• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2477-2480
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• 2007

MgAl2O4:Eu3+ red-light emitting powder phosphor was prepared at temperature as low as 500 oC within a few minutes by using the combustion route. The prepared powder was characterized by X-ray diffraction, scanning electron microscopy and Fourier-transform infrared spectrometry. The luminescence of Eu3+-activated MgAl2O4 shows a strong red emission dominant peak around 611 nm, which can be attributed to the 5D0-7F2 transition of Eu3+ ions from the synthesized phosphor particles under excitation (394 nm). Electron paramagnetic resonance (EPR) measurements at the X-band showed that no signal could be attributed to Eu2+ ions in MgAl2O4.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1076-1078
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• 2004

In this paper, we report $Eu^{2+}$ activated green phosphor $Ba_2CaMgSi_2O_8:Eu^{2+}$. This phosphor absorbs ultroviolet radation and emits a green visible light. The phosphors were synthesized by conventional solid state reaction method. Reagent grade $BaCO_3$, $CaCO_3$, MgO, $SiO_2$, $Eu_2O_3$ were used as raw materials. The raw materials were mixed thoroughly with an appropriate amount of ethanol in an agate mortar and then dried at 90 $^{\circ}C$ for 2 hours. The mixture was sintered at 900 $^{\circ}C$ for 2 hours and reheated at the mild reducing atmosphere 5% $H_2$ gas mixed with 95% $N_2$ gas at about 900 $^{\circ}C$ to 1250 $^{\circ}C$ for 2 hours. The photoluminescence spectra of the phosphor powders were measured by a fluorescent spectrophotometer. The crystal structure of phosphor powders were investigated by X-ray diffractometer.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.97-100
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• 2004

We report $EU^{2+}$ activated green phosphor $Ba_{2}CaMgSi_{2}O_{8}:Eu^{2+}$. The phosphor absorbs ultroviolet radation and emits a green visible light. The phosphors were synthesized by conventional solid state reaction method. The high purity $BaCO_3$, $CaCO_3$, MgO, $SiO_2$, $Eu_{2}O_{3}$ were used as raw materials. The raw materials were mixed thoroughly with an appropriate amount of ethanol in an agate mortar and then dried at $90^{\circ}C$ for 2 hours. The mixture was sintered at $900^{\circ}C$ for 2 hours and reheated at the mild reducing atmosphere 5% $H_2$ gas mixed with 95% $N_2$ gas at about $900^{\circ}C$ to $1200^{\circ}C$ for 2 hours. The photoluminescence spectra of the phosphor powders were measured by a fluorescent spectrophotometer. The crystal structure of phosphor powders were investigated by X -ray diffractometer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국세라믹학회지
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• 제43권5호
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.32-35
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• 2006

For the white UV-LED applications, $Eu^{2+}$-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue. green or blue-green light depending on the starting materials for synthesis. In addition, the structure was also changed when the different starting materials were used. When CaO and $CaCO_3$ was used as a starting material. tetragonal $Ca_2Al_2SiO_7$ was formed and blue-green and pure green light was emitted. respectively. However. in the case of $CaSiO_3$, triclinic $CaAl_2Si2O_8$ was formed and only pure blue emission was detected. The maximum emission intensity was obtained from $CaAl_2Si_2O_8:Eu^{2+}$ phosphors, which intensity was about 1.4 times higher than that of YAG:$Ce^{3+}$ phosphor used for blue LED.

• 한국세라믹학회지
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• 제43권3호
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.647-649
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• 2004

We have synthesized phosphor in the system CaO-$Al_2O_3-SiO_2$ by combinatorial polymerized-complex method. The application of combinatorial synthesis and characterization of luminescent materials has been enlarged to identification and optimization in interesting new phosphor. In this study, we investigated luminescent properties of above-mentioned materials by excitation and emission spectra. In $Eu^{2+}$ activated $Ca_1Al_2Si_2O_8$ phosphor emit the blue light.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.581-584
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• 2008

$BaMgP_2O_7$:Eu,Mn phosphors for white emission were synthesized and their luminescent properties were investigated under UV excitation. The phosphor emits two colors: a blue band by $Eu^{2+}$ and a red band by $Mn^{2+}$. Due to the efficient energy transfer from $Eu^{2+}$ to $Mn^{2+}$, the red emission positioned at 615 nm is greatly enhanced with increasing $Mn^{2+}$ content up to 17.5 mol%.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.763-769
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• 1997

In this study we have synthesized Zno:Eu phosphors under various sintering atmospheres and temperatures. The analysis of X-ray diffractometer measurement indicates that for Zno:EuCl$_3$ phosphors sintered in air and vacuum 뗘 exists in the host lattice as Eu$_2$O$_3$and EuOCl respectively. From the photoluminescence for the phosphors sintered in vacuum Eu removes the broad-band emission of the ZnO host consequently isolating the red emission due to Eu$^{3+}$ ion and improves the color purity of red emission. The photoluminescence excitation and time resolving spectrum measurements suggest that energy-transfer process occurres from the self-activated defect center in ZnO host the Eu$^{3+}$ ion which exist in the host lattice in the form of EuOCl.