• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2273-2279
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• 2012

동시진공증발법(co-evaporation)으로 Cu(In,Ga)$Se_2$ 박막을 제작하는 논문으로서 1단계($1^{st}$-stage)에서 기판온도(substrate temperature)가 $400^{\circ}C$에서 $In_2Se_3$상($In_2Se_3$ phase)이 존재하였으며 2,3단계($2^{nd}$-stage, $3^{rd}$-stage)에서 기판온도 변화에 따른 흡수 스펙트럼(absorbency spectrum)은 차이가 크지 않다. 이것은 박막의 두께가 전부 $1{\mu}m$ 이상이므로 흡수 스펙트럼(absorbency spectrum)은 거의 차이가 없다. 2,3단계에서 기판온도 변화에 따른 SEM과 XRD를 분석한 결과, 기판온도가 증가할수록 결정구조(crystal structure)의 밀도(density)가 증가하고 기공(vacancy)이 감소하며 $480^{\circ}C$, $500^{\circ}C$에서 Cu(In0.7Ga0.3)$Se_2$상(${\mu}m$)이 형성되었다.

• 한국표면공학회지
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• 제36권5호
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• pp.418-422
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• 2003

평판형 유도결합 플라즈마 식각장비(inductively coupled plasma etcher)를 이용하여 각종 공정조건들에 따른 GaAs의 식각특성을 연구하였다. 공정변수들은 ICP 소스파워(0-500 W), RIE 척파워(0-150 W), 가스 종류($BCl_3$, $BCl_3$/Ar, $BCl_3$/Ne) 및 가스혼합비였다. $BCl_3$ 가스만을 이용하여 GaAs를 식각한 경우보다 25%의 Ar이나 Ne같은 불활성 기체를 혼합한 $15BCl_3$/5Ar, $15BCl_3$/5Ne 가스를 이용한 경우의 식각률이 더 우수한 것을 확인하였다. 그리고 50% 이하의 Ar이 혼합된 $BCl_3$/Ar의 경우는 높은 식각률 (＞4,000 $\AA$/min)과 평탄한 표면(RMS roughness : ＜2 nm)을 얻을 수 있었지만 지나친 양(＞50%)의 Ar의 혼합은 오히려 표면을 거칠게 하거나 식각률을 떨어뜨리는 결과를 가져왔다. 그리고 20 sccm $BCl_3$, 100 W RIE 척파워, 300 W ICP 소스파워, 공정압력이 7.5 mTorr인 조건에서의 GaAs의 식각결과는 아주 우수한 특성(식각률: ∼ 4,000, $\AA$/min, 우수한 수직측벽도: ＞$87^{\circ}$, 평탄한 표면: RMS roughness : ∼0.6 nm)을 나타내었다.

• 대한약침학회지
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• 제13권3호
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• pp.63-71
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• 2010

Objectives: Gallic acid (GA) is the major component of tannin which could be easily founded in various natural materials such as green tea, red tea, grape juice, and Corni Fructus. The purpose of this study is to investigate the effect of Gallic acid (GA) on production of interleukin (IL) in mouse macrophage Raw 264.7 cells stimulated by lipopolysaccharide (LPS). Methods: Productions of interleukins were measured by High-throughput Multiplex Bead based Assay with Bio-plex Suspension Array System based on $xMAP^{(R)}$ (multi-analyte profiling beads) technology. Firstly, cell culture supernatant was obtained after treatment with LPS and GA for 24 hour. Then, it was incubated with the antibody-conjugated beads for 30 minutes. And detection antibody was added and incubated for 30 minutes. And Strepavidin-conjugated Phycoerythrin (SAPE) was added. After incubation for 30 minutes, the level of SAPE fluorescence was analyzed on Bio-plex Suspension Array System and concentration of interleukin was determined. Results: The results of the experiment are as follows. 1. GA significantly inhibited the production of IL-3, IL-10, IL-12p40, and IL-17 in LPS-induced mouse macrophage RAW 264.7 cells at the concentration of 25, 50, 100, 200 uM (p<0.05). 2. GA significantly inhibited the production of IL-6 in LPS-induced mouse macrophage RAW 264.7 cells at the concentration of 50, 100, 200 uM (p<0.05). 3. GA diminished the production of some cytokine such as IL-4, IL-5, and IL-13 in LPS-induced mouse macrophage RAW 264.7 cells. 4. GA did not show the inhibitory effect on the production of IL-$1{\alpha}$ and IL-9 in LPS-induced mouse macrophage RAW 264.7 cells. Conclusions: These results suggest that GA has anti-inflammatory activity related with its inhibitory effects on the production of interleukins such as IL-3, IL-10, IL-12p40, IL-17, and IL-6 in LPS-induced macrophages.

• 전자공학회논문지D
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• 제35D권5호
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• pp.40-47
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• 1998

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

• 전자공학회논문지D
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• 제34D권5호
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• pp.7-13
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• 1997

A X-band 3-stage monolithic LNA (low noise amplifier) with series feedback has been successfully desined and demonstrated by suign 0.5-$\mu\textrm{m}$ GaAs MESFET. In the design of the 3-stage LNA, the effects of series feedback to the noise figure, the gain, and the stability have been investigated ot find the optimal short stub length. As a result, the inductive series feedback topology which has 10degree short stub in the GaAs MESFET source lead, has been employed in the 1-st stage. The fabricated MMIC LNA's chip size is only 1mm$^{2}$/stage, which is smaller than the previously reported X-band MMIC input/output return losses are less than -10dB and -15dB, respectively. The noise figure (NF) is less than 2.6dB. The measured data show good agreement with the simulated values.

• Journal of Microbiology and Biotechnology
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• 제20권12호
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• pp.1744-1749
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• 2010

The role of endophytic fungi in plant growth and development is well documented. However, endophytic fungi with growth promotion capacity have never been isolated from weeds previously. In the current study, we isolated 8 fungal endophytes from the roots of Monochoria vaginalis, a serious weed of rice paddy in Korea. These isolates were screened on Waito-C, in order to identify plant growth promoting metabolites. Two fungal isolates (M5.A & M1.5) significantly promoted the plant height and shoot length of Waito-C during preliminary screening experiments. The culture filtrates (CFs) of M5.A and M1.5 also promoted the shoot length of Echinocloa crusgalli. Gibberellins (GAs) analysis of the CFs of M5.A and M1.5 showed that these endophytic fungi secrete higher quantities of GAs as compared with wild-type G. fujikuroi KCCM12329. The CF of M5.A contained bioactive GAs ($GA_3$, 2.8 ng/ml; $GA_4$, 2.6 ng/ml, and $GA_7$, 6.68 ng/ml) in conjunction with physiologically inactive $GA_9$ (1.61 ng/ml) and $GA_{24}$ (0.18 ng/ml). The CF of M1.5 contained physiologically active GAs ($GA_3$, 1.64 ng/ml; $GA_4$, 1.37 ng/ml and $GA_7$, 6.29 ng/ml) in conjunction with physiologically inactive $GA_9$ (3.44 ng/ml), $GA_{12}$ (0.3 ng/ml), and $GA_{24}$ (0.59 ng/ml). M5.A and M1.5 were identified as new strains of Penicillium sp. and Aspergillus sp., respectively, based on their 18S rDNA sequence homology and phylogenetic analysis.

• 현장농수산연구지
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• 제7권1호
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• pp.90-96
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• 2005

GA₃ 침지시간과 농도에 따른 출현소요일수는 GA₃ 처리가 무처리에 비하여 1.1~4.0일 단축되었으며 생육특성도 GA₃ 처리가 양호한 경향이었으나 GA₃ 침지 시간과 농도에 따른 차이는 적었다. 개화소요일수는 GA₃ 처리가 무처리보다, 30분 침지가 10초 침지보다, 그리고 농도가 높을수록 단축되었으나 화경장, 화경폭, 화고 및 화폭 등은 처리간 차이가 없었다. 또한 개화수는 GA₃ 농도에 따른 효과가 커서 250~500 mg·L^-1 처리가 4.0~4.3개로 최고 2배 많았으나 GA₃ 침지 시간에 따른 개화수 차이는 크지 않았다. 정상화율과 구근비대상황은 침지시간 및 농도에 관계없이 비슷하였다. 이로써 GA₃ 처리는 개화수 증가를 위해 반드시 필요하며 침지시간에 상관없이 처리농도는 250~500mg·L^-1가 적당할 것으로 판단된다.

• 한국레이저가공학회지
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• 제7권3호
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• pp.47-50
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• 2004

In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.

• 한국세라믹학회지
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• 제36권10호
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• pp.1056-1061
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• 1999

Phase formation and oxygen ion conduction of La(Ba)Ga(Mg)O3-$\delta$ system was studied, BaLaGa3O7 and BaLaGaO4 formed as a secondary phase above the solubility limit of Ba2+ in La3+ sites. The oxygen ionic conductivity of La(Ba)Ga(Mg)O3-$\delta$ was 0.1 S/cm 80$0^{\circ}C$ The activation energy of the oxygen ion conduction was dependent on temperature. This value was higher at low temperature than at high temperature.