• 한국IT서비스학회:학술대회논문집
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• 2002.11a
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• pp.327-333
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• 2002

현재까지 e-비즈니스와 관련된 많은 자료들과 솔루션들이 발표되었지만 기업을 위한 e-비즈니스 환경에 IT 기술을 접목시켜 기업의 내부의 IT 기술과 솔루션에 대한 연구가 활발하지 않은 듯 하다. e-비즈니스의 유형은 기업과 고객(B2C), 기업과 기업(B2B), 국가와 기업(G2B), 국가와 국가(G2G) 등으로 세분화 할 수 있으나, 가장 중심적 역할을 하는 주체는 기업 조직이라고 하겠다. 본 연구에서는 많은 e-비즈니스의 구현 기반 기술 중에서 기업 내부 측면의 e-비즈니스 구현 기반기술과 관련된 IT 기술들은 전사적 자원관리를 위한 ERP(Enterprise Resource Planning)와 지식 기반의 정보 분석을 위한 DW/CRM(Data Warehouse/ Customer Relationship Management), 기업내부의 정보 통로인 EIP(Enterprise Information Portal}, 기업내부의 이기종 어플리케이션간의 통합을 위한 EAI(Enterprise Application Integration)와 경영층의 전략적인 의사결정을 지원하기 위한 SEM(Strategy Executive Management), 확장 ERP 개념인 SCM(Supply Chain Management) 기술에 대한 개념적 이해와 기업내부의 e-비즈니스 환경을 위한 적용방안을 밝히고 각 IT별 솔루션의 분류함에 의해 기업의 e-비즈니스 시스템의 구현 방향을 제시하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.83-83
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• 2000

MBE법으로 성장시킨 Cd1-xMgxTe 박막을 조성비 (x=0, 0.23, 0.32, 0.43)에 따라 타원편광 분석기로 측정하여 연구하였다. E0 critical point energy 아래에서 나타나는 간섭무늬를 제거하기 위해 multilayer calculation을 수행했고 ellipsometric data를 2번 미분하여 계산하는 Critical Point Parabolic Band(CPPB) model을 사용하여 E0, E0+Δ0, E1, E1,+Δ1, and E0'critical point energy 들을 구할 수 있었다. 특히 E2 peak region 에서는 종전의 고상시료 (bulk)에서 측정 발표된 값보다도 매우 높고 명확한 <$\varepsilon$2>값이 측정되어, E2와 E、0 peak가 명확하게 분리되는 것을 볼 수 있었다. 또한 Mg의 조성비에 따라 critical point energy 가 linear 하게 변화됨이 관측되었다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.168-175
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• 2017

In this paper, a 5V small-area NMOS-diode eFuse OTP memory cell is proposed. This cell which is used in PMICs consists of a 5V NMOS transistor and an eFuse link as a memory part, based on a BCD process. Also, a regulated voltage of V2V ($=2.0V{\pm}10%$) instead of the conventional VDD is used to the pull-up loads of a VREF circuit and a BL S/A circuit to obtain a wider operational voltage range of the eFuse memory cell. When this proposed cells are used in the simulation, their sensing resistances are found to be $15.9k{\Omega}$ and $32.9k{\Omega}$, in the normal read mode and in the program-verify-read mode, respectively. Furthermore, the read current flowing through a non-blown eFuse is restricted to $97.7{\mu}A$. Thus, the eFuse link of a non-blown eFuse OTP memory cell is kept non-blown. The layout area of the designed 1kb eFuse OTP memory IP based on Dongbu HiTek's BCD process is $168.39{\mu}m{\times}479.45{\mu}m(=0.08mm^2)$.

• Journal of Animal Reproduction and Biotechnology
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• v.35 no.2
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• pp.155-162
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• 2020

Equine follicle stimulating hormone receptor (eFSHR) has a large extracellular domain and an intracellular domain containing approximately 10 phosphorylation sites within the G protein-coupled receptor. This study was conducted to analyze the function of phosphorylation sties at the eFSHR C-terminal region. We constructed a mutant of eFSHR, in which the C-terminal cytoplasmic tail was truncated at residue 641 (eFSHR-t641). This removed 10 potential phosphorylation sites from the C-terminal region of the intracellular loop. The eFSHR-wild type (eFSHR-wt) and eFSHR-t641 cDNAs were subcloned into the pCMV-ARMS1-PK2 expression vector. These plasmids were transfected into PathHunter CHO-K1 Parental cells expressing β-arrestin 2 enzyme acceptor fusion protein and analyzed for agonist-induced cAMP response. The cAMP response in cells expressing eFSHR-t641 was lower than the response in cells expressing eFSHR-wt. EC₅₀ values of eFSHR-wt and eFSHR-t641 were 1079 ng/mL and 1834 ng/mL, respectively. eFSHR-t641 was approximately 0.58-fold compared with that of eFSHR-wt. The maximal response in eFSHR-wt and eFSHR-t641 was 24.7 nM and 16.7 nM, respectively. The Rmax value of phosphorylation sites in eFSHR-t641 was also decreased to approximately 68.4% of that in eFSHR-wt. The collective data implicate that the phosphorylation sites in the eFSHR C-terminal region have a pivotal role in signal transduction in PathHunter CHO-K1 cells, and indicate that β-arrestin is involved in coupling the activated receptors to the internalization system.

• Journal of the Korean Society of Food Science and Nutrition
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• v.28 no.6
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• pp.1355-1363
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• 1999

The purpose of this study was to investigate the effects of vitamin E on liver microsomal cytochrome P450 contents and xanthine oxidase activity in acute cadmium poisoned rats. Sprague Dawley male rats weighing 100$\pm$10g were randomly assigned to one normal and three cadmium injected groups. Cadmium injected groups were fed vitamin E free diet(0E Cd group), 40mg vitamin E per kg diet(40E Cd group) or 400mg vitamin E per kg diet(400E Cd group). Vitamin E level of normal group was 40mg per kg diet. Animals were injected intraperitoneally with 2.0mg Cd2+/kg bw for 4 days after the rats were fed diets with three different levels of vitamin E for 2 and 4 weeks. Body weight, food intake and feed efficiency ratio of cadmium injected animals, were decreased compared with those of normal group. The weights of liver and kidney in cadmium injected groups were not different from those of normal group. Cadmium contents of liver in cadmium groups were 160 fold higher those that of normal group. Accumulation of cadmium poisoned rat liver was reduced by vitamin E supplementation. Contents of blood hemoglobin and hematocrit in 0E Cd groups were decreased to 2~ 14% of those of the other groups. Contents of serum triglyceride in all experimental groups were not significantly different each other. Levels of serum total cholesterol, LDL cholesterol and antherogenic index in 0E Cd and 40E Cd groups were higher than those of normal group, while the contents of HDL cholesterol in 0E Cd and 40E Cd groups were lower than those of normal group. Xanthine oxidase(XOD) activity and cytochrome P450 contents in the liver were significantly increased in cadmium injected groups but these were reduced by vitamin E supplementations. The present results indicate that acute cadmium poisoning in rats causes increasing free radical generation systems in the liver and that leads to liver tissue damage. But these abnormalities can be reduced by dietary vitamin E supplementations.

• Clinical and Experimental Reproductive Medicine
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• v.37 no.4
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• pp.349-359
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• 2010

Objective: This study was performed to compare the clinical outcome of elective single embryo transfer (eSET) performed at the cleavage stage to that of elective double embryo transfer (eDET). Methods: Of the women less than 36 years old who visited Daegu Maria from January 2008 to April 2009, the only women (n=330) with more than 8 mm of endometrial thickness and at least one good quality embryo, who were treated with GnRH agonist long protocol, were included in this study. After information about complications that can arise by multiple embryo transfer, either eSET or eDET was conducted by their request (167 and 163, respectively).Results: The implantation rate of eSET group was significantly higher than that of eDET group (53.9% vs. 40.2%, p<0.01). The twin pregnancy rate of eSET group was significantly lower than that of eDET group (1.1% vs. 32.3%, p<0.001). However, there were no significant differences between two groups in the clinical pregnancy (53.3% vs. 60.7%, p=0.172), ongoing pregnancy (47.3% vs. 54.6%, p=0.185) and live birth rates (44.9% vs. 50.9%, p=0.275). The number of the surplus embryos which developed to the blastocyst stage and cryopreserved at that stage was significantly higher in eSET group than that of eDET group ($3.2{\pm}2.6$ vs. $2.1{\pm}2.4$, p<0.001). Conclusion: These results suggest that eSET should reduce significantly the multiple baby pregnancy without decreasing the whole pregnancy rate in women with less than 36 years old.

• International Commerce and Information Review
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• v.3 no.2
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• pp.17-27
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• 2001

The paper at first gives an introduction to e-commerce, recalls the birth and the growth of an e-commerce giant Chinapages.com in the tough environment in the primary stage of the development of e-commerce in China, provides an overview of its e-business scope and its experience in its e-business development, then describes its present favorable and unfavorable e-business e-environment and its challenges in its future development. Finally it concludes that Chinapages' future is bright and promising with China's WTO entry just around the corner, if Chinapages takes advantages of the opportunities and faces the challenges with confidence and aggressiveness in the new era of e-commerce.

• Korean Journal of Veterinary Research
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• v.25 no.2
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• pp.183-186
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• 1985

Fecal samples from beef and dairy calves less than 12-month-old of Chonnam area were examined for coccidial oocysts. The percentages of cattle and coccidian species found were: Eimeria alabamensis. 9.4; E. auburnensis, 12.5; E. bovis, 29.9; E. brasiliensis, 1.5; E. bukidnonensis, 2.1; E. canadensis, 10.4; E. cylindrica, 7.5; E. ellipsoidalis, 11.5; E. pellita, 1.7; E. subspherica, 10.4; E. wyomingensis, 2.9; and E. zuernii, 22.5. Fifty five percent of the fecal samples from 521 calves were positive for oocysts, and clinical coccidiosis was not found in any of these calves. The number of species in positive samples ranged from 1 to 7.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.383-388
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• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.