• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.150-153
• /
• 2004

본 논문에서는 780 nm 고출력 레이저 다이오드의 신뢰성을 향상시키기 위하여 DLTS(deep level transient spectroscopy)을 이용하여 MOCVD(metalorganic chemical vapor deposition) 성장 조건 변화에 따른 $Al_{0.48}Ga_{0.52}As$와 $Al_{0.1}Ga_{0.9}As$ 물질에서의 깊은준위(deep level)의 거동을 조사하였다. DLTS 측정결과, MOCVD로 성장된 막에서만 나타나는 결함(defect)으로 추정되는 trap A(0.3 eV), DX center로 알려진 trap B, 갈륨(Ga) vacancy와 산소(O2) 원자의 복합체(complex)에 의한 결함인 trap D(0.6 eV) 및 EL2 라고 불리우는 trap E(0.9 eV)의 네 가지 깊은준위들이 관측되었고, 성장 조건의 변화에 따라 깊은 준위들의 농도가 감소하는 것을 관측함으로써 최적 성장 조건을 찾을 수 있었다.

• Korean Journal of Weed Science
• /
• v.18 no.4
• /
• pp.295-303
• /
• 1998

The seed dormancy is one of the peculiar characteristics of a number of weed species and it makes difficulties in weed control. To clarify the mechanism of seed dormancy, several chemicals such as $KNO_3$, KOH, thiourea, and $H_2O_2$ and phytohormone($GA_3$) were treated to dormant seeds. Among the species treated with several chemicals, the germination percentages of Setaria glauca, Ambrosia trifida and Ranunculus sceleratus were increased with $KNO_3$ and those of S. glauca, R sceleratus were increased with thiourea. Hydrogen peroxide promoted the germination of Setaria viridis and S. glauca. Germination percentages of S. viridis, S. glauca and Cyperus saraguinolentus were increased with enzyme treatment using pectinase. GA treatment enhanced the geim.ination of Eleusine indica and R sceleratus but the other species were affected slightly. Especially. E. indica showed linearity in the relationship between germination percentage and GA concentration. So, It seemed that E. indica can be used as a bioassy material for GA. Considering the phenological habits of weed species, the seeds were buried under soil for long time(more than 1 month) over winter. When seeds were buried in soil, the degree of dormancy was drastically decreased. Especially, germination of seeds buried were increased under alternating temperature. The germination rates of Persicaria ssp. and Chenopodium ssp. were increased by 50% order alternating temperature after burial for seven weeks.

• Korean Journal of Materials Research
• /
• v.4 no.5
• /
• pp.510-515
• /
• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.419-426
• /
• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.244-244
• /
• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.06a
• /
• pp.40-41
• /
• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.3
• /
• pp.215-218
• /
• 2011

A novel design of gas sensor using Ga-doped ZnO (GZO) thin films which are deposited on low temperature co-fired ceramic (LTCC) substrates is presented. The LTCC substrates with thickness of 400 ${\mu}m$ are fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The GZO thin films with different thickness are deposited on LTCC substrates, by RF magnetron sputtering method. The microstructure and sensing properties of GZO gas sensing films are analyzed as a function of the film thickness. The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The maximum sensitivity of 3.49 is obtained at 100 nm film thickness and the fastest 90% response time of 27.2 sec is obtained at 50 nm film thickness for the operating temperature of $400^{\circ}C$ to the $NO_2$ gas.

• Applied Microscopy
• /
• v.36 no.spc1
• /
• pp.25-33
• /
• 2006

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

• Journal of Powder Materials
• /
• v.22 no.1
• /
• pp.46-51
• /
• 2015

A precipitation behavior of nano-oxide particle in Fe-$5Y_2O_3$ alloy powders is studied. The mechanically alloyed Fe-$5Y_2O_3$ powders are pressed at $750^{\circ}C$ for 1h, $850^{\circ}C$ for 1h and $1150^{\circ}C$ for 1h, respectively. The results of Xray diffraction pattern analysis indicate that the $Y_2O_3$ diffraction peak disappear after mechanically alloying process, but $Y_2O_3$ and $YFe_2O_4$ complex oxide precipitates peak are observed in the powders pressed at $1150^{\circ}C$. The differential scanning calorimetry study results reveal that the formation of precipitates occur at around $1054^{\circ}C$. Based on the transmission electron microscopy analysis result, the oxide particles with a composition of Y-Fe-O are found in the Fe-$5Y_2O_3$ alloy powders pressed at 1150oC. It is thus conclude that the mechanically alloyed Fe-$5Y_2O_3$ powders have no precipitates and the oxide particles in the powders are formed by a high temperature heat-treatment.

• Membrane Journal
• /
• v.11 no.4
• /
• pp.143-151
• /
• 2001

We have fabricated mixed-ionic conducting membranes, L $a_{0.6}$S $r_{0.4}$ $Co_{0.2}$F $e_{0.8}$ $O_{3-}$$\delta$/ and L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ by the solid state method. Ceramic membranes consisted of perovskite-type structures and exhibited high relative density, >95%. Especially, dense L $a_{0.6}$S $r_{0.4}$Co $O_{3-}$$\delta$/ layer was coated on the L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membranes by using screen printing technique in order to improve oxygen ion flux. We measured oxygen ion flux on uncoated L $a_{0.6}$S $r_{0.4}$ $Co_{0.2}$F $e_{0.8}$ $O_{3-}$$\delta$/, uncoated L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/, and coated L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membranes. The L $a_{0.6}$S $r_{0.4}$ $Co_{0.2}$F $e_{0.8}$ $O_{3-}$$\delta$/ membranes showed the highest flux, 0.26 mL/min.$\textrm{cm}^2$ at 90$0^{\circ}C$, after steady state had been reached. The oxygen flux of coated L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membranes showed higher value, 0.19 mL/min.$\textrm{cm}^2$ at 95$0^{\circ}C$. This flux was as much as 2 or 3 times higher than those of uncoated L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membranes. 3-$\delta$/ membranes.X> 3-$\delta$/ membranes.membranes.