• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.444-444
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• 2008

For the polymer tandem cell, simple and advantaged solution-based method to electron transport intermediate layer is presented which are composed $TiO_2$ nanoparticles. Device were based on a regioregular Poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl $C_{61}$ butyric acid methyl ester($PC_{60}BM$) blend as a donor and acceptor bulk-heterojunction. For the middle electrode interlayer, the $TiO_2$ nanoparticles were well dispersed in ethanol solution and formed thin layer on the P3HT:PCBM charge separation layer by spin coating. The layer serves as the electron transport layer and divides the polymer tandem solar cell. The open-circuit voltage (Voc) for the polymer tandem solar cells was closed to the sum of those of individual cells.

• Progress in Superconductivity and Cryogenics
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• v.6 no.1
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• pp.12-17
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• 2004

High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.403-409
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• 1992

The titania membrane thickness coated on the porous alumina support by the sol-gel method was analyzed using the slipcasting model. The thickness of calcined membrane layers increased linearly from 1.3 to 3.8 ${\mu}{\textrm}{m}$ with the square root of the dipping time (4~40 min). Growth rates of the thickness of wet gels and calcined layers were well described quantitatively by the slipcasting model. Through the regression of experimental data using model equations, the permeability and the pressure drop across wet gels, and the thickness and their growth rate constants of wet gels and calcined layers could be determined. It was also known that the gellation concentration of the TiO2 sol used in this work and the porosity of wet gel layes were 25 mol/ι and 0.53, respectively.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2523-2528
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• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.687-690
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• 2004

Fabrication and characterization of dye-sensitized TiO2 solar cells(DSSC) consisting of spray-coated TiO2 electrode, an electrolyte containing I-/I3- redox couple, and a Pt-coated counter electrode carried out, using mainly FE-SEM and solar simulator. Also, effect of rapid thermal annealing(RTA) temperatue on I-V curves of DSSCS consisting of approximately 10m thickness and $5{\times}5mm2$ active area. No significant difference in the apparent size of TiO2 clusters was observed with increasing RTA temperature. Also, an open circuit voltage(Voc) of approximately 0.70V and a short-circuit photocurrent(Jsc) of 8 to 12mA/cm2 were observed in the TiO2 solar cell. With increasing RTA temperature upto 550oC, photocurrent density of dye-sensitized solar cells was enhanced, leading to enhancing the efficiency of dye-sensitized solar cells having Pt-electroplated counter electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.116-119
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.53-58
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• 2013

Superhydrophobic $SiO_2$ layers with a micro-nano hierarchical surface structure were prepared. $SiO_2$ layers deposited via an electrospray method combined with a sol-gel chemical route were rough on the microscale. Au particles were decorated on the surface of the microscale-rough $SiO_2$ layers by use of the photo-reduction process with different intensities ($0.11-1.9mW/cm^2$) and illumination times (60-240 sec) of ultraviolet light. With the aid of nanoscale Au nanoparticles, this consequently resulted in a micro-nano hierarchical surface structure. Subsequent fluorination treatment with a solution containing trichloro(1H,2H,2H,2H-perfluorooctyl)silane fluorinated the hierarchical $SiO_2$ layers. The change in surface roughness factor was in good agreement with that observed for the water contact angle, where the surface roughness factor developed as a measure needed to evaluate the degree of surface roughness. The resulting $SiO_2$ layers revealed excellent repellency toward various liquid droplets with different surface tensions ranging from 46 to 72.3 mN/m. Especially, the micro-nano hierarchical surface created at an illumination intensity of $0.11mW/cm^2$ and illumination time of 60 sec showed the largest water contact angle of $170^{\circ}$. Based on the Cassie-Baxter and Young-Dupre equations, the surface fraction and work of adhesion for the micronano hierarchical $SiO_2$ layers were evaluated. The work of adhesion was estimated to be less than $3{\times}10^{-3}N/m$ for all the liquid droplets. This exceptionally small work of adhesion is likely to be responsible for the strong repellency of the liquids to the micro-nano hierarchical $SiO_2$ layers.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.409-416
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• 1994

A double layered photoreceptor using phthalocyanine dye was made by dip-coating method. The under cutting layer(UCL) was coated with A1$\_$2/O$\_$3/ or polyamide, and the charge generation layer(CGL) was formed by .tau.-type metal-free phthalocyanine. The oxadiazole was used as a charge transport layer(CTL) and polycarbonate and poly(vinyl butyral) was employed as a host polymer. The .tau.-H$\_$2/Pc had an absorption peak around 780nm, which coincided with the emitting wavelengths of GaAlAs diode lasers. Maximum charge acceptance of CTL that gives thickness of 12.mu.m was -900V by corona charge of -6.0kV. In photo-induced discharge measurements, residual potential was less than -20V and sufficient for ordinary use, and sample films using of poly(vinyl butyral) was showed good charge retention. In printing test, drum that was employed polycarbonate as a host polymer showed the good print quality.