• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.1019-1023
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• 2008

Photoluminescence properties of $SrTiO_3$:Sm red phosphors synthesized by solid state reaction method were studied under 254 nm excitation. Emission bands at 576 nm and 616 nm in heavily $Sm^{3+}$ ion doped $SrTiO_3$:Sm phosphors were observed, which were attributed to $^4G_{5/2}\rightarrow{^6}H_{5/2}$ and $^4G_{5/2}\rightarrow{^6}H_{7/2}$ transition of $Sm^{3+}$, respectively. The $Sm^{3+}$ ion concentration exhibiting the maximum emission intensity in the $SrTiO_3$:Sm was 30 mol%. The luminescence caused by $Sm^{3+}$ in the $SrTiO_3$:Sm phosphors was interpreted by the energy transfer between $Sm^{3+}$ ions.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.145-149
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• 2005

[ $Eu^{2+}$ ]-activated barium magnesium silicate phosphor, $(Ba,Ca)_{3}MgSi_{2}O_{8}:Eu_{x}$, has been known to emit blue-green light. In this study we report the manufacturing processes for producing either pure green or pure blue light-emitting phosphor from the same composition of $Ba_{2-x}Ca_{2}CaMgSi_{2}O_{8}:Eu_{x}$ (0 < x < 1) by controlling heat treatment conditions. Green light emitting phosphor of $Ba_{1.9}CaMgSi_{2}O_{8}:Eu_{0.1}$ can be produced under the sample preparation condition of highly reducing atmosphere of $23\%\;H_2/77\%\;N_2$, while blue or blue-green light emitting phosphor under reducing atmosphere of $5\~20\%\;H_2\;/\;95\~80\%$ N_2. The green light-emitting phosphors are prepared in two steps: firing at $800\~1000^{\circ}C$ for $2\~5$ h in air then at $1100\~1350^{\circ}C$ for 2-5 h under reducing atmo­sphere $23\%$ $H_2/77\%\;N_2$. The excitation spectrum of the green light-emitting phosphor shows a broadband of $300\~410$ nm. The emission spectrum has a maximum intensity at the wavelength of about 501 nm. The CIE value of green light emission is (0.162, 0.528). The pure blue light-emitting phosphors can be produced using the $Ba{2_x}CaMgSi_{2}O_{8}:Eu_{x}$ by introducing additional firing step at $1150\~1300^{\circ}C$ in air before the final reducing treatment. The XRD analysis shows that the green light-emitting phosphor mainly consisted of $Ba_{1.31}Ca_{0.69}SiO_{4}$ (JCPDS $\#$ 36-1449) and other minor phases i.e., $MgSiO_3$ (JCPDS $\#$ 22-0714) and $Ca_{2}BaMgSi_{2}O_{8}$ (JCPDS $\#$ 31-0128). The blue light-emitting phosphor mainly consisted of $Ca_{2}BaMgSi_{2}O_{8}$ phase.

• Journal of Magnetics
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• v.20 no.3
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• pp.211-214
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• 2015

$Cr_2O_3$ nanoparticles were prepared via one-step reactive laser ablation of Cr in oxygen. The metastable $CrO_2$ phase was obtained through the subsequent oxidation of $Cr_2O_3$ nanoparticles under $O_2$ with gas pressures of up to 40 MPa. The as-prepared $Cr_2O_3$ nanoparticles are spherical or rectangular in shape with sizes ranging from 20 nm to 50 nm. High oxygen pressure annealing is effective in producing meta-stable $CrO_2$ from as-dried $Cr_2O_3$ nanoparticles, and the $Cr_2O_3$ nanoparticles exhibit a weak ferromagnetic behavior with an exchange bias of up to 11 mT that can be ascribed to the interfacial exchange coupling between uncompensated surface spins and the antiferromagnetic core. The $Cr_2O_3/CrO_2$ nanoparticles exhibit an enhanced saturation magnetization and a reduced exchange bias with an increasing faction of $CrO_2$ due to the elimination of uncompensated surface spins over the $Cr_2O_3$ nanoparticles when exposed to a high pressure of $O_2$ and/or possible phase segregation that results in a smaller grain size for both $Cr_2O_3$ and $CrO_2$.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

• Journal of Physiology & Pathology in Korean Medicine
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• v.17 no.2
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• pp.447-450
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• 2003

To clerify the cytotoxicity of reactive oxygen species in cultured hippocampal neurons of neonatal mouse, toxic effect was measured by MTT assay after cultured cells were incubated for 3 hours in the media containing 1～40 μM concentrations of H₂O₂. In addition, the protective effect of vitamin E was determined in these cultrures. Cell viability was significantly decreased in a dose-dependent manner after exposure of 10 μM H₂O₂ to cultured mouse hippocampal neurons for 5 hours. In the protective effect of vitamin E, vitamin E prevented the H₂O₂-induced cytotoxicity in these cultures. From these results, it suggests that H₂O₂ has toxic effect in cultured mouse hippocampal neurons and vitamin E has protective effect on the cytotoxicity induced by H₂O₂.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.59-63
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• 2006

The study is coated tin(IV) oxide coated on the titanium substrate electrodes by electrodepositon and dip-coating method and studied about that physical and electrochemical characterization by coating methods. After titanium substrate is etched in HCl, electrodespotion is coated $SnCl_2{\cdot}2H_2O$ in nitrate solution by pulse technique, dip-coating method is also used $SnCl_2{\cdot}2H_2O$ in 1;1V% HCl and coated by dipping and annealing process. tin(IV) oxide coated on titanium substrate electrodes by two coating methods are studied x-ray diffraction (XRD), scanning electron microscopy (SEM) to compare physical characterization of electrode and potential window by cyclic voltammetry (CV) to observe electrochemical characterization.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3696-3701
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• 2011

The single-crystal structure of partially dehydrated partially $Mg^{2+}$-exchanged zeolite Y, ${\mid}Mg{30.5}Na_{14}(H_2O)_{2.5}{\mid}$ [$Si_{117}Al_{75}O_{384}$]-FAU per unit cell, ${\alpha}$ = 25.5060(1) ${\AA}$, dehydrated at 723 K and $1{\times}10^{-4}$ Pa, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\bar{3}$ m at 100(1) K. The structure was refined using all intensities to the final error indices (using only the 561 reflections with $F_{\circ}$ > $4{\sigma}(F_{\circ})$) $R_1$ = 0.0377 (Based on F) and $R_2$ = 0.1032 (Based on $F^2$). About 30.5 $Mg^{2+}$ ions per unit cell are found at four different crystallographic sites. The 14 $Mg^{2+}$ ions occupy at site I at the center of double 6-ring (Mg-O = 2.231(3) ${\AA}$, O-Mg-O = $89.15(11)^{\circ}$ and $90.85(11)^{\circ}$). Four $Mg^{2+}$ ions are found at site I' in the sodalite cavity; the $Mg^{2+}$ ions are recessed 1.22 ${\AA}$ into the sodalite cavity from their 3-oxygen plane (Mg-O = 2.20(3) ${\AA}$ and O-Mg-O = $92.3(14)^{\circ}$). Site II' positions (opposite single 6-rings in the sodalite cage) are occupied by 2.5 $Mg^{2+}$ ions, each coordinated to an $H_2O$ molecule (Mg-O = 2.187(20) ${\AA}$ and O-Mg-O = $114.2(16)^{\circ}$). The 10 $Mg^{2+}$ ions are nearly three-quarters filled at site II in the supercage, being recessed 0.12 ${\AA}$ into the supercage (Mg-O = 2.123(4) A and O-Mg-O = $119.70(19)^{\circ}$). About 14 $Na^+$ ions per unit cell are found at one crystallographic site; the $Na^+$ ions are located at site II in the supercage (Na-O = 2.234(7) ${\AA}$ and O-Mg-O = $110.5(4)^{\circ}$).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.801-804
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• 2006

[ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.34 no.3
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• pp.885-893
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• 2014

This research reports the enhanced Electrokinetic (EK) with $H_2O_2$ and sodium dodecyl surfate (SDS), which are commonly used in Fenton oxidation and soil flushing method, in order to remediate soil contaminated with heavy metals and Total Petroleum Hydrocarbons (TPH) simultaneously. In addition, influences of property of soil and concentration of chemical solution were investigated through experiments of different types of soils and varying concentration of chemical reagents. The results indicated, in the experiments using artificially contaminated soil, the highest removal efficiency of heavy metals using 10% $H_2O_2$ and 20mM SDS as electrolytes. However, in the experiments using Yong-San soils (study area), remediation efficiency of heavy metals was decreased because high acid buffering capacity. Through experiment of 20% $H_2O_2$ and 40mM SDS, increased electric current influences the remediation of heavy metals due to decrease in the soil pH. In the experiments of Yong-San soils, the remediation efficiency of TPH was decreased compared with artificially spiked soils because high acid buffering capacity and organic carbon contents. Furthermore, the scavenger effect of SDS influenced TPH oxidation efficiency under the conditions of injected 40mM SDS in the soils. Therefore, the property of soil and concentration of chemical reagents cause the electroosmotic flow, soil pH, remediation efficiency of heavy metals and TPH.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.