• 한국초전도ㆍ저온공학회논문지
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• 제10권1호
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• pp.10-14
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• 2008

Differently from BSCCO tapes which are fabricated by powder-in-tube method, the coated conductors are made by the evaporation of YBCO on metal substrate. Due to this structural merit, although the coated conductors are generally used for large current transportation, they are expected to be favorable to the purpose of the fault current limitation as well. In this study, using YBCO coated conductor having copper stabilizer formed by plating technique(produced by Superpower Co.), we investigated the over-current characteristics of the coated conductor. The coated conductors had 85 A $I_c$ and 90 K $T_c$. The resistance of the conductor was 0.93 $m{\Omega}/cm$ at 300 K and 0.17 $m{\Omega}/cm$ at the temperature right above $T_c$. To the coated conductors, we applied the voltages of the range from 150 $V_{rms}$ to 230 $V_{rms}$ and measured the V-I curves using four probe method. From the results, we could analyze the electric behavior of the coated conductor in flux flow state. As the current exceed $I_c$, the currents were distributed into the superconductor and metal stabilizer. The amounts of the currents shared through both current paths were calculated under the assumption that the ,Joule heating was perfectly eliminated by $LN_2$ surrounding the conductor. Finally, the condition for the stable current flowing state which does not affect the conductor was established from the analysis on the over-current characteristics.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.484-488
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• 2001

The grid voltage of commercial utility power source hi Japan and USA is 100rms, but in China and European countries, it is 200rms. In recent years, In Japan 200Vrms out putted single phase three wire system begins to be used for high power applications. In 100Vrms utility AC power applications and systems, an active voltage clamped quasi-resonant Inverter circuit topology using IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped high-frequency Inverter type AC-DC converter using which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. This zero voltage soft switching Inverter can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant Inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull type Inverter are evaluated and discussed for consumer microwave oven. The harmonic line current components In the utility AC power side of the AC-DC power converter operating at ZVS­PWM strategy reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

• 전기전자학회논문지
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• 제22권4호
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• pp.1226-1229
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• 2018

본 연구에서는 이온주입 된 4H-탄화규소(SiC) 에피 층 위에 환원된 그래핀 산화물 (r-GO)을 보호 층으로 적용하여 고온 열처리 공정 중 발생하는 표면 거칠기 악화를 개선하였다. 실험에 사용 된 4H-SiC 에피 층은 $4^{\circ}$ off-axis n-형 4H-SiC 기판 위에 $10{\mu}m$ 두께로 성장되었다. $n^+$-형 4H-SiC 층을 제공하기 위해 $1.73{\times}10^{15}cm^{-2}$ 농도의 질소를 고온 고에너지 이온주입 공정으로 주입하였고, 보호 층으로 사용한 r-GO는 스프레이 코팅 방식으로 4H-SiC 층 위에 형성하였다. r-GO를 보호 층으로 적용 한 결과, 적용하지 않은 시료에 비해 고온 열처리 후 표면 거칠기 (RMS)가 10배 개선되었으며, 전기적 측정으로 추출한 누설 전류를 통해 표면 거칠기 개선으로 표면 상태가 완화되었음을 확인하였다.

• 한국해안·해양공학회논문집
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• 제32권2호
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• pp.122-134
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• 2020

최근 동해안을 비롯한 많은 해안에서 심각한 해안침식과 인접한 해안도로 유실 등과 같은 연안재해가 발생되고 있는 것은 널리 알려진 사실이다. 이에 대한 대안으로 유럽을 비롯한 해외에서는 저마루구조물(LCS, Low-Crested Structure)에 의한 연안재해 저감법이 활발하게 연구되고 있다. 본 연구에서는 선행연구를 바탕으로 투과성의 LCS 및 그의 주변 파동장에 olaFlow 모델을 적용하여 불규칙파동장 하의 3차원 수치해석을 수행한다. 이로부터 H_rms, 해빈류 및 평균난류운동에너지를 수치적으로 검토하며, 해빈류의 패턴과 평균난류운동에너지의 공간분포에 관해서는 불규칙파동장 하 잠제의 경우와 비교하였다. 이로부터 해빈류의 양상이 잠제의 경우와는 상반되게 나타나는 등의 중요한 결과를 얻을 수 있었다.

• 한국정밀공학회지
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• 제12권9호
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• pp.74-85
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• 1995

The purpose of this paper is to evaluate the grade of WA vitrified and resinoid bond grinding wheels by the sue of AE measuring system. When the manufactured 48 kinds of specimens were scratched by the method of OKOSHI'S grade test, the relationship between the amount of bit scratch depth of grinding wheel specimens and the character- istics of AE signals, and the relationship of AE counts and grade were considered as fololws; (1) The higher the grades are AE cumlulative event counts N and AE event count rate n, the smaller the values tend to be. But A $E_{rms}$is in reverse. (2) In the case of same grade, the smaller the grain size is, the higher the value of AE cumulative event counts N and A $E_{rms}$is results of comparison and observation. The grinding wheel with lower elasticity and with higher percentage of pore detected higher value of AE cumula- tive event counts N than with higher elasticity and lower percentage of pore. But A $E_{rms}$ is in reverse. (3) AE cumulative event counts N and bit scratch depth h have normally one to one correspondence. (4) It can be expected that quantitative evaluations of grade by using AE have been carried out by the wave observation of AE signal in line with the relationship between load speed of bit and AE cumulative event counts N & AE event count rate n.' AE event count rate n.ate n.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 추계학술발표회 발표논문집
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• pp.911-912
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• 2004

1. Cathodic hydrogen charging considerably reduced the tensile ductility of ODS steels and a 9Cr-2W RMS. The hydrogen embrittlement of ODS steels was strongly affected by specimen sampling orientation, showing significant embrittlement in the T-direction. This comes from the microstructural anisotropy caused by elongated grains of ODS steels in L-direction. 2. The ODS steels contained a higher concentration of hydrogen than 9Cr-2W RMS at the same cathodic charging condition, and the critical hydrogen concentration required to transition from ductile to brittle fracture was in the range of $10{\sim}12$ wppm, which approximately 10 times larger than that of a 9Cr-2W martensitic steel. 3. The ODS steels showed a typical ductile to brittle transition behavior and it strongly depended on the specimen sampling direction, namely L- and T-direction. In T-direction, the SP-DBTT was about 170 L, irrespective of the ODS materials, and L-direction showed a lower SP-DBTT than that of T-direction.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.831-836
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• 2010

In this paper, Plasma Enhanced Chemical Vapor Deposition (PECVD) $SiO_2$ film properties are modeled using statistical analysis and neural networks. For systemic analysis, Box-Behnken's 3 factor design of experiments (DOE) with response surface method are used. For characterization, deposited film thickness and film stress are considered as film properties and three process input factors including plasma RF power, flow rate of $N_2O$ gas, and flow rate of 5% $SiH_4$ gas contained at $N_2$ gas are considered for modeling. For film thickness characterization, regression based model showed only 0.71% of root mean squared (RMS) error. Also, for film stress model case, both regression model and neural prediction model showed acceptable RMS error. For sensitivity analysis, compare to conventional fixed mid point based analysis, proposed sensitivity analysis for entire range of interest support more process information to optimize process recipes to satisfy specific film characteristic requirements.

• 한국초전도ㆍ저온공학회논문지
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• 제6권2호
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• pp.25-28
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• 2004

Three-phase inductive superconducting fault current limiter (SFCL) with DC reactor rated on 6.6 $KV_{rms}/200 A_{rms}$ has been developed in Korea. This system consists of one DC reactor, AC/DC power converter, and a three-phase transformer, which is called magnetic core reactor (MCR). This paper deals with the short-circuit analysis of the SFCL. The DC reactor was the HTS solenoid coil whose inductance was 84mH. The power converter was performed as the dual-mode operation for dividing voltage between the rectifying devices. The short-term normal operation (1 see) and short-circuit tests (2∼3 cycles) of this SFCL were performed successfully. In regular short-circuit test, the fault current was limited as 30% of rated short-circuit current at 2 cycles after the fault. The experimental results have a very similar tendency to the simulation results. Using the technique for the fault detection and SCR firing control, the fault current limiting rate of the SFCL was improved. From this research, the parameters for design and manufacture of large-scale SFCL were obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1422-1423
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• 2006

In our study, the PTFE nozzle ablation in the high-voltage self-blast type $SF_6$ gas circuit breaker was investigated. The test circuit breaker has the structure that the pin electrode is moving and the pressure reservoir volume and the dimension is almost same as commercial 145kv 40kA circuit breaker for similar result in real circuit breaker. The variation of current and arcing time was the range of $36kA_{rms}$(symmetry) - $40kA_{rms}$(asymmetry) and 10-16 ms. From the measured data the tendecy of the mass loss of the nozzle to current load and arc energy was estimated. In this process, the distance from the arc to nozzle(PTFE) surface, area which was exposed to arc and stroke contour was considered. These results will be used to enhance the accuracy of the computational fluid dynamics analysis in circuit breaker and estimate the residual life time of a circuit breaker.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.