• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2005년도 추계 학술발표회 제17권2호
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• pp.137-140
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• 2005

This paper focuses on the premature failure of RC beams bonded with FRP. A number of failure modes for RC beams bonded with FRP have been observed in numerous experimental studies during past decade. Particularly, Rip-off failure and Debonding failure were majority failure modes in RC beams bonded with FRP. Rip-off failure occurred at the plate end due to high interfacial shear and normal stresses however Debonding failure was caused by the yielding of reinforcing bar and the increasing of shear deformation in shear span. On the basis of premature failure mechanism in RC beams bonded with FRP, Basic strengthening length and Premature failure criteria were derived

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.15-19
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• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 대한기계학회논문집B
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• 제28권2호
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• pp.160-166
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• 2004

Combustion using oxygen enriched air is known as a technology which can increase flame stability as well as thermal efficiency due to improving the burning rate. Lift-off, blowout limit and flame length were examined as a function of jet velocity, coflow velocity and OEC(Oxygen Enriched Concentration). Blowout limit of the flame below OEC 25% decreased with increase of coflow velocity, but the limit above OEC 25% increased inversely. Lift-off height decreased with increase of OEC. In particular, lift-off hardly occurred in the condition above OEC 40%. Flame length of the flames above OEC 40% was increased until the blowout occurred. Great flame stability was obtained since lift-off and blowout limit significantly increased with increase of OEC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Korean Chemical Engineering Research
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• 제48권6호
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• pp.737-740
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• 2010

높은 누설 전류와 문턱 전압의 이동은 비정질 실리콘(a-Si:H) 트랜지스터(TFT)의 단점이다. 이러한 특성은 게이트 절연체와 활성층 박막의 막 특성, 표면 거칠기와 공정 조건에 따라 영향을 받는다. 본 연구의 목적은 누설 전류와 문턱 전압의 특성을 개선하는데 목적이 있다. 게이트 절연체의 공정 조건에 대해서는 질소를 증가한 증착 공정 조건을 적용하였고, 활성층의 공정 조건에 대해서는 산소를 증가한 공정 조건을 적용하여 전자 포획을 감소시키고 박막의 밀도를 증가시켰다. $I_{off}$는 $65^{\circ}C$ 조건하에서 1.01 pA에서 0.18pA로, ${\Delta}V_{th}$는 -1.89 V에서 -1.22V로 개선되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• 품질경영학회지
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• 제16권1호
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• pp.23-31
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• 1988

This paper studies the handling of significant digits and rounding off methods in domestic industries. ANOVA tables made by six well-known big companies are selected and analyzed. There exist various mistakes in handling of significant digits and rounding off methods such as: * too many significant digits in the Sum of Squares values in comparison to the original data * too many significant digits in the variance ratio in comparison to the F table values. * no consistancy in the number of significant digits * no consideration for the number of significant digits in computations * ignoring the KS A 0021 in rounding off methods etc. Such mistakes are caused from the characteristics of the personal computers rather than the misunderstandings about the significant digits conception. A subroutine is developed for PC in BASIC language to help the handling of significant digits and rounding off.

• 한국통신학회논문지
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• 제25권1B호
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• pp.62-70
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• 2000

본 논문에서는 지능형 차량에서 사용되는 레이더 센서 사이의 상호 간섭 억제 방법을 제안한다. 이 연구는 표준화된 펄스형 레이더에서 동기형 간섭 신호의 억제 방안에 관한 것이다. 레이더 펄스의 방사는 ON-OFF 제어되며, OFF 구간에서 수신된 간섭 신호는 각 레이진 별로 분석되어 저장되며 이를 이용하여 ON 구간에서의 거짓 반사파의 위치를 예측하며, 이로써 ON 구간에서의 동기형 간섭 신호를 제거한다. I-Q 변복조 방식의 레이더 시스템에서, Rayleigh 분포와 Rician 분포의 잡음에서의 오경보 확률과 미탐지 확률을 유도하였다. 펄스 신호 유무의 판별 시의 임계값을 적응적으로 조절함으로써 오경보 확률은 감소시키고 미탐지 확률의 저하를 억제하는 방법을 제시하였으며, 시뮬레이션 결과 오경보 확률은 최고 10\sup 4\배 감소하였고 미탐지 확률의 저하는 무시할 정도였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.135-135
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• 2009

In this work we compared the electrical characteristic of single gate and dual gate in MIC-TFT. We fabricated p-channel TFTs based on MIC structure. In mobility, dual gate ($61.35cm^2/Vsec$) got a higher value than single gate ($55.96cm^2/Vsec$). In $I_{on}/I_{off}$ dual gate ($6.94{\times}10^6$) got a higher value than single gate ($1.72{\times}10^6$) too. In $I_{off}$, dual gate got a lower value than single gate. Therefore, dual gate is good and less power consumption than single gate.