• 제목/요약/키워드: $HoMnO_3$

검색결과 310건 처리시간 0.02초

HoMnO3 박막의 강유전 특성의 결정상 의존성 (Dependence of Ferroelectric Properties on the Crystalline Phases of HoMnO3 Thin Film)

  • 김응수;강동호
    • 한국재료학회지
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    • 제16권6호
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    • pp.394-399
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    • 2006
  • Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

CoO가 첨가되지 않은 스피넬계 흑색안료의 합성 (Synthesis of Cobalt Oxide Free Black Color Spinel Pigment)

  • 김준호;이성호;서만철;이병하
    • 한국세라믹학회지
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    • 제44권11호
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    • pp.639-644
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    • 2007
  • Spinel pigments, developing black color in high temperature glazes at oxidation or reduction atmosphere, without CoO because of its high price were synthesized by solid solution method. Ten mixed compositions consisted of NiO, MnO, $Fe_2O_3 and $Mn_2O_3$ were fired at $1250^{\circ}C$ for 1h. The resulting pigments were characterized by using XRD, FT-IR, SEM and UV-vis spectrometer. Structure of the pigments are spinel and particles' shape are spherical or cubic. Glazed tiles containing 5 wt% pigments were fired at $1260^{\circ}C$ and $1240^{\circ}C$ in reduction atmosphere. Color in glazes were analyzed by UV-vis spectrometer. Colors of NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.4875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0125 mole% and NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.3875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.1125 mole% in lime glaze showed black in oxidation, in reduction NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.4875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0125 mole% and NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.55{\cdot}Mn_2O_3$ 0.0125 mole% showed black. In case of lime-barium glaze, NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.3875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.1125 mole%, NiO 0.975 MnO $0.075{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% and NiO 0.925 MnO $0.075{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% showed black color in oxidation and NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.3875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.1125 mole%, NiO 0.925 MnO $0.075{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% and NiO 0.725 MnO $0.275{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% showed black one in reduction.

Multiferroic h-HoMnO3의 자기적 성질 연구 (Magnetic Properties of Multiferroic h-HoMnO3)

  • 김성백;금복연;김철성;안성용;;;장광현;박제근
    • 한국자기학회지
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    • 제15권2호
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    • pp.113-117
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    • 2005
  • 4-point focused floating Bone furnace를 이용하여 multiferroic $HoMnO_3$ 단결정을 제조하였으며, 직접합성법으로 $HoMn_{1-x}\;^57Fe_xO_3$ (x=0, 0.01, 0.02, 0.05) 분말 시료를 제조하여 그 결정학적 및 자기적 성질을 연구하였다. 결정구조는 hexagonal 구조로, (110) 방향이 자화용이축 임을 알 수 있었고, 온도 변화에 따른 강유전 상수(dielectric constant $\epsilon$)는 c축과 평행한 방향에서 특이성(anomaly)을 갖는 것으로 나타났다. 이 때 특이성이 나타나는 온도 구간은, c축 방향으로 인가된 자기장 세기에 따라 민감하게 변화함이 관측되고 있어, multiferroic 소자로의 응용 가능성을 제시하고 있다. 한편 Mn 자리에 $^{57}Fe$를 미량 치환한 분말 시료에 대하여 $M\ddot{o}ssbauer$ 분광학적 연구를 수행하였다.

Electrical Properties of Low Temperature Sintered $SrTiO_3$ Varistor

  • Seon, Ho-Won;Kim, Seong-Ho;Sahn Nahm;Kim, Yoonho
    • The Korean Journal of Ceramics
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    • 제5권3호
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    • pp.255-259
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    • 1999
  • The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.

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ReMnO3(Re:Ho, Er) 박막의 강유전성에 미치는 열처리 공정의 영향 (Effects of Thermal Heat Treatment Process on the Ferroelectric Properties of ReMnO3 (Re:Ho, Er) Thin Films)

  • 김응수;채정훈
    • 한국세라믹학회지
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    • 제42권11호
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    • pp.763-769
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    • 2005
  • Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

$MnO_2$첨가에 따른 무연 BNKT계의 압전특성 (Piezoelectric properties of Pb-free BNKT ceramics with $MnO_2$ addition)

  • 이미영;류성림;류주현;이수호;정영호;정광현;홍재일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.744-747
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    • 2004
  • [ $0.96[Bio_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%MnO_2$ ], were studied in order to develope the superior dielectric and piezoelectric properties of Lead-free Piezoelectric ceramics. With increasing amount of $MnO_2$ addition, density showed the maximum value of $5.79[gcm^3$] at 0.1wt% $MnO_2$ addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 161 at 0.3wt% $MnO_2$ addition.

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화학 기상 증착법으로 제조한 ReMnO3(Re:Y, Ho, Er) 박막의 전기적 특성 (Electrical Properties of ReMnO3(Re:Y, Ho, Er) Thin Film Prepared by MOCVD Method)

  • 김응수;채정훈;강승구
    • 한국세라믹학회지
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    • 제39권12호
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    • pp.1128-1132
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    • 2002
  • MFS-FET(Metal-Ferroelectric-Semiconductor Field Effect Transistor) 구조의 비휘발성 기억소자용 $ReMnO_3$(Re:Y, Ho, Er) 박막을 금속 유기 화학 기상 증착법(MOCVD)으로 증착하였다. $ReMnO_3$ 박막을 Si(100) 기판 위에 700${\circ}C$-2시간 증착 시켜 결정화를 위해 대기 중에서 900${\circ}C$-1시간 열처리 시 육방정계(hexagonal) 단일상의 $ReMnO_3$ 박막을 형성하였다. 육방정계 단일상 구조에서 $ReMnO_3$ 박막의 강유전 특성은 c-축 배향성에 의존하였으며, c-축 배향성이 우수한 $YMnO_3$ 박막의 잔류 분극(Pr) 값은 105 nC/$cm^2$로 가장 우수하였다. 또한 누설 전류 밀도(leakage current density) 값은 미세구조의 결정립 크기에 의존하였으며, 결정립 크기가 100∼150 nm인 $YMnO_3$ 박막의 누설 전류 밀도 값은 인가전압 0.5 V에서 $10^{-8}$ A/$cm^2$을 나타내었다.

Microstructure of the Oriented Hexagonal HoMnO3 Thin Films by PLD

  • Choi, Dong-Hyeok;Shim, In-Bo;Kouh, Tae-Joon;Kim, Chul-Sung
    • Journal of Magnetics
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    • 제12권4호
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    • pp.141-143
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    • 2007
  • We have fabricated (0001) oriented hexagonal $HoMnO_3$ thin films with thickness of 300 nm using Pulsed Laser Deposition (PLD) technique on $Pt(111)/Ti/SiO_2/Si$ substrates. The XRD $\theta-2\theta$ pattern shows only (0002), (0004), and (0008) reflection of a hexagonal phase, and the full width at half maximum (FWHM) of (0004) peak is under $1.6^{\circ}$. The chemical state of Mn from XPS spectra of the films reveals the presence of $Mn^{3+}$ only. The temperature dependence of dielectric constant shows a weak anomaly at magnetic $N\acute{e}el$ temperature $(T_N)$, which is about 70 K.

${Nb_2}{O_5}$와 MnO 첨가가 ${Pb_{0.6}}{Sr_{0.4}}{TiO_3}$ 반도체 세라믹의 전기적 특성에 미치는 영향 (Influences of ${Nb_2}{O_5}$ and MnO Addition on the Electrical Properties of ${Pb_{0.6}}{Sr_{0.4}}{TiO_3}$Semiconducting Ceramics)

  • 문정호;김건;김성호;김윤호
    • 한국세라믹학회지
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    • 제37권10호
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    • pp.968-974
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    • 2000
  • Nb$_2$O$_{5}$와 MnO 첨가에 따른 Pb$_{0.6}$Sr$_{0.4}$TiO$_3$반도체 세라믹의 미세구조와 전기적 특성은 유전특성, I(current)-V(voltage) 측정, 그리고 복소 임피던스 측정 등을 이용하여 고찰하였다. Nb 도핑량이 0.4 mol% 이하인 경우 Nb 도핑량에 따라 전도성과 입성장은 증가되었으나 그 이상의 도핑량에서는 Sr이나 Pb 공공의 생성으로 인하여 전도성이 감소되고 입성장도 억제되는 것을 관찰할 수 있었다. 0.4 mol% Nb-doped Pb$_{0.6}$Sr$_{0.4}$TiO$_3$에 0.01 mol% MnO를 첨가한 경우 비저항비($ ho$$_{max}$/$\rho$/min/)가 $10^2$에서 $10^4$으로 크게 향상되었다. 그리고 전이 온도 주변에서 여러 개의 변곡점을 지니는 비옴성 거동이 발견되었다. 이와 같은 현상은 입계에 존재하는 Mn 이온이 부분적으로 편석되어 표면 전하의 보상 효과에 영향을 미치는 것이라고 사료된다.

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