통합 검색 | Korea Science

김현석;성만영;김상식
- 한국전기전자재료학회논문지
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- 제16권2호
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- pp.89-96
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- 2003
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.
https://doi.org/10.4313/JKEM.2003.16.2.089 인용 PDF KSCI

노권선;류광현;장순호;여철현
- 대한화학회지
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- 제40권5호
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- pp.295-301
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- 1996
$CaGa_1-xFexO_3-y$계의 x=0.25, 0.50, 0.75 및 1.00에 해당하는 고용체를 $1150^{\circ}C$, 대기압하에서 제조하였다. X-선 회절분석, Mohr염 정정, Mossbauer 분광분석을 수행하여 합성된 고용체들의 구조, 비화학량론적 화학식 및 양이온들의 분포를 결정한 후 전기전도도와 자기측정을 수행하여 물성에 관한 논의를 하였다. X-선 회절분석으로부터 얻은 모든 조성의 결정계는 브라운밀러릿 사방정계이다. 환산 격자부피는 단위세포의 차원이 다른 X=0.25의 조성을 제외하고 x값이 증가함에 따라 직선성을 가지고 증가한다. Mohr염분석 결과 고용체들은 $Fe^{4+}$ 이온을 포함하지 않고 산소공위의 몰수인 y값은 0.50으로 고정된 값을 가진다. Mossbauer 분광분석으로부터 Fe 이온의 산화상태, 배위상태, 브라운밀러릿 구조 및 $Ga^{3+}$와 $Fe^{3+}$ 이온의 분포를 논의하였다. 전기전도도와 활성화에너지는 x값이 증가함에 따라 각각 증가와 감소하고 이들로부터 전자 전기전도 메커니즘을 제안한다. x=0.50~1.00의 조성을 냉각하면서 자기측정을 수행할 때 열적 자기 히스테리시스가 나타나며 이러한 현상을 공간군과 Dzyaloshinsky-Moriya 상호작용을 기초로 논의하였다.
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최현태;배인호
- E2M - 전기 전자와 첨단 소재
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- 제9권4호
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- pp.372-378
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- 1996
The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.
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