• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.417-417
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• 2012

나노복합체를 이용하여 제작한 유기 쌍안정성 형태의 비휘발성 메모리 소자는 간단한 공정과 플렉서블 기기에 응용 가능성 때문에 많은 연구가 진행되고 있다. 나노복합체를 사용하여 제작한 비휘발성 메모리 소자의 전기적 성질에 대한 연구는 많이 진행되었으나, Scale-dwon 효과를 고려한 연구가 미흡하다. 본 연구에서는 polyestrene (PS) 박막 층 내부에 분산된 InP 나노입자를 사용한 메모리 소자를 제작하여 전기적 특성을 관찰하였다. InP 나노입자를 PS와 용매인 octadecene에 용해한 후에 초음파 교반기를 사용하여 두 물질을 고르게 섞었다. 고도핑된 Si 기판위에 100 nm 두께의 $SiO_2$ 위에 InP 나노입자와 PS가 섞인 용액을 스핀 코팅한 후, 열을 가해 용매를 제거하여 InP 나노입자가 PS에 분산되어 있는 나노복합체 박막을 형성하였다. 형성된 나노복합체 박막 위에 상부 전극으로 Al을 열증착하여 비휘발성 메모리 소자를 제작하였다. 제작된 메모리 소자는 Al 전극을 마스크를 사용하여 플라즈마 에싱 장비로 에칭을 하였다. 에칭된 소자와 에칭하지 않은 소자의 정전용량-전압 특성을 측정하였다. Flat band 이동은 에칭된 소자가 0.3 V이며 에칭하지 않은 소자는 1.3 V이다. 실험 결과는 에칭을 통해 전기장에 영향 받는 영역이 작아지므로 flat band 이동이 줄어들었다. 에칭방법을 통한 scale-down 효과로 정전용량이 줄어드는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국약용작물학회지
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• 제13권5호
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• pp.270-275
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• 2005

Superoxide dismutases (SOD) are metalloenzymes that convert $O_2^-\;to\;H_2O_2$. Rehmannia glutinosa is highly tolerant to paraquat-induced oxidative stress. The primary objective of this study was to characterize regulation of SOD gene expression in R. glutinosa in response to oxidative stresses and hormones. A full-length putative SOD clone (RgCu-ZnSOD1) was isolated from the leaf cDNA library of R. glutinosa using an expressed sequence tag clone as a probe. RgCu-ZnSOD1 cDNA is 777 bp in length and contains an open reading frame for a polypeptide consisted of 152 amino acid residues. The deduced amino acid sequence of the clone shows highest sequence similarity to the cytosolic Cu-ZnSODs. The two to three major bands with several minor ones on the Southern blots indicate that RgCu-ZnSOD1 is a member of a small multi-gene family. RgCuZnSOD1 mRNA was constitutively expressed in the leaf, flower and root. The expression of RgCu-ZnSOD1 mRNA was increased about 20% by wounding and paraquat, but decreased over 50% by ethylene and $GA_3$. This result indicates that the RgCu-ZnSOD1 expression is regulated differentially by different stresses and phytohormones at the transcription level. The RgCu-ZnSOD1 sequence and information on its regulation will be useful in investigating the role of SOD in the paraquat tolerance of R. glutinosa.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2010년도 한국우주과학회보 제19권1호
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• pp.25.2-25.2
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• 2010

MIRIS는 과학기술위성 3호의 주 탑제체로 우주 및 지구의 적외선 관측을 위한 두 개의 카메라 시스템을 가지고 있으며 이를 위한 적외선 검출용 이미지 센서가 각각 장착되어 있다. 이미지 센서를 통해 검출된 이미지 데이터를 읽기 위해 고속의 데이터 처리가 요구되어 FPGA 구성방식으로 전용 제어기를 구성하였다. 우주 및 지구의 적외선 관측용 이미지 센서는 구성 및 동작방법이 달라 요구기능을 만족하는 각각의 전용 이미지 센서 제어기를 개발했다. FPGA를 이용한 이미지 센서 제어기에는 검출된 이미지를 읽기위한 센서 제어 신호발생기, 아날로그 이미지 신호를 디지털 정보로 변환하는 ADC 제어용 신호 발생기, ADC의 출력 신호를 고속의 직렬 통신선로로 출력 하는 기능 외에 동작 모드 및 동작 상태 입력용 DSP 인터페이스, 고속의 직렬 통신 선로에 MIRIS 상태정보 삽입 기능, 제어기의 기능을 원격지에서 확인 할 수 있는 이미지 패턴 생성기능 등을 가지고 있다. 특히, 이미지를 읽기 위한 동작 시에만 클록 주파수를 인가하는 방법으로 FPGA 내부 회로를 구성하여 전류의 소모량을 최소화 하였다.

• Food Science and Biotechnology
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• 제15권3호
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• pp.347-350
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• 2006

The objective of this study was to investigate the possible effects of oral administration of single cell products (SCP) of apple on activating peritoneal macrophages. Apples were processed either for cold-pressed juice or SCP, which were produced by incubating sliced apples with a protopectinase, Sumyzyme MC. Both cold-pressed juice and SCP of apple were administered to C57BL/6 mice for 10 days to compare their efficacy, along with the control group, in stimulating peritoneal macrophages. The viability of macrophages was significantly increased by up to 161% of that of the control following the administration of apple SCP, whereas the viability of macrophages was increased to a lesser extent of up to 143% in the apple juice (AJ) administered group. Administration of apple SCP also induced a significantly higher production of $H_2O_2$ from macrophages (317% of the control) than that of cold-pressed AJ (210%). Although nitric oxide (NO) production was not increased by the administration of either AJ or SCP, the latter slightly but significantly increased tumor necrosis factor-${\alpha}$ ($TNF-{\alpha}$) production from macrophages from 560.4 to 579.8 pg/mL. The results of this study suggest that administering SCP is more efficient than administering AJ to stimulate functions of peritoneal macrophages.

• 대한한방내과학회지
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• 제12권2호
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• pp.113-128
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• 1991

This study has been carried out to investigate Pyu-Juk ( 肺積 ), Pyu-Ong ( 肺癰 ), Pyu-Ju ( 肺疽 ), Pyu-Am ( 肺癌 ) by referring to 56 literatures. The results were obtained as follows; 1. The treatllent-method of Pyu-Juk ( 肺積 ) are Ik Ki ( 益氣 ), SuI Yem Wha ( 洩陰火 ), So Juk ( 消積 ), Wha Juk ( 化積 ), Son Juk ( 損積 ), Ma Juk ( 摩積 ) Jo Chil Gi ( 調七氣 ), and herbs are Sik Bun Tang ( 息賁湯 ), Sik Bun Hwan ( 息賁丸 ), O Juk Hwan ( 五積丸 ), Ban ha Tang ( 半夏湯 ), Gil Gyung Tang ( 桔梗湯 ), Dae Chil Gi Tang ( 大七氣湯 ), Chil Gi Hwan ( 七氣湯 ) , Ga Gam Sik BlDl Hwan ( 加減息賁丸 ), Bil Rang San ( 檳郞散 ). 2. The treatment-method of Pyu-Ong ( 肺癰 ) Yang pyu ( 養肺 ), Yang Hyul ( 養血 ), Yang Gi ( 陽氣 ), Chung Geam Youn Pye ( 淸金潤肺 ), Hal Dam Bae Nong ( 豁痰排膿 ), Saeng Gi ( 生肌 ), herbs are Gil Gyung Tang ( 桔梗湯 ), Jung Ryuk Dae Jo Sa Pyu Tang ( ??大棗瀉肺湯 ), Chung Geom Wy Gyung Tang ( 千金 葦莖湯 ) Hwang Gi tang ( 黃嗜湯 ), Hyun Sam Chung Pyu Eum ( 玄蔘淸肺飮 ), Sip Mi Hwan ( 十味丸 ), Gil Gyung Baek San ( 桔梗白散 ), So Hong Eum ( 消膿飮 ), Sam Gi Bo Pyu Tang ( 蔘嗜補肺湯 ), sam Chul Gun Bi Tang ( 蔘朮健脾湯 ), Chung Pyu Gil Gyung Tang ( 淸肺桔梗湯 ), Yu Sung Hwan ( 如聖丸 ). 3. The treatment-method of Pyu-Ju ( 肺疽 ) are Be Bi ( 補脾 ), Bo Pyu ( 補肺 ), herbs are Hwang Gi Gum Jung Tang( 黃嗜補裨湯 ), lnSamBoPyuSan (人蔘補肺散) 4. The treatment-method of Pyu-Am ( 肺癌 ) are Bal Han ( 發汗 ), Chung Yul Hae Dok ( 淸熱解毒 ), Gang Hwa Do Dam ( 降火導痰 ), Hwa Rak Hwa a ( 和絡化瘀 ) Ik Pyu ( 益肺 ), Gun Bi ( 健脾 ), Ja Eum Yun Pyu ( 滋陰潤肺 ), Gi Hu Yang Bo ( 氣虛兩補 ), herbs are Gyul Yua Hae Dok Tang ( 莖熱解毒湯 ), Gang Hwa Jae ( 降火劑 ), Chil Yul Do Dam Tang ( 治熱導痰湯 ), Chong Ho Byul Gap Tang ( 靑蒿鱉甲湯 ), Ga gam Gil Gyung Tang ( 加減桔梗湯 ), Sang Mak San ( 生脈散), Yuk Mi Ji Hwang Tang ( 六味地黃湯 ), Baek Hap Go Geum Tang ( 百合固金湯 ), Dae Be Won Jun ( 大補元煎 ), Ga Mi Jae Che Bo Pyu Tang ( 加味載體補肺湯 ).

• Restorative Dentistry and Endodontics
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• 제14권1호
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• pp.109-118
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• 1989

The purpose of this study was to investigate the bio-stimulating effect of low power density laser radiation on the mechanically exposed pulp. Class V cavities on dog's teeth were prepared and the pulps were mechanically exposed with a round bur. In control group, the exposed pulps were capped with $Ca(OH)_2$ powder and the cavities were sealed with Z.O.E.. In experimental group A, the pulps were irradiated with GaA1As laser for 5 minutes and then they were treated the same as control group. In experimental group B, the exposed pulps were covered by aluminum foil and sealed with Z.O.E. after they were irradiated with the laser as the experimental group A. In the all groups, the pulps were histopathologically observed at the time intervals of 1, 2 and 3 week after experiment and the results were statistically evaluated. The results were as follows: 1) In control and experimental groups, mild vascular congestion and bleeding was found in most of the specimens and for the new formation of dentin bridge, experimental group A had the most cases. The dentin bridge had discontinuous osteodentin like appearance without any dentinal tubules. Inflammatory cell infiltration consisted of acute and chronic inflammatory cell, and the formation of microabscess was also observed. 2) The degree of inflammatory cell infiltration was not significantly different among control group and experimental groups at 1 week, 2 week and 3 week. 3) The formation of new dentin bridge was not significantly different between control group and experimental group A at 1 week, but at 2 week and 3 week, experimental group A showed significantly more cases of new dentin formation than control groups. (P < 0.05). 4) Between control group and experimental group B, there was no significant difference in formation of the new dentin bridge at 1, 2 and 3 week. (P> 0.05). 5) There was no significant difference in formation of the new dentin bridge at 1 and 2 week between experimental group A and experimental group B, but at 3 week, the former significantly had more cases of new dentin bridge formation than the latter.(P < 0.05).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.169-169
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• 2011

STT-MRAM (수직자화 자기메모리)는 자화반전 현상을 원리로 구동하는 비휘발성 메모리로 기존의 메모리 장치에 비해 빠른 접근 속도와 높은 저장 밀도를 가지며 영구적인 기록이 가능하다. 이러한 장점들에 더해 적은 소모 전력을 지니므로 기존의 SRAM등의 한계를 극복할 대안으로 각광받고 있으며 차세대 메모리 군의 선두주자로 가장 적합한 후보중 하나이다. STT-MRAM의 건식 식각 방식에 있어 가장 큰 이슈는 소자 구동에 핵심적인 역할을 하는 MTJ(Magnetic Tunnel Junction)의 식각이다. MTJ는 free layer, tunnel barrier, pinned layer 3개의 층으로 구성되어 있으며 양 끝 layer에는 강자성체인 CoFeB가 사용되고 tunnel barrier에는 절연층인 MgO가 사용되고 있다. 이러한 물질들은 기존의 반도체 소자에서는 사용되지 않았던 물질들로 기존 공정에서 사용되던 Cl2 based plasma etching에서는 측벽에 비화발성 반응물과 잔류 Cl2에 의해 부식이 발생하는 문제점이 드러나고 있다. 이러한 문제점을 해결하기 위한 새로운 대안으로 CO/NH3/Ar나 CH4/Ar 같은 새로운 가스 조합을 사용하는 연구가 진행되고 있다. 이러한 연구에 의해 기존의 Cl2 plasma를 이용한 식각에서 나타나는 문제점은 해결이 되었으나 또 다른 문제점들이 보고되고 있다. 본 연구에서는 stack MRAM sample을 사용하여 기존의 사용되는 Cl2/Ar plasma와 대안 gas인 CO/NH3, CH4/Ar plasma에서의 식각을 진행하였으며 실험 조건(gas 비율 변화, Bias power 변화, 식각 시간)에 따른 식각 속도의 변화나 식각 후의 profile에 대하여 관찰하였다. 이에 따라 식각후에 어떠한 차이점이 있는 지를 알아보았으며 CO/NH3나 CH4/Ar plasma에서 식각시 나타나는 문제점에 대하여도 조명해 보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 대한화학회지
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• 제36권2호
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• pp.212-217
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• 1992

수용액내에서 gadolinium-벤조산 착물형성 반응의 열역학적 함수값들을 이온상수 0.1M $NaClO_4$, $25^{\circ}C$ 조건하에서 구하였다. gadolinium-벤조산 착물의 안정도는 여분의 엔트로피 효과에 기인하는 것으로 판단되며, 벤조산 리간드의 경우 한 자리 리간드에 비해 높은 안정도 상수값을 나타내었다. 이러한 높은 안정도는 리간드내의 벤젠고리의 공액효과로 예측되었다. 합성된 Ga$(ben)_3$의 고체 IR스펙트럼 결과, 벤조산 리간드가 두 자리 리간드로 작용하여 킬레이트를 형성하였으며, 80${\sim}$300K 온도 범위에서의 자화율 데이터는 Curie-Weiss 법칙에 잘 적용됨을 알 수 있었다.