• Journal of the Korean Institute of Gas
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• v.2 no.4
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• pp.34-41
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• 1998

To oxide film, $A1_2O_3,\;Ta_2O_5$ and $ZrO_2$, coated on stainless steel (SUS410, SUS304) and pure Fe using RF magnetron sputtering method, the corrosion resistance on oxide coatings was studied using electrochemical measurement. Also, the adherence between film and substarte was studied. The adherence index ( $\chi$ ) was determined by the measure of micro hardness test. In this paper, we know that oxide film coated on SUS304 have better corrosion resistance than that coated on SUS410. In oxide film, the difference of corrosion resistance due to crystal structure have not been showed. In evaluating defect area rate of ceramic coated materials, CPCD method can be used effectively. In the micro-hardness test, with $1{\mu}m$ thickness film, it has only one the value of $\chi$. Above $2{\mu}m$ thickness film, however, get another value of $\chi$ as the cracks in film. The oxide film adhere well on the mild materials such as pure steel than high intensity materials like stainless.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.631-635
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• 2017

We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.85-91
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• 2024

In this study, we investigated a method of growing single crystal 𝛽-Ga₂O₃ thin films on a c-plane sapphire substrate using MOCVD. We confirmed the optimal growth conditions to increase the crystallinity of the 𝛽-Ga₂O₃ thin film and confirmed the effect of the ratio between O₂ and Ga precursors on crystal growth on the crystallinity of the thin film. The growth temperature range was 600~1100℃, and crystallinity was analyzed when the O₂/TMGa ratio was 800~6000. As a result, the highest crystallinity thin film was obtained when the molar ratio between precursors was 2400 at 1100℃. The surface of the thin film was observed with a FE-SEM and XRD ω-scan of the thin film, the FWHM was found to be 1.17° and 1.43° at the and (${\bar{2}}01$) and (${\bar{4}}02$) diffraction peaks. The optical band gap energy obtained was 4.78 ~ 4.88 eV, and the films showed a transmittance of over 80% in the near-ultraviolet and visible light regions.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.293-297
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• 1993

Exchange coupled $NiFe/TbCo/Sio_{2}$ thin films for magnetoresistive heads were sputter deposited using RF diode sputtering method, and their magnetic characteristics were measured. TbCo films were deposited using a composite target, which is composed of Tb chips epoxied on a Co target. NiFe($400\AA$)/TbCo($1500\AA$)/$SiO_{2}$($500\AA$) films were deposited using a TbCo target having 30 % of Tb area ratio, which showed 25 Oe of the exchange field without substrate bias and 12 Oe with -55 V of substrate bias. The effective in-plane coercivities of the three layer films fabricated with less than -55 V of substrate bias were approximately proportional to the perpendicular coercivities of the TbCo layer only. The films fabricated with a Theo target of 28 % area ratio showed the same trend. However, the exchange field decreased to 4 Oe without the substrate bias and 7 Oe with -55 V of substrate bias. In the films fabricated with 1000 W of power and the target of 36 % area ratio exhibited 100 Oe of exchange field and 3 Oe of coercivity. As the thickness of NiFe layer increased, the exchange field decreased.

• Composites Research
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• v.26 no.1
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• pp.60-65
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• 2013

A nanolaminate consisting of alternate layers of aluminium oxide ($Al_2O_3$) (5 nm) and zirconium oxide ($ZrO_2$) (20 nm) was deposited at an optimized oxygen partial pressure of $3{\times}10^{-2}$ mbar by pulsed laser deposition. The nanolaminate film was analysed using high temperature X-ray diffraction (HTXRD) to study phase transition and thermal expansion behaviour. The surface morphology was investigated using field emission scanning electron microscopy (FE-SEM). High temperature X-ray diffraction indicated the crystallization temperature of tetragonal zirconia in the $Al_2O_3/ZrO_2$ multilayer-film was 873 K. The mean linear thermal expansion coefficient of tetragonal $ZrO_2$ was $4.7{\times}10^{-6}\;K^{-1}$ along a axis, while it was $13.68{\times}10^{-6}\;K{-1}$ along c axis in the temperature range 873-1373 K. The alumina was in amorphous nature. The FESEM studies showed the formation of uniform crystallites of zirconia with dense surface.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.155-159
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• 2003

We report on the annealing effect and ferromagnetic characteristics of Zn$_{0.7}$Mn$_{0.3}$O film prepared by sol-gel method on the silicon (100) substrate using field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry. Magnetic measurements show thatZn$_{0.7}$Mn$_{0.3}$O films exhibit ferromagnetism at 5 K revealing the coercive field of ∼110 Oe for as grown sample and 360, 1035 Oe for samples annealed at 700, 800 $^{\circ}C$, respectively. Our experimental evidence suggests that ferromagnetic precipitates of a manganese oxide may be responsible for the observed ferromagnetic behaviors of the film.he film.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.619-623
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• 2006

Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.

• Journal of Surface Science and Engineering
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• v.19 no.4
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• pp.133-139
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• 1986

The effects of alternating voltage, $Cl^-$ ion and pH on the corrosion of Zn and Zn-Fe alloys have been investigated by using electrochemical techniques in $Ca(OH)_2$ solutions. The passive film $Zn(OH)_2$ was initially formed on the Zn surface and gradually transformed to $Ca(Zn(OH)_3)_2{\cdot}2H_2O$, which was identified with the X-ray diffraction method, SEM micrograph and EPMA. The passivity current increased with increasing alternating voltage and decrease AC frequency. ${\xi}$ phase in Zn-Fe alloys reduced the effects of AC. The effect of $Cl^-$ ion on the passivity current of Zn was similar to the AC effect, resulting in pits on Zn. It was also found that the passive region of Zn decreased rapidly below pH 10.3 of the solution.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.163-168
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• 2004

We prepared ultra thin film structure of Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/Ni$_{80}$Fe$_{20/(l～15 nm)}$Ta(5 nm) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 nm thickness show the B$_{bulk}$ = 0 and B$_{surf}$=-3 ${\times}$ 10$^{-7}$(J/$m^2$). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 nm - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.