• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.186-186
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• 1999

시뮬레이션 모델 및 AES, SIMS에 의한 깊이방향 분석의 유용성을 확인하기 위해 이체 충돌모델에 기초한 몬테칼로 시뮬레이션을 수행하였다. 이를 위해, 현 시뮬레이션에서는 충돌 캐스캐이드에 의한 interstitial 및 vacancy 원자의 발생과 각 원자 층이 일정한 원자농도를 유지하도록 interstitial에 의한 vacancy의 소멸을 고려하였다. 이 모델은 AES 깊이 방향 분석에서는 AsAs/GaAs 초격자에, SIMS 깊이 방향 분석에는 Ta2O5/SiO2 초격자에 적용되었고, 실험으로부터 얻어진 결과들을 잘 나타냈다. 0.5keV Ar+ 이온 스퍼터링에 의한 AES 깊이방향 분석의 경우 AlAs 층에서 Al의 선택 스퍼터링에 의해 AlAs 층에서 As(MVV-32eV)의 Auger 강도는 GaAs 층에서보다 약 1.2배 크게 나타났다. 이 시뮬레이션은 Ta2O5(18nm)/SiO2(0.5nm)에 대한 SIMS 깊이방향 분석에서 표면 쪽으로의 1-3nm 정도의 피크(SiO+) 이동 및 decay length도 또한 잘 설명할 수 있었다. 이때, 낮은 에너지에서 보다 더 깊은 이온빔 믹싱이 발생하기 때문에 높은 에너지에서 오히려 더 좋은 분해능을 얻을 수 있었다.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.4 s.48
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• pp.471-477
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• 2004

Exposure to elevated temperatures, chemical (active oxigen), or physical stress (UV light) induces immediate physiological response, the expression of heat shock proteins in cells. Thus, cells with elevated Heat Shock Protein levels become more tolerant to stress conditions that are otherwise lethal. First, we studied on the new function of glucuronic acid (GA) as preventive material of skin aging. The application of the GA shows significant induction of Heat Shock Protein 70 kDa (HSP 70 kDa) in contrast to cells without it. GA at the concentration which can induce HSP 70 kDa, protects the cell death induced by second stress (heat shock and hydrogen peroxide) in NIH3T3 cells. Second, we studied on in vitro transdermal permeation characteristic of GA through the excised mouse skin. In this study, we compared the skin permeability of GA in water with O/W emulsion. As a result, skin permeation parameters of GA shows lag time 1.2 h, partition coefficient 0.114, permeation flult rate $0.83114 mg/cm^2/h.$ In case of lag time, O/W emulsion containing GA increase 2.48 h. Also, the total accumulation permeation content decreased in contrast to GA solution after 24 h. But it has long-term permeability of glucuronic acid. These results suggest that glucuronic acid could be a good cosmetic active ingredient.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.193.1-193.1
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• 2015

실리콘 (Si) 기판 위에 고품질의 갈륨질화물 (GaN) 박막을 성장시키기 위한 노력이 계속되고 있다. 실리콘 기판은 사파이어 기판 보다 경제적인 측면에서 유리하고, 실리콘 직접화 공정에 GaN 소자를 쉽게 접목 가능하다는 장점이 있다. GaN 박막은 2차원 전자 가스형성을 통한 고속소자, 직접 천이형 밴드갭을 이용한 발광소자 및 고전압 소자로써 활용 가능한 물질이다. 종래에는 Si(100) 및 Si(111) 기판 위에 GaN 박막 성장에 대한 연구가 주로 진행되었다. 하지만 대칭성과 격자 불일치도 등 결정학적 특성을 고려할 때 Si(100) 기판 위에 고품질의 GaN 박막을 성장시키는 것은 쉽지 않다. Si(111) 기판은 실리콘 소자 직접화 공정에 적합하지 못한 단점을 가지고 있다. 반면, 최근 Si(110) 기판 위에서 비등방적 변형 제어를 통한 고품질 GaN 박막 성장이 보고 되어 실리콘 집적 소자와 결합한 고전압 소자 및 고속소자 구현에 관한 연구가 진행되고 있다. 본 연구에서는 투과전자현미경 연구를 바탕으로 Si(110) 기판 위에 성장된 GaN의 미세구조에 관한 연구를 소개한다. 열팽창계수의 차이에 의한 GaN 박막 내 결함 생성을 줄이기 위하여 AlN 완충층이 사용되었다. GaN 박막을 암모니아 ($NH_3$) 유량이 다른 조건에서 성장시킴으로써 GaN 박막 미세구조의 암모니아 유량 의존성에 관한 연구를 진행하였다. GaN 박막에서 투과전자현미경 연구와 X-ray 회절 연구를 통하여 결함 거동 및 결정성을 확인하였다. $NH_3$ 유랑이 증가함에 따라 GaN의 성장 거동이 3차원에서 2차원으로 변화됨을 관찰하였다. 또한, 전위밀도의 증가도 확인되었다. $NH_3$ 유량이 낮은 경우 GaN 전위는 AlN와 GaN 경계에 주로 위치하고 GaN 표면 근처에는 전위밀도가 감소하였으나, $NH_3$ 유량이 높을 경우 GaN 박막 표면까지 전위가 관통됨을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.479-484
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• 2011

In this paper, investigations of thick film $La_{0.75}Sr_{0.25}Ga_{0.8}Mg_{0.16}Fe_{0.04}O_{3-{\delta}}$ (LSGMF) cells fabricated via spin coating on either NiO-YSZ anode or $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_3$ (LSGF) cathode substrates are presented. A La-doped $CeO_2$ (LDC) layer is inserted between NiO-YSZ and LSGMF in order to prevent reactions from occurring during co-firing. For the LSGF cathode-supported cell, no interlayer was required because the components of the cathode are the same as those of LSGMF with the exception of Mg. An LSGMF electrolyte slurry was deposited homogeneously on the porous supports via spin coating. The current-voltage characteristics of the anode and cathode supported LSGMF cells at temperatures between $700^{\circ}C$ and $850^{\circ}C$ are described. The LSGF cathode supported cell demonstrates a theoretical OCV and a power density of ~420 mW $cm^2$ at $800^{\circ}C$, whereas the NiO-YSZ anode supported cell with the LDC interlayer demonstrates a maximum power density of ~350 mW $cm^2$ at $800^{\circ}C$, which decreased more rapidly than the cathode supported cell despite the presence of the LDC interlayer. Potential causes of the degradation at temperatures over $700^{\circ}C$ are also discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.37-43
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• 2013

Conductivity of LSGMC materials were affected by secondary phase segregation, composition and synthetic route. $La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.1}Co_{0.1}O_{3-{\delta}}$ (LSGMC) powders were prepared using the glycine nitrate process to produce high surface area and compositionally homogeneous powders. The powders were synthesized with different 0.5, 1, 1.5, 2, 2.5 of glycine/cation molar ratios. A single perovskite phase from the synthesized powders was characterized with X-ray diffraction patterns. The obtained sintered pellets showed the dense grain microstructure. In case of 1.5 molar ratio, its density was higher than the others. The electrical conductivity measured at $800^{\circ}C$ was observed to be 0.131 $Scm^{-1}$. In addition, the linear thermal expansion behavior was indicated between $25^{\circ}C$ and $800^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.85-85
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• 2011

RF magnetron co-sputtering을 이용하여 RF power 및 공정 압력에 따라 GZO 및 IGZO 박막을 유리기판 위에 제작하고 투명전극으로 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}Torr$, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리기판을 사용하였다. 소결된 타겟으로 ZnO, $In_2O_3$ 및 $Ga_2O_3$을 이용하였으며, 각각의 타겟은 독립 된 RF파워를 변화시키며 투명전극의 성분비를 조절하였으며, 증착 압력은 10 m에서 100 mTorr까지, 기판과의 거리는 25 mm에서 65 mm까지 변화시키며 박막을 제작하였다. 유리기판 위에 불순물이 첨가된 모든 ZnO 박막에서 (002) 면의 우선배향성이 관찰되었고, 3.4eV에서 3.5eV 정도의 광학적 밴드갭을 가지며 80% 이상의 투과율을 나타내었다. GZO 박막의 경우 증착 조건에 따라 투명전극에 요구되는 $5*10^{-3}{\Omega}-cm$ 이하의 전기적특성을 가짐을 보였으며, gallium 성분이 0%에서 6%로 증가함에 따라 3.3eV에서 3.5eV로 blue-shift하였으며, 비저항은 0.02에서 $0.005{\Omega}cm$로 낮아졌으며 이동도는 $4.7cm^2V^{-1}s^{-1}$에서 $2.7cm^2V^{-1}s^{-1}$로 보이며 GZO 물질이 투명전극으로서 기존의 ITO 물질 대체 가능성을 확인하였다. IGZO 박막은 In과 Ga의 함량에 따라 저항률의 변화가 크게 나타났으며, In의 함량이 많을수록 이동도, 캐리어 농도의 증가로 저항률은 감소하였다.

• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.10 no.1
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• pp.11-19
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• 2007

Purpose: Henoch-Sch$\"{o}$nlein purpura (HSP) is a systemic vasculitis involving the skin, joints, gastrointestinal tract, and kidney. Although the pathogenesis of HSP is still unclear, tumor necrosis factor (TNF-${\alpha}$) is regarded as an important cytokine contributing to the disease. The goal of this study was to determine the role of TNF-${\alpha}$ in the pathogenesis of HSP, and to evaluate the TNF-${\alpha}$ polymorphism for genetic susceptibility to HSP. Methods: From March 2004 to November 2005, 40 children with HSP and 32 healthy controls were included. Serum TNF-${\alpha}$ levels were measured using the ELISA method during the acute and convalescent phase of HSP. The genotypic and allelic frequencies of the TNF-${\alpha}$ gene polymorphisms at positions -308 and -238 were evaluated in patients and controls. Results: Serum TNF-${\alpha}$ levels were $23.17{\pm}11.31$ pg/mL in the acute phase of children with HSP and $10.56{\pm}5.59$ pg/mL in the convalescent phase (p=0.000). There was no significant correlation between the serum TNF-${\alpha}$ levels and the clinical scores of HSP (r=0.310, p=0.070). The genotypic frequency of the TNF-${\alpha}$ -308 polymorphism in children with HSP was not significantly different compared to healthy controls (GG 80%, GA 20% vs. GG 93.8%, GA 6.2%; p=0.094). The genotypic frequency of the TNF-${\alpha}$ -238 polymorphism in children with HSP was not significantly different (GG 97.5%, GA 2.5% vs. GG 93.8%, GA 6.3%; p=0.429). Conclusion: TNF-${\alpha}$ is assumed to be the main cytokine associated with the pathogenesis of HSP during the acute phase. However, the presence of TNF-${\alpha}$ gene polymorphisms at positions -308 and -238 did not distinguish children with HSP from normal controls.

• Journal of the Korean Chemical Society
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• v.38 no.3
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• pp.208-213
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• 1994

The solubility of i-butyl bromide in nitrobenzene have been measured at 19, 25 and $40^{\circ}C$ in the presence and absence of gallium bromide. In the presence of gallium bromide, 1 : 1 complex, $i-C_4H_9Br{\cdot}GaBr_3$ is formed in the solution. The instability constant K of the complex formation was evaluated from the following equilibrium equation. $i-C_4H_9Br{\cdot}GaBr_3{\rightleftharpoons}C_4H_9Br + 1/2Ga_2Br_6.$ From these result, it seems that the stabilities of the complex formation, gallium bromide with alkyl bromide, are directly related with those of the carbonium ions of alkyl bromide.