• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.305-312
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• 1995

Thin films of Pb(Mg, Zn)1/3Nb2/3O3 were fabricated by spin coating the Pb-Mg-Zn-Nb-O complex alkoxide sols on(111) Pt-coated MgO (100) planes. It was observed that the content of H2O and the rheological characteristics of sol greatly influenced the orientation of perovskite grains after thin-film formation. A strong preferential orientation of (100)-type planes of the perovskite grains was obtained for the sol aged for 15 days with the molar ratio of H2O to total metal alkoxides=2. As small angle X-ray scattering experiment in the Porod region was performed to correlate the observed preferential orientation with the network structure of precursors at various stage of aging. It was shown that the degree of branching of the Pb-Mg-Zn-Nb-O precursor chain had a direct effect on the preferred oreintation, and weakly branched precursor systems led to highly oriented grains after thin-film formation.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.201-207
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• 2002

A Pin-Cylinder discharge type ozonizer was designed and manufactured. The increase or decrease of temperature greatly influences on the characteristics of ozone generation of a discharge type ozonizer. The characteristics of ozone concentration ( $O_{3con}$), ozone generation ($_{3g}$) and ozone yield .ate ($_{3Y}$) of the ozonizer were investigated by varying the gas flow rate (Q), the discharge power ($_{Wd}$ ) and the temperature (T). At T = 20($^{\circ}C$), the values of ( $O_{3con}$) were found as 7800,5300,3000 and 2300(ppm) at Q=1,2,4 and 6(1/min) respectively. The corresponding values of ( $O_{3g}$) were found as 917, l247,1411 and 1623(mg/h) and those of ( $O_{3Y}$) were 93,126,143 and 164(g/kWh) respectively. When the temperature is decreased to -50($^{\circ}C$), the values of ( $O_{3con}$) became 12000,8000,5200 and 3600(ppm) at Q=1,2,4 and 6(1/min) respectively. The corresponding values of 0,9 were obtained as 1411,1882,2446 and 2600(mg/h) and those of ($O_{3Y}$) were 143,190,247 and 2631g/kWh] respectively. Hence as the temperature was decreased from 20 to -50[。C], the efficiencies of ozone generation were increased by 54,51,73 and 60[%] at Q=1,2,4 and 6(1/min) respectively.ctively.

• Bulletin of the Korean Mathematical Society
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• v.52 no.2
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• pp.661-677
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• 2015

In this paper, we consider the following Kirchhoff-type Schr$\ddot{o}$dinger system $$\{-\(a_1+b_1{\int}_{\mathbb{R^3}}{\mid}{\nabla}u{\mid}^2dx\){\Delta}u+{\gamma}V(x)u=\frac{2{\alpha}}{{\alpha}+{\beta}}{\mid}u{\mid}^{\alpha-2}u{\mid}v{\mid}^{\beta}\;in\;\mathbb{R}^3,\\-\(a_2+b_2{\int}_{\mathbb{R^3}}{\mid}{\nabla}v{\mid}^2dx\){\Delta}v+{\gamma}W(x)v=\frac{2{\beta}}{{\alpha}+{\beta}}{\mid}u{\mid}^{\alpha}{\mid}v{\mid}^{\beta-2}v\;in\;\mathbb{R}^3,\\u,v{\in}H^1(\mathbb{R}^3),$$ where $a_i$ and $b_i$ are positive constants for i = 1, 2, ${\gamma}$ > 0 is a parameter, V (x) and W(x) are nonnegative continuous potential functions. By applying the Nehari manifold method and the concentration-compactness principle, we obtain the existence and concentration of ground state solutions when the parameter ${\gamma}$ is sufficiently large.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Resources Recycling
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• v.17 no.6
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• pp.10-16
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• 2008

In this study, the crystallization of cerium carbonate from cerium chloride solution by addition of ammonium bicarbonate was investigated. The concentration of reactants such as cerium chloride(0.5-2M) and ammonium bicarbonate, and reaction temperature($20-60^{\circ}C$) have a great effect on the crystal types of cerium carbonate such as lanthanite-type cerium carbonate[$Ce_2(CO_3)_3{\cdot}8H_2O$] and tengerite-type cerium carbonate[$Ce_2(CO_3)_3{\cdot}2.5H_2O$]. The crystallinity of cerium carbonate changed from lanthanite to tengerite as the concentration of reactants and reaction temperature increased. Transformation of cerium carbonate hydrate was transformed to cerium hydroxy carbonate depended on the drying conditions. Cerium carbonate of lanthanite and tengerite has the shape of aggregates with plate type crystal, and the size of lanthanite and tengerite crystal was $3{\mu}m$ and $5{\mu}m$, respectively. Cerium hydroxy carbonate has the shape of aggregates with needle type crystal, and the crystal size was about $7{\mu}m$.

• Journal of the Korean Chemical Society
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• v.38 no.6
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• pp.435-441
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• 1994

The inclusion compound constituted with three-dimensional metal-complex $Cd(pn)Ni(CN)_4$ has been prepared and determined the crystal structure from single crystal X-ray diffraction data. Crystal data are as follows: $[Cd(pn)Ni(CN)_4]{\cdot}0.5(CH_3COCH_3{\cdot}H_2O)$, Fw = 387.35, Orthorhombic, $Pn2_1a$, a = 13.950(3) $\AA$, b = 26.713(7) $\AA$, c = 7.628(1) $\AA$, V = 2843(1) $\AA^3$, Z = 4, $D_x=1.81 gcm^{-3}$, $\mu(MoK{\alpha})$ = $28.153 cm^{-1}$, T = 297K, final R = 0.0418 for 3521($F_0>3{\sigma}(F_0)$). The metal-complex host provides tunnel cavity, similar to thiourea inclusion compounds, accommodated guest molecules $(=CH_3COCH_3\;and\;$H_2O).$ The stoichiometric host: guest ratio is 0.5. The title inclusion compound reveals another evidence for the host-selectivity, that is, the branched aliphatic guest molecule leads T-type host structure.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.444-446
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• 1999

The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

• Bulletin of the Korean Chemical Society
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• v.20 no.5
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• pp.573-576
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• 1999

The rate constants and kinetic solvent isotope effects (KSIE, KMeOH/kMeOD) for solvolyses of para-substituted phenylchloroformates in CH3OH, CH3OD, H2O, D2O, 50% D2O-CH3OD were determined at 15.0 and 25.0℃ using conductometric method. Kinetic solvent isotope effects for the solvolyses of para-substituted phenyl chloroformates were 2.39-2.51, 2.21-2.28, and 1.67-1.69 for methanol, 50% aqueous methanol, and water, respectively. The slopes of Hammett plot for solvolysis of para-substituted phenyl chloroformates in methanol, 50% aqueous methanol, and water were 1.49, 1.17 and 0.89, respectively. The Hammett type plot of KSIE, log (KSIE) versus p, can be a useful mechanistic tool for solvolytic reactions. The slopes of such straight lines for para-substituted phenyl chloroformates are almost zero in methanol, 50% aqueous methanol, and water. It was shown that the reaction proceeds via an associative SN2 and/or general base catalysis addition-elimination (SAN) mechanism based on activation parameters, Hammett p values, and slopes of Hammett type plot of KS-IE.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.507-512
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• 2013

Perovskite-type oxides were successfully prepared using microwave-assisted process, and by XRD, XPS, BET, and $H_2-TPR$. Their catalytic activities for the combustion of benzene were also examined. Most of catalysts studied showed the perovskite crystalline phase with the particle size of 21~35 nm. The $LaMnO_3$ catalyst showed the highest activity and the conversion reached almost 100% at $250^{\circ}C$. The catalysts prepared by microwave-assisted process showed higher activity compared to those prepared sol-gel method. In addition, the catalytic activity was increased with an increase of calcination temperature of $LaMnO_3$-type catalyst. The TPR results on the measurement of redox property showed a good correlation with the order of catalytic activity on the benzene combustion reaction.