• Journal of Ecology and Environment
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• v.45 no.4
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• pp.174-181
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• 2021

Background: Euphorbia jolkinii Boiss. is a perennial species native to Jeju Island and the southern coastal area of Korea. Particularly on Jeju Island, the yellow flowers of E. jolkinii Boiss. have a high ornamental value because of their contrast with basalt. This study was conducted to investigate the effects of different temperatures (5, 15, 20, and 25 ℃) and gibberellic acid (GA₃) concentrations (0, 10, 100, or 1000 mg/L) on seed dormancy and germination of E. jolkinii. In addition, we classified the seed dormancy type and compared types with those of other species in the same genus. Results: The number of seeds with viable embryos and endosperms was approximately 66%. The final germination percentages at 5, 15, 20, and 25 ℃ were 51.7%, 83.5%, 2.6%, and 0.0%, respectively. In GA₃ concentration experiments, the final germination percentages of 0, 10, 100, and 1000 mg/L were 83.5%, 91.7%, 79.1%, and 83.4%, respectively, at 15 ℃ conditions, and 0.0%, 6.9%, 13.2%, and 27.3%, respectively, at 25 ℃. Conclusions: Germination improved at temperatures of 15 ℃ or lower. Furthermore, GA₃ treatment effectively reduced germination times. Thus, the seeds of E. jolkinni were classified as having non-deep physiological dormancy.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1679-1685
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• 1989

In this paper, a new design of GaAs level converter is proposed, and anlyzed wth the variation of the threshold voltage of E/D MESFETs. The threshold voltage ranges analyzed are -0.05V to 0.35V for enhancement type MESFETs and -0.3V to -0.7V for depletion type MESFETs. In this range, the variation of the input characteristics of the conventional level converter designed to convert the level of DCFL using Vss of -0.8V to that of -0.2V, is greather than 600mV, but of the level converter proposed here is less than 100mV.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.127-137
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• 1995

Anomalously large real space charge transfer through thick barries in GaAs asymmetric double quantum wells is studied by photoluminesence exitation. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is GaAs/AlAs digital alloy with an equivalent Al concentration of 0.28. These resilts combined with observed x and barrier thickness depence suggest that the spatial fluctuation of the atomic arrangment of Ga and Al in the alloy may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions which takes into account the side fluctuation effects.

• Horticultural Science & Technology
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• v.29 no.6
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• pp.555-560
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• 2011

The objective of this study was carried out to investigate the proper plant growth regulator for increasing the number of flower, fruit set, and to enlarge the size of the berries in Ardisia pusilla. Flower bud formation was used rooted cutting, and fruit set, enlargement, and coloration of fruit were used with two years-old. $GA_3$ concentrations were treated with 0, 100, 200, or $400mg{\cdot}L^{-1}$. Flower bud formation was effective in $400mg{\cdot}L^{-1}$ $GA_3$ and it was 1.8 times greater than control. Plant growth regulators were applied by foliar spray at full bloom stage to increase the fruit set. As a result, $GA_3$ was the most effective for increasing fruit set. Also, auxins of 4-CPA (Tomatotone, Donbu hitech Co., Korea) and dichloprop triethanol amine (Antifall, Bayer Crop Science Co., Ltd., Korea) were effective. When $GA_3$ concentrations of 0.5 and $1.0mg{\cdot}L^{-1}$ were used, fruit set (%) reached to 70% and 77%, respectively. Effectiveness of $GA_3$ was 1.8 times greater than control. Also, auxins, dichloprop triethanol amine increased to about 7-12% during fruit setting, but cytokinin and anti-gibberellin were ineffective. To investigate the fruit enlargement and coloration, $GA_3$ was treated with 0.3, 0.6, and $1.2mg{\cdot}L^{-1}$. Fruit enlargement was achieved to about 15% by $GA_3$ $0.6mg{\cdot}L^{-1}$ when $GA_3$ was treated 3 times at the interval of 1 month per treatment when fruit size was about 2-3mm (after full-blooming two months). But anthocyanin contents for coloration of fruit skin were not significant according to $GA_3$ concentration. The results showed that $GA_3$ enhanced bud formation, fruit set and enlargement of fruit size in Ardisia pusilla.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.94-101
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• 1989

Transport properties of 2DEG at AlGaAs/GaAs interface such as average electron energy, flight distance, each valley occupancy ratio, average electron velocity for various fields are investigated by MONTE-CARLO method. As the electric field increases, more electrons transit drastically from (000) valley to (000) upper valley. This phenomenon shows the nonstationary effect such as velocity overshoot. The duration of the transient decreases from about 1.4 psec for electric field E = 7KV/cm to about 0.7 psec for 12KV/cm. The average electron velocity during transient transport in 2DEG is about 8 times the steady-state velocity for E = 12KV/cm at room temperature. In comparison with bulk GaAs the peak velocity in the 2DEG is higher than that in even pure bulk GaAs at electric field E = 7 KV/cm. On the basis of the fact that the electrons in the 2DEG have larger peak velocity and shorter transient time of velocity than those in the bulk GaAs, it is suggested that the device with 2DEG may obtain higher mobility than that with bulk GaAs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.752-758
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• 2004

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.164-164
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• 2011

본 연구에서는 InAs 양자점 태양전지의 활성영역에 크기가 다른 양자점을 삽입하여 그 광학적 특성변화를 photoreflectance (PR)와 photoluminescence (PL)를 이용하여 연구하였다. 본 연구에 사용된 InAs 양자점 태양전지 구조는 n+-GaAs (100) 기판 위에 n+-GaAs buffer를 300 nm 성장 후 활성영역에 InAs 양자점과 40 nm 의 n-GaAs spacer를 이용하여 8층의 양자점을 삽입하였다. 그 위에 n-GaAs $1.14{\mu}m$와 p+-GaAs $0.6{\mu}m$, p+-AlGaAs window를 50 nm 성장하고 ohmic contact을 위하여 p+-GaAs 10 nm 성장하였다. 활성영역에 사용된 InAs 양자점의 크기는 InAs 조사량을 1.7 ML~3.0 ML까지 변화시키며 조절하였다. 양자점 태양전지의 활성영역에 삽입한 양자점의 크기에 따른 photoreflectance 측정에서 InAs 조사량이 0~2 ML 사이에서는 Franz-Keldysh oscillation (FKO)의 주기가 짧아지고 2.5 ML 이상에서는 일정한 값 가짐을 보였다. 이는 양자점의 크기가 커질수록 내부 응력에 의한 전기장의 변화에 의한 것으로 사료된다. 아울러 InAs 양자점 태양전지의 photoluminescence 측정 결과 상온에서 1.35 eV 근처에 발광이 관측되었으며 InAs 조사량이 증가할수록 발광중심 낮은 에너지쪽으로 이동함을 보였으며 태양전지 효율은 2.0 ML 인 경우 최고치를 나타내었다. InAs 조사량을 2.0 ML 이상 증가 시킨 경우는 효율이 점진적으로 감소하였다.

• Microbiology and Biotechnology Letters
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• v.2 no.3
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• pp.141-147
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• 1974

The cultural conditions for L-glutamate production were investigated using Brevibacterium flavum nov. sp. D2209B, the most productive strain among 5 strains reported in preceeding paper. A temperature of 3$0^{\circ}C$ and a medium volume of 30 ml per 500-flask were selected as standard culture conditions. And the following results were obtained. 1. When the concentration of acetate in the medium was below 30 g per litre, the maximum amount of L-glutamate was accumulated. 2. KH$_2$PO$_4$, MgSO$_4$, FeCI$_3$ and MnCI$_2$ were required for the L-glutamate poduction, but the concentration of those inorganic salts little effected. 3. Signifcant amount of L-glutamate was accutnulated in the limited biotin concentration less than 0.3 ug per litre. 4. The addition of malic acid or succinic acid enhanced the accumulation. 5. The L-glutamate accumulation was related to the incubation time of seed; the amount of L-glutamate accumulated was maximum by inoculating 16-20 hour incubated seed. 6. In the medium containing sufficient amount of biotin for growth, L-glutamate accumulation was stimulated by the addition of penicillin at appropreate time during incubation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.492-498
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• 2003

In this paper, We analyze the optimum bias conditions of cascode coupled microwave mixer for maximum conversion gain mixer. Microwave self-oscillating mixer by two GaAs MESFET cascode coupled, to upper GaAs MESFET operating as a oscillator with high Q dielectric resonator and the lower GaAs MESFET operated as a mixer with low noise and high conversion characteristics. As a result of experiments, cascode coupled microwave self oscillating mixer according to optimun bias shows an 5.92 dBm oscillating power, -132.0dBc/Hz @ 100KHz at 5.15GHz and 3dB conversion loss.