivity and permeability were investigated by comparing of hollow fibers coated or not by silicons. $O_2/N_2$ selectivity increased and permeance of $O_2$ and $N_2$ decreased with increasing air-gap height independently of acetone addictions. Optimized PES hollow fibers were obtained with 37/6.5/56.5 wt% PES/acetone/NMP dope solution and 10 cm air-gap, which showed 7.3 of $O_2/N_2$ selectivity and 4.3 GPU of $O_2$ permeability after silicon coating.

• Progress in Superconductivity
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• v.5 no.1
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• pp.84-87
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• 2003

$YBa_2$$Cu_3$$O_{7-x}$ (YBCO) thin films were fabricated by MOD-TFA process via dip-coating method on LaAlO$_3$, (LAO) single crystalline substrates. In this study, we investigated effect of annealing temperature and solvent on the microstructure and texture of YBCO thin films. The precursor films were annealed at various temperature to improve surface morphologies and phase purities. It was shown that the films annealed at relatively lower and higher temperature exhibit low phase purity and crystallinity. The effect of various solvents on surface morphologies and second phase has been investigated.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.