• Korean Journal of Materials Research
• /
• v.16 no.6
• /
• pp.394-399
• /
• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

• Journal of the Korean Ceramic Society
• /
• v.44 no.11
• /
• pp.639-644
• /
• 2007

Spinel pigments, developing black color in high temperature glazes at oxidation or reduction atmosphere, without CoO because of its high price were synthesized by solid solution method. Ten mixed compositions consisted of NiO, MnO, $Fe_2O_3 and $Mn_2O_3$ were fired at $1250^{\circ}C$ for 1h. The resulting pigments were characterized by using XRD, FT-IR, SEM and UV-vis spectrometer. Structure of the pigments are spinel and particles' shape are spherical or cubic. Glazed tiles containing 5 wt% pigments were fired at $1260^{\circ}C$ and $1240^{\circ}C$ in reduction atmosphere. Color in glazes were analyzed by UV-vis spectrometer. Colors of NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.4875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0125 mole% and NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.3875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.1125 mole% in lime glaze showed black in oxidation, in reduction NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.4875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0125 mole% and NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.55{\cdot}Mn_2O_3$ 0.0125 mole% showed black. In case of lime-barium glaze, NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.3875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.1125 mole%, NiO 0.975 MnO $0.075{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% and NiO 0.925 MnO $0.075{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% showed black color in oxidation and NiO 0.875 MnO $0.125{\cdot}Fe_2O_3$ $0.3875{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.1125 mole%, NiO 0.925 MnO $0.075{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% and NiO 0.725 MnO $0.275{\cdot}Fe_2O_3$ $0.4375{\cdot}Cr_2O_3$ $0.50{\cdot}Mn_2O_3$ 0.0625 mole% showed black one in reduction.

• Journal of the Korean Magnetics Society
• /
• v.15 no.2
• /
• pp.113-117
• /
• 2005

Multiferroic $HoMnO_3$ single crystal was prepared using 4-point focused floating zone furnace, and polycrystalline $HoMn_{1-x}\;^57Fe_xO_3$ (x=0.00, 0.01, 0.02, 0.05) powders have been prepared by solid state reaction. Their magnetic and crystallographic properties are studied using MPMS, PPMS, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structure found to be a hexagonal and a magnetic easy-axis is (110) direction. As the external applied magnetic field increases, temperature of the dielectric constant anomaly is decreased. $HoMn_{0.95}\;^{57}Fe_{0.05}O_3$ shows huge quadrupole splitting value from the $M\ddot{o}ssbauer$ spectra.

• The Korean Journal of Ceramics
• /
• v.5 no.3
• /
• pp.255-259
• /
• 1999

The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.

• Journal of the Korean Ceramic Society
• /
• v.42 no.11 s.282
• /
• pp.763-769
• /
• 2005

Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.744-747
• /
• 2004

[ $0.96[Bio_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%MnO_2$ ], were studied in order to develope the superior dielectric and piezoelectric properties of Lead-free Piezoelectric ceramics. With increasing amount of $MnO_2$ addition, density showed the maximum value of $5.79[gcm^3$] at 0.1wt% $MnO_2$ addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 161 at 0.3wt% $MnO_2$ addition.

• Journal of the Korean Ceramic Society
• /
• v.39 no.12
• /
• pp.1128-1132
• /
• 2002

$ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2004.10a
• /
• pp.85.3-85.3
• /
• 2004

• Journal of Magnetics
• /
• v.12 no.4
• /
• pp.141-143
• /
• 2007

We have fabricated (0001) oriented hexagonal $HoMnO_3$ thin films with thickness of 300 nm using Pulsed Laser Deposition (PLD) technique on $Pt(111)/Ti/SiO_2/Si$ substrates. The XRD $\theta-2\theta$ pattern shows only (0002), (0004), and (0008) reflection of a hexagonal phase, and the full width at half maximum (FWHM) of (0004) peak is under $1.6^{\circ}$. The chemical state of Mn from XPS spectra of the films reveals the presence of $Mn^{3+}$ only. The temperature dependence of dielectric constant shows a weak anomaly at magnetic $N\acute{e}el$ temperature $(T_N)$, which is about 70 K.

• Journal of the Korean Ceramic Society
• /
• v.37 no.10
• /
• pp.968-974
• /
• 2000

Nb$_2$O$_{5}$와 MnO 첨가에 따른 Pb$_{0.6}$Sr$_{0.4}$TiO$_3$반도체 세라믹의 미세구조와 전기적 특성은 유전특성, I(current)-V(voltage) 측정, 그리고 복소 임피던스 측정 등을 이용하여 고찰하였다. Nb 도핑량이 0.4 mol% 이하인 경우 Nb 도핑량에 따라 전도성과 입성장은 증가되었으나 그 이상의 도핑량에서는 Sr이나 Pb 공공의 생성으로 인하여 전도성이 감소되고 입성장도 억제되는 것을 관찰할 수 있었다. 0.4 mol% Nb-doped Pb$_{0.6}$Sr$_{0.4}$TiO$_3$에 0.01 mol% MnO를 첨가한 경우 비저항비($ ho$$_{max}$/$\rho$/min/)가 $10^2$에서 $10^4$으로 크게 향상되었다. 그리고 전이 온도 주변에서 여러 개의 변곡점을 지니는 비옴성 거동이 발견되었다. 이와 같은 현상은 입계에 존재하는 Mn 이온이 부분적으로 편석되어 표면 전하의 보상 효과에 영향을 미치는 것이라고 사료된다.