• Communications of the Korean Institute of Information Scientists and Engineers
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• v.24 no.5 s.204
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• pp.5-14
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• 2006

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.137-141
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• 2010

Poly [4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole]-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene (PPVTBT) was synthesized by the Heck coupling reaction between 4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole and 1,4-bis(dodecyloxy)-2,5-divinylbenzene. The maximum absorption and band gap of PPVTBT were 550 nm and 1.74 eV, respectively. The HOMO and LUMO energy level of PPVTBT were -5.24 eV and -3.50 eV, respectively. The photovoltaic device based on the blend of PPVTBT and (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-phenyl[5,6]-$C_{61}$ (PCBM) (1 : 6 by weight ratio) was fabricated. The efficiency of device was 0.16%. The short circuit current density (Jsc), fill factor (FF) and open-circuit voltage (Voc) of the device was $0.74mA/cm^{2}$, 31% and 0.71 V, respectively, under AM 1.5 G and 1 sun condition ($100mA/cm^{2}$).

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.1-4
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• 1982

Single crystals of InSe were obtained by the Bridgman method. The crystal structure was hombohedral(R3m) with lattice paramete. a=4.02A, c=24.96A. At 300$^{\circ}$K the electrical conductivity was about ~10-2($\Omega$.cm)-1, reslpectively. The electrical conductivity type was n- type. The donor level located at 0.072eV below the conduction band. The Photosensitivity was observed in range from 840nm to 1120nm. The energy gap of InSe single crystal measured from the photoconductivity and the optical transmittance spectrum was 1.20eV, 1.21eV, respectively.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.495-503
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• 1995

As lengthen gap leng of artificial needle shape void 0.24.rarw.1.5[mm]), the amplitude of AE(Acoustic Emission) pulses was enlarged and number of pulses be generated was few. The longer gap length of void, the shorter breakdown time. As a result of this, I found that existen of void in insulation mate was fatal deterioration of insulation. According to phase angle of applied voltage, time being void was scattered largely in region of phase angle of pulses of origination in phase angle of applied voltage. The result will be used to analysis of void diagnosis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.238-241
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• 1987

ITO thin film was prepared by the electroless deposition technique. ITO thin film had a high transmittance in the visible region and a high reflectance in the near infrared region. The energy gap of the thn film (Sn/Im=0.1) was 4.05 eV, the carrier concentration was 2x10**21 cm**-3, and the electric resistivity was 1.5x10**-3 ohm-cm. We confirmed that ITO thin film was a degenerated n-type semiconductor.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.1-5
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• 2000

The C 1s photoelectron energy loss spectra of tris (8-hydroxy-quinoline) aluminum (Alq$_3$) and N,N'-diphenyl-N,N'-bis (3-methyl phenyl)-1,1'-bi-phenyl-4,4'-diamine (TPD) thin films have been investigated. Two major loss structures, namely the plasmon dominated loss lines and shake-up satellites, have been observed. The shake-up spectrum of the C 1s photoelectron line is directly related to the $\pi$-$\pi$$\^$*/ energy gap of the molecule which plays an important role in organic electroluminescent materials. The molecular orbitals of Alq$_3$ and TPD and their major components, quinolime and benzene, have been calculated with the AMI semi-empirical method. The amount of the plasma-dominated loss of Alq$_3$ and TPD, which has to do with the delocalization of electrons through the molecule, was about 24 eV, alike in both cases. The main peak of the C 1s shake-up spectrum of Alq$_3$ and TPD, however, was 5.2 eV and 6.8 eV respectively. It was found that the main shake-up peak reflects more the local $\pi$\longrightarrow$\pi$$\^$*/ transition of quinoline and benzene component rather than the excitation of the whole molecule of Alq$_3$ and TPD. The C 1s shake-up spectra, however, revealed some correlation with the optical energy gap of the organic eletroluminescent materials.

• Journal of Korea Trade
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• v.23 no.5
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• pp.102-117
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• 2019

Purpose - This paper tried to identify the impact of electronic word of mouth (eWOM) on purchase intention (PI) of Korean-brand cars in the context of Russian consumers, taking into consideration the credibility, quality, and quantity of eWOM while also considering the mediation effects of brand image (BI) and perceived quality (PQ). Although there is a considerable number of studies discussing the impact of eWOM determinants on PI, not many studies were conducted focusing on the Russian market. Design/methodology - This paper is considered to fill this gap between eWOM and (PI) and, in order to do so, 211 Russian respondents were randomly selected. Descriptive analysis, factor, and reliability analysis were conducted using SPSS version 22.0. While structural equation modeling was conducted using AMOS version 24.0. Findings - The results display that, in terms of Russian consumers' perception, eWOM credibility, quality, and quantity for Korean-brand cars show a substantial impact on PI. The mediation effects of brand image, as well as perceived quality, were also supported by analysis. In the final part of the paper, theoretical and managerial implications alongside limitations with further research suggestions are presented. Originality/value - This study endeavored to explore the degree of impact of eWOM and mediating roles of BI and PQ on Russian customer intentions to buy Korean-brand cars.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Journal of the Korean Chemical Society
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• v.66 no.5
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• pp.341-348
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• 2022

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.355-358
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• 2011

As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Recently, rapid progress has been made in the field of DSSC (dye sensitized solar cell)area. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. In this paper, we will prepare ZnO thick films on the PET substrates for the electrode applications. We will investigate the structural and microstructure properties through the XRD, and SEM analysis, respectively. Also, we will study the electrical of specimens to apply the conducting electrode.