• East Asian mathematical journal
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• v.34 no.5
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• pp.643-649
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• 2018

Let M be a connected n-dimensional submanifold of a Euclidean space $E^{n+k}$ equipped with the induced metric and ${\Delta}$ its Laplacian. If the position vector x of M is decomposed as a sum of three vectors $x=x_1+x_2+x_0$ where two vectors $x_1$ and $x_2$ are non-constant eigenvectors of the Laplacian, i.e., ${\Delta}x_i={\lambda}_ix_i$, i = 1, 2 (${\lambda}_i{\in}R$) and $x_0$ is a constant vector, then, M is called a 2-type submanifold. In this paper we proved that a connected 2-type hypersurface M in $E^{n+1}$ whose postion vector x satisfies ${\langle}{\Delta}x,x-x_0{\rangle}=c$ for a constant c, where ${\langle}$, ${\rangle}$ is the usual inner product in $E^{n+1}$, is of null 2-type and has constant mean curvature and scalar curvature.

• Journal of the Korean Mathematical Society
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• v.45 no.5
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• pp.1393-1404
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• 2008

Let K be a nonempty closed convex subset of a Banach space E. Suppose $\{T_{n}\}$ (n = 1,2,...) is a uniformly asymptotically regular sequence of nonexpansive mappings from K to K such that ${\cap}_{n=1}^{\infty}$ F$\(T_n){\neq}{\phi}$. For $x_0{\in}K$, define $x_{n+1}={\lambda}_{n+1}x_{n}+(1-{\lambda}_{n+1})T_{n+1}x_{n},n{\geq}0$. If ${\lambda}_n{\subset}[0,1]$ satisfies $lim_{n{\rightarrow}{\infty}}{\lambda}_n=0$, we proved that $\{x_n\}$ weakly converges to some $z{\in}F\;as\;n{\rightarrow}{\infty}$ in the framework of reflexive Banach space E which satisfies the Opial's condition or has $Fr{\acute{e}}chet$ differentiable norm or its dual $E^*$ has the Kadec-Klee property. We also obtain that $\{x_n\}$ strongly converges to some $z{\in}F$ in Banach space E if K is a compact subset of E or there exists one map $T{\in}\{T_{n};n=1,2,...\}$ satisfy some compact conditions such as T is semi compact or satisfy Condition A or $lim_{n{\rightarrow}{\infty}}d(x_{n},F(T))=0$ and so on.

• Journal of the Chungcheong Mathematical Society
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• v.30 no.3
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• pp.337-340
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• 2017

In this article, we present characterizations of the power distribution via the identical hazard rate of lower record values that $X_n$ has the power distribution if and only if for some fixed n, $n{\geq}1$, the hazard rate $h_W$ of $W=X_{L(n+1)}/X_{L(n)}$ is the same as the hazard rate h of $X_n$ or the hazard rate $h_V$ of $V=X_{L(n+2)}/X_{L(n+1)}$.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.6
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• pp.1213-1222
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• 2018

The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• Bulletin of the Korean Mathematical Society
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• v.21 no.2
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• pp.67-75
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• 1984

Let X be a topological space. We consider a groupoid G over X and the quotient groupoid G/N for any normal subgroupoid N of G. The concept of groupoid (topological groupoid) is a natural generalization of the group(topological group). An useful example of a groupoid over X is the foundamental groupoid .pi.X whose object group at x.mem.X is the fundamental group .pi.(X, x). It is known [5] that if X is locally simply connected, then the topology of X determines a topology on .pi.X so that is becomes a topological groupoid over X, and a covering space of the product space X*X. In this paper the concept of the locally simple connectivity of a topological space X is applied to the groupoid G over X. That concept is defined as a term '1-connected local subgroupoid' of G. Using this concept we topologize the groupoid G so that it becomes a topological groupoid over X. With this topology the connected groupoid G is a covering space of the product space X*X. Further-more, if ob(.overbar.G)=.overbar.X is a covering space of X, then the groupoid .overbar.G is also a covering space of the groupoid G. Since the fundamental groupoid .pi.X of X satisfying a certain condition has an 1-connected local subgroupoid, .pi.X can always be topologized. In this case the topology on .pi.X is the same as that of [5]. In section 4 the results on the groupoid G are generalized to the quotient groupoid G/N. For any topological groupoid G over X and normal subgroupoid N of G, the abstract quotient groupoid G/N can be given the identification topology, but with this topology G/N need not be a topological groupoid over X [4]. However the induced topology (H) on G makes G/N (with the identification topology) a topological groupoid over X. A final section is related to the covering morphism. Let G$_{1}$ and G$_{2}$ be groupoids over the sets X$_{1}$ and X$_{2}$, respectively, and .phi.:G$_{1}$.rarw.G$_{2}$ be a covering spimorphism. If X$_{2}$ is a topological space and G$_{2}$ has an 1-connected local subgroupoid, then we can topologize X$_{1}$ so that ob(.phi.):X$_{1}$.rarw.X$_{2}$ is a covering map and .phi.: G$_{1}$.rarw.G$_{2}$ is a topological covering morphism.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.1
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

• Journal of applied mathematics & informatics
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• v.27 no.3_4
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• pp.829-842
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• 2009

Let {$X_{ni}|1\;{\le}\;i\;{\le}\;n$, $n\;{\ge}\;1$} be an array of rowwise negatively associated random variables and let $\alpha$ > 1/2, 0 < p < 2 ${\alpha}p\;{\ge}\;1$. In this paper we discuss $n^{{\alpha}p-2}h(n)$ max $_{1\;{\le}\;k{\le}n}\;|\;{\sum}^k_{i=1}\;X_{ni}|/n^{\alpha}\;{\to}\;0$ completely as $n\;{\to}\;{\infty}$ under not necessarily identically distributed with a suitable conditions and h(x) > 0 is a slowly varying function as $x\;{\to}\;{\infty}$. In addition, we obtained that $n^{{\alpha}p-2}h(n)$ max $_{1\;{\le}\;k{\le}n}\;|\;{\sum}^k_{i=1}\;X_{ni}|/n^{\alpha}\;{\to}\;0$ completely as $n\;{\to}\;{\infty}$ if and only if $E|X_{11}|^ph(|X_{11}|^{1/\alpha})\;<\;{\infty}$ and $EX_{11}\;=\;0$ under identically distributed case and some corollaries are obtained.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.341-346
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• 2010

In this paper, anti-reflection coating was investigated for decreasing the reflection in visible range of 400~650 [nm] through four staked layers of $Si_xO_y$ and $Si_xN_y$ thin films prepared by reactive sputtering method. Si single crystal of 6 [inch] diameter was used as a sputtering target. Ar and $O_2$ gases were used as sputtering gases for reactive sputtering for the $Si_xO_y$ thin film, and Ar and $N_2$ gases were used for reactive sputtering for the $Si_xN_y$ thin film. DC pulse power of 1900 [W] was used for the reactive sputtering. Refractive index and deposition rate were 1.50 and 2.3 [nm/sec] for the $Si_xO_y$, and 1.94 and 1.8 [nm/sec] for the $Si_xN_y$ thin film, respectively. Considering the simulation of the four layer anti-reflection coating structure with the above mentioned films, the $Si_xO_y-Si_xN_y$ stacked four-layer structure was prepared. The reflection measurement result for that structure showed that a "W" shaped anti-reflection was obtained successfully with a reflection of 1.7 [%] at 550 [nm] region and a reflection of 1 [%] at 400~650 [nm] range.