• Title/Summary/Keyword: $Ga_{2}O_{3}$

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A circular economical application of eggshell waste as a bio-filler in the fabrication of gum Arabic composite film

  • Blessing A. Oredokun-Lache;Esther B. Ibrahim;Adekemi G. Oluwafemi;Georgina O. Erifeta;Sunday J. Josiah;Olarewaju M. Oluba
    • Food Science and Preservation
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    • v.31 no.3
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    • pp.394-407
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    • 2024
  • The poultry industry faces disposal difficulty in waste, but recent advancements in material science and sustainability have enabled the innovative transformation of waste into valuable resources. In this study, eggshell (EC) was added as a bio-filler to gum Arabic (GA) to fabricate a GA-EC bio-composite film. Bio-composites containing 0.5 g (GA-EC0.5) and 1.0 g (GA-EC1.0) EC dispersed in 30 mL of 15% GA solution were fabricated and characterized using standard analytical techniques. The GA-EC0.5 composites showed significantly higher moisture content, transparency, water solubility, and water vapor permeability but lower tensile strength and thermal stability than GA-EC1.0. Following a post-harvest wrapping of tomato fruits with the GA-EC composite films and storage at 25±2℃ for 20 days, significant (p>0.05) reductions in weight loss, pH, lycopene content, and activities of polyphenol oxidase and pectin methylesterase compared to unwrapped fruits were recorded. Adding EC to GA has enabled the fabrication of composite films with improved mechanical, barrier, and thermal properties with potential application in the post-harvest storage of tomato fruits.

Fabrication and Characteristics of Zinc Oxide- and Gallium doped Zinc Oxide thin film transistor using Radio Frequency Magnetron sputtering at Room Temperature (Zinc Oxide와 갈륨이 도핑 된 Zinc Oxide를 이용하여 Radio Frequency Magnetron Sputtering 방법에 의해 상온에서 제작된 박막 트랜지스터의 특성 평가)

  • Jeon, Hoon-Ha;Verma, Ved Prakash;Noh, Kyoung-Seok;Kim, Do-Hyun;Choi, Won-Bong;Jeon, Min-Hyon
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.359-365
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    • 2007
  • In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

Towards effective indirect radioisotope energy converters with bright and radiation hard scintillators of (Gd,Y)3Al2Ga3O12 family

  • Korzhik, M.;Abashev, R.;Fedorov, A.;Dosovitskiy, G.;Gordienko, E.;Kamenskikh, I.;Kazlou, D.;Kuznecova, D.;Mechinsky, V.;Pustovarov, V.;Retivov, V.;Vasil'ev, A.
    • Nuclear Engineering and Technology
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    • v.54 no.7
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    • pp.2579-2585
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    • 2022
  • Ceramics of quaternary garnets (Gd,Y)3Al2Ga3O12 doped with Ce, Tb have been fabricated and evaluated as prospective materials for indirect energy converters of α-and β-voltaic. Samples were characterized at excitation with an X-ray source and an intense 150 keV electron beam and showed good temperature stability of their emission and tolerance to irradiation. The role of X-rays accompanied the α-particle emitting in the increase of the conversion efficiency is clarified. The garnet-type structure of the matrix in the developed materials allows the production of quality crystalline mass with a light yield exceeding that of the commonly used YAG: Ce scintillator by a factor of two times.

The Electrical and Optical properties of Al-doped ZnO with high density O2 Plasma treatment on PES substrate

  • Lee, Sang-Hyeop;Song, Chan-Mun;Eom, Tae-U;Im, Dong-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.283.2-283.2
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    • 2016
  • 최근 ZnO는 무독성, 저가격, 수소 플라즈마에 대한 내구성 및 열적 안정성 등의 활발히 연구되고 있으며, III족 원소(Al, Ga, In) 불순물을 도핑하여 전기적 성질의 열적 불안정성을 해결하고 전기적 성질을 향상 시키고 또한 밴드갭 에너지가 3.3 eV 이상으로 증가하여 가시광선 영역에서 광투과율이 높은 투명도 전성 재료를 제공할 수 있다. 본 연구에서는 RF Magnetron Sputtering을 이용하여 내열성과 광학적 측면에서 우수한 성능을 가지는 PES 기판에 표면 에너지를 높이고 치밀한 구조의 박막을 증착하기 위해서 $O_2$ 플라즈마 처리를 하여 ZnO계 투명 전도막을 제작함으로써 투명전극에서 요구하는 $10^{-3}{\Omega}{\cdot}cm$ 이하의 낮은 비저항과 80% 이상의 광투과율을 가지는 방안에 대하여 연구하였다. PES 기판 위에 고밀도 $O_2$ 플라즈마를 이용하여 전 처리를 실시한 후 4인치의 Al-doped ZnO(ZnO 98 wt% : $Al_2O_3$ 2 wt%), AZO의 타겟을 이용하여 상온에서 RF Magnetron Sputtering 법으로 AZO 박막을 증착하였다. PES 기판상의 AZO 박막 두께가(100~400nm) 증가함에 따라 캐리어 농도와 홀 이동도가 점차 증가하는 경향을 보였다. 이는 박막 두께가 증가할수록 면저항과 비저항은 감소하며 결정립 크기가 커지고 결정입계에서 산란이 줄어들기 때문에 전기적 특성이 개선된 것으로 판단된다. 고밀도 $O_2$ 플라즈마 표면처리 시간이 증가함에 따라 플라스틱 기판의 결합에너지와 부착력이 증가하여 AZO 박막의 결정립 크기를 증가시키며, 접촉각은 감소하였다. 또한 급속열처리 온도가 증가함에 따라 전기적 특성과 광학적 특성이 향상됨을 확인할 수 있었다. 제작된 AZO 박막은 급속열처리 시간 10분에서 온도 $200^{\circ}C$일 때, 캐리어 농도 $2.32{\times}10^{21}cm^{-3}$, 홀 이동도 $4.3cm^{-2}/V$로 가장 높은 것을 확인할 수 있었고, 가장 낮은 비저항 $1.07{\times}10^{-3}{\Omega}{\cdot}cm$과 가시광 영역(300 nm ~ 1100 nm)에서의 AZO 박막의 광 투과율은 약 86%를 얻을 수 있었다.

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Synthesis and Analysis of TiO$_2$ Particles Using an Electrically Heated Tube Furnace (전기가열 튜브로를 이용한 광촉매 TiO$_2$ 입자의 제조 및 촉매 특성 분석)

  • 현정은;배귀남;이태규
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 2003.05b
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    • pp.401-402
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    • 2003
  • TiO$_2$는 광촉매로서 자외선이 조사되면 여기상태로 되어 광활성을 나타내므로, 휘발성 유기화합물(VOCs), 악취, 중금속 물질 등을 제어하는데 널리 사용되고 있다(Lee and Biswas, 1998). TiO$_2$는 기상 및 액상 등 여러 가지 방법으로 제조되고 있는데(Morooka et al., 1989), 본 연구에서는 기상 방법의 하나인 전기가열 튜브로를 이용하여 TiOs 입자를 제조하였다. 즉, TTIP(titanium isopropoxide, Ti[OCH($CH_3$)$_2$]$_4$)와 공기를 전기가열 튜브로의 d열원을 이용하여 반응시키는 방법을 사용하였다. TiO2의 광활성에 영향을 미치는 변수로는 전기로의 온도, TTIP의 초기 농도, carrier gas의 유량, 산화시키기 위한 산소의 양, 수분의 양 등이 있다. (중략)

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A Novel Atomic Layer Deposited Al2O3 Film with Diluted NH4OH for High-Efficient c-Si Solar Cell

  • Oh, Sung-Kwen;Shin, Hong-Sik;Jeong, Kwang-Seok;Li, Meng;Lee, Horyeong;Han, Kyumin;Lee, Yongwoo;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.40-47
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    • 2014
  • In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

Effect of RF Power on the Stability of a-IGZO Thin Film Transistors

  • Choe, Hyeok-U;Gang, Geum-Sik;No, Yong-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.354-355
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    • 2013
  • 최근 디스플레이 분야에서 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 a-Si:H에 비해 비정질 상태에서도 비교적 높은 이동도를 가지고 다결정 Si 반도체에 비해 저온공정이 가능하고 대면적화가 용이한 장점 때문에 주목받고 있다. 또한 넓은 밴드갭을 가지기 때문에 가시광선 영역에서 투명하여 투명소자에도 응용이 가능하다. 본 연구에서는 RF magnetron sputtering법을 이용하여 RF power의 변화에 따라 IGZO 박막의 positive bias stress (PBS)에 대한 안정성을 조사하였다. 소결된 타겟으로는 In:Ga:ZnO를 각각 2:2:1 mol%의 조성비로 소결하여 이용하였고, 공정 조건은 초기 압력 Torr, 증착 압력 Torr, Ar:O2=18:12 sccm로 고정하였다. 공정 변수로는 130 W, 150 W, 170 W, 200 W로 변화를 주어 실험을 진행하였다. PBS 측정은 gate bias를 10 V로 고정하여 stress 시간을 각각 0, 30, 100, 300, 1,000, 3,000, 7,000초를 적용하였다. 측정 결과 RF power가 증가할수록 문턱전압의 변화량이 증가하는 것을 보였다. 130 W의 경우 4.47 V의 변화량을 보였지만 200 W의 경우는 10.01 V로 증가되어 나타났다. 따라서 RF power을 낮추어 만들어진 소자의 경우 RF power를 높여 만들어진 소자에 비해 PBS에 대한 안정성이 더 높은 결과를 확인하였다.

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Naphthopyrone Glucosides from the Seeds of Cassia tora with Inhibitory Activity on Advanced Glycation End Products (AGEs) Formation

  • Lee, Ga-Young;Jang, Dae-Sik;Lee, Yun-Mi;Kim, Jong-Min;Kim, Jin-Sook
    • Archives of Pharmacal Research
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    • v.29 no.7
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    • pp.587-590
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    • 2006
  • Three naphthopyrone glucosides, cassiaside (1), $rubrofusarin-6-O-{\beta}-D-gentiobioside$ (2), and $toralactone-9-O-{\beta}-D-gentiobioside$ (3), were isolated from the BuOH-soluble extract of the seeds of Cassia tora as active constituents, using an in vitro bioassay based on the inhibition of advanced glycation end products (AGEs) to monitor chromatographic fractionation. The structures of 1-3 were determined by spectroscopic data interpretation, particularly by extensive 1D and 2D NMR studies. All the isolates (1-3) were evaluated for the inhibitory activity on AGEs formation in vitro.

Selective etching characteristics of ITO/semiconductor and ITO/BaTiO3 structures by reactive ion ethcing (Reactive Ion Etching에 의한 ITO/반도체 및 ITO/BaTiO3 구조의 선택적 에칭 특성)

  • Han, Il-Ki;Lee, Yun-Hi;Kim, Hwe-Jong;Lee, Seok;Oh, Myung-Hwan;Lee, Jung-Il;Kim, Sun-Ho;Kang, Kwang-Nham;Park, Hong-Lee
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.152-158
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    • 1995
  • Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.

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Effects on Skin Irritation and Turnover Rate by the Control of Skin Permeability of Alpha-hydroxyacids

  • Cheon-Koo Lee;Seo
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.22 no.2
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    • pp.132-140
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    • 1996
  • The effect of a novel delivery system, water in oil emulsion containing chitosan hydrogel as a inner phase (W/O-C) was evaluated, and the relationships between the skin permeation, the skin primary irritation and the skin turnover rate of AHAs were discussed. We selected glycolic acid (GA), lactic acid (LA), malic acid (MA), and tartaric acid (TA) as model AHAs. The steady state fluxes of 4 AHAs across the excised hairless mouse skin increased as the molecular weights of the AHAs decreased. (GA>LA>MA>TA). The skin turnover times were shortened in all AHAs, compared with control. The skin permeation and the skin primary irritation of the LA decreased and the skin turnover time increased, as the pH increased. The maximum therapeutic index was obtained with pH 3.8, 0.5 M LA. It was suggested that the skin permeability of LA might be a main factor for prediction of the skin irritation and the skin turnover time. On the other hand, the W/O-C containing pH 3.8, 0.5 M LA indicated a good sustained release property of LA, compared with water in oil emulsion without chitosan hydrogel (W/O) or oil in water emulsion (O/W). The skin permeability and the skin irritation of AHAs from the W/O-C edcreased, compared with W/O or O/W, however the skin turnover time showed almost the same value as W/O or O/W. In conclusion, we suggest that the control of the skin permeation of AHAs would be an important tool for reducing the skin irritation and for maintaining the positive effect of AHAs, and the W/O-C system could be a potential candidate for future cosmetological application of AHAs.

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