• Title/Summary/Keyword: $Fe_2O_3$-doped

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Colored Cubic Zirconia(CCZ) Single Crystal Growth by Skull Method (SKull법에 의한 Colored Cubic Zirconia(CCZ)단결정 성장)

  • 김석호;최종건;정대식;오근호
    • Journal of the Korean Ceramic Society
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    • v.25 no.5
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    • pp.443-448
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    • 1988
  • Colored Cubic Zircona(CCZ) single crystals were grown by the skull melting method. The grown crystals were doped with up to 0.1wt% transition (Cu, Ni, Co, Ti, Fe, Mo, Cr, V, Mn) metal ions on ZrO2-Y2O3(9.5~10mol%) and their Optical transmission spectra(λ=300~800nm)data were obtained. Various colors were pronounced due to dopant effects in the grown Crystals.

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Phase Evolution Behavior of (Bi,Nd)(Fe,Ti)$O_3$ Ceramics and Thin Films

  • Kim, Kyung-Man;Byun, Seung-Hyun;Yang, Pan;Lee, Yoon-Ho;Lee, Jai-Yeoul;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.331-332
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    • 2008
  • Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

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Effect of the hetero-epitaxial ZnO buffer layer for the formation of As-doped ZnO thin films (Hetero-epitaxial ZnO 버퍼층이 As-doped ZnO 박막의 증착조건에 미치는 영향)

  • Lee, Hong-Chan;Choi, Won-Kook;Shim, Kwang-Bo;Oh, Young-Jei
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.216-221
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    • 2006
  • ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

Poly(3,4-ethylenedioxythiophene) Electrodes Doped with Anionic Metalloporphyrins

  • 송의환;여인형;백운기
    • Bulletin of the Korean Chemical Society
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    • v.20 no.11
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    • pp.1303-1308
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    • 1999
  • Conducting poly(3,4-ethylenedioxythiophene) (PEDT) films with metalloporphyrins incorporated as the counter ions were prepared by electropolymerization of the monomer in the presence of metal-tetra(sulfonatophenyl) porphyrin anions. Cathodic reduction of oxygen on the resulting conducting polymer films was studied. The overpotential for O2 reduction on electrodes with cobalt-porphyrin complex was significantly smaller in acidic solutions than on gold. In basic solutions, the overpotential at low current densities was close to those on platinum and gold. Polymer electrode with Co-complex yielded higher limiting currents than with Fe-complex, although the Co-complex polymer electrode was a poorer electrocatalyst for O2 reduction in the activation range of potential than the Fe counterpart. From the rotating ring-disk electrode experiments, oxygen reduction was shown to proceed through either a 4-electron pathway or a 2-electron pathway. In contrast to the polypyr-role-based electrodes, the PEDT-based metalloporphyrin electrodes were stable with wider potential windows, including the oxygen reduction potential. Their electrocatalytic properties were maintained at temperatures up to 80℃ in KOH solutions.

Effects of Gallia Additions on Sintering Behavior of 상용분말로 제조된 $Ce_{0.8}Gd_{0.2}O_{2-\delta}$ Ceramics Prepared by Commercial Powders (상용분말로 제조된 $Ce_{0.8}Gd_{0.2}O_{2-\delta}$ 세라믹스의 소결성에 미치는 $Ga_2O_3$의 첨가효과)

  • 최광훈;박혜영;이주신;류봉기
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.113-113
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    • 2003
  • 고체전해질체로 사용되는 산소이온전도체로는 $Y_2$O$_3$ 안정화 ZrO$_2$가 널리 연구되어 왔고, 실질적으로 많이 사용되고 있다. 그러나 특히 대전력을 얻고자 하는 고체전해질 연료전지 분야에 있어서는 다른 재료를 찾고자 하는 많은 노력이 이루어지고 있다. 이에 CeO$_2$계 세라믹스는 ZrO$_2$계보다 낮은 온도에서 더 높은 이온전도도를 가지고 있어 많은 주목을 받고 있다. 그러나 이 CeO$_2$계를 소결시키는 데는 1$600^{\circ}C$이상의 고온을 필요로 한다. 이 런 고온의 소결온도를 낮추기 위한 방안으로는 균일하고 미세한 출발원료를 사용하거나 소결조제를 첨가하는 것 등이 있다. 균일하고 미세한 출발원료를 제조하는 연구는 국내외에서 많이 이루어지고 있으나 소결조제 첨가에 대한 연구는 별로 이루어진게 없다. 다만 국외에서 Co$_3$O$_4$, Fe$_2$O$_3$, CoO 첨가에 의한 연구가 최근에 이루어지고 있으며, 본 연구실을 중심으로 Ga$_2$O$_3$, $Al_2$O$_3$ 첨가에 대한 연구가 이루어지고 있다. 본 연구실에서는 그간 공침법으로 제조되는 소결조제 첨가 Gd$_2$O$_3$-doped CeO$_2$ 분말을 사용하여 소결조제 첨가효과를 살펴보았다.

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Photoluminescence properties of Mn4+-activated Li2ZnSn2O6 red phosphors

  • Choi, Byoung Su;Lee, Dong Hwa;Ryu, Jeong Ho;Cho, Hyun
    • Journal of Ceramic Processing Research
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    • v.20 no.1
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    • pp.80-83
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    • 2019
  • The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

Current-voltage characteristics of n-AZO/p-Si-rod heterojunction

  • Lee, Seong-Gwang;Choe, Jin-Seong;Jeong, Nan-Ju;Kim, Yun-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.338.2-338.2
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    • 2016
  • Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

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Enhanced Field Emission Behavior from Boron-Doped Double-walled Carbon Nanotubes Synthesized by Catalytic Chemical Vapor Deposition

  • Kang, J.H.;Jang, H.C.;Choi, J.M.;Lyu, S.C.;Sok, J.H.
    • Journal of Magnetics
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    • v.17 no.1
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    • pp.9-12
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    • 2012
  • Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

Synthesis and Characterization of LSCF/CGO Composite Used as SOFC Cathode Materials (SOFC 용 LSCF/CGO 공기극의 제조 및 특성연구)

  • Park, Jae-Layng;Lim, Tak-Hyoung;Lee, Seung-Bok;Park, Seok-Joo;Shin, Dong-Ryul;Song, Rak-Hyun
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.184-186
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    • 2009
  • Composites of LSCF($La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ and CGO(gadolinium doped ceria) is an efficient candidate cathode material with CGO electrolytes. In this study, LSCF with exact perovskite structure was synthesized by using solid state reaction(SSR) method. The optimized temperature to synthesize $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ with rhombohedral structure. was $1100^{\circ}C$. The polarization resistance of the LSCF/CGO(50:50 wt.%) was smaller than those of other composite cathodes. The analysis of the EIS data of LSCF/CGO suggests that the diffusion and adsorption-desorption of oxygen can be the key process in the cathodic reaction of SOFC using LSCF/CGO as cathode material.

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Fabrication of LaySr1-yFexTi1-xO3-based Nanocomposite Solid Oxide Fuel Cell Anodes by Infiltration (Infiltration법을 이용한 LaySr1-yFexTi1-xO3계 나노복합 연료극 제조)

  • Yoon, Jong-Seol;Choe, Yeong-Ju;Hwang, Hae-Jin
    • Journal of the Korean Ceramic Society
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    • v.51 no.3
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    • pp.224-230
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    • 2014
  • Nano-sized gadolinium-doped ceria (GDC)/nickel particle-dispersed $La_ySr_{1-y}Ti_{1-x}Fe_xO_3$ (LSFTO)-based composite solid oxide fuel cell anodes were fabricated by an infiltration method and the effects of the GDC/Ni nanoparticles on the anode polarization resistance and cell performance were investigated in terms of the infiltration time and nickel content. The anodic polarization resistance of the LSFTO anode was significantly enhanced by GDC and/or Ni infiltration and it decreased with increasing infiltration time and Ni content, respectively. It is believed that the observed phenomena are associated with enhancement of the ionic conductivity and catalytic activity in the nanocomposite anodes by the addition of GDC and Ni. Power densities of cells with the LSFTO and LSFTO-GDC/Ni nanocomposite anodes were 150 and $300mW/cm^2$ at $800^{\circ}C$, respectively.